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    DBA SOT23 Search Results

    DBA SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    DBA SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 19-1230; Rev 2a; 6/97 KIT ATION EVALU E L B AVAILA 1 GH z, Low -Pow e r, SOT 2 3 , Curre nt -Fe e dba c k Am plifie rs w it h Shut dow n The MAX4223–MAX4228 are ideal for professional video applications, with differential gain and phase errors of 0.01% and 0.02°, 0.1dB gain flatness of 300MHz, and a


    Original     		PDF MAX4223â MAX4228 300MHz, 100V/Â -60dBc 10MHz) MAX4223/MAX4224/ MAX4226/MAX4228 10LUMAXB

    ceramic capacitor footprint dimension

    Abstract: step-up led converter AP3029 CDRH5D28RNP-220NC Step-up 36V voltage to current converter 4 to 20ma circuit 4 to 20mA schematic
    Text: Demo Board Manual -DB-A White LED Step-Up Converter AP3029 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. Operation 5. PCB Layout 6. Photo View of the Demo Board 7. PCB Dimension 8. BOM 9. Test Result May. 2007 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited


    Original     		PDF AP3029 AP3029 LED16 CDRH5D28RNP-220NC 1uF/25V, ceramic capacitor footprint dimension step-up led converter CDRH5D28RNP-220NC Step-up 36V voltage to current converter 4 to 20ma circuit 4 to 20mA schematic

    302v smd component

    Abstract: 302V smd diode ss14 AP3015 SS14 schottky smd Step-up 12V to 15V SS14 DIODE schottky bcd sw ss14 schottky
    Text: Demo Board Manual - DB-A Micro Power Step-Up DC/DC Converter AP3015 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result August. 2006 Rev. 1.2 1 BCD Semiconductor Manufacturing Limited


    Original     		PDF AP3015 AP3015 100mA 125mA 302v smd component 302V smd diode ss14 SS14 schottky smd Step-up 12V to 15V SS14 DIODE schottky bcd sw ss14 schottky

    AP3009

    Abstract: step-up led converter
    Text: Demo Board Manual - DB-A White LED Step-Up Converter AP3009 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimension 7. BOM 8. Test Result September. 2006 Rev. 2.1 1 BCD Semiconductor Manufacturing Limited


    Original     		PDF AP3009 AP3009 LED16 CDRH5D28RNP-220NC 2uF/25V, step-up led converter

    Z6 DIODE

    Abstract: No abstract text available
    Text: Zener Diode ctparts.com CTZ84C Series Not shown at actual size. 2.4V ~ 39V RoHS Compliant CHARACTERISTICS Description: SOT-23 Plastic-Encapsulated Zener Diode Features: Planar Die Construction. 350mW Power Dissipation. Zener Voltages from 2.4V ~ 39V. Ideally Suited for Automated


    Original     		PDF CTZ84C OT-23 350mW Z6 DIODE

    PJDLC05C

    Abstract: marking dba ti suppressor 5v
    Text: PJDLC05C-03 VOLTAGE 5.0 Volts POWER 250 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss


    Original     		PDF PJDLC05C-03 OT-23, IEC61000-4-2 2002/95/EC PJDLC05C marking dba ti suppressor 5v

    GSD2004A

    Abstract: No abstract text available
    Text: GSD2004A Dual Common-Anode Small-Signal Switching Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View New ct u d Pro Mounting Pad Layout 0.031 (0.8) 3 .056 (1.43) .052 (1.33) 0.035 (0.9) 1 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)


    Original     		PDF GSD2004A O-236AB OT-23) OT-23 O-236AB) GSD2004A

    88199

    Abstract: GSD2004A
    Text: GSD2004A Vishay Semiconductors New Product formerly General Semiconductor Dual Common-Anode Small-Signal Switching Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 Dimensions in inches


    Original     		PDF GSD2004A O-236AB OT-23) OT-23 O-23herwise 14-May-02 88199 GSD2004A

    Untitled

    Abstract: No abstract text available
    Text: PJDLC05C-03 VOLTAGE POWER 5.0 Volts 250 Watts 0.006 0.15 MIN. ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a


    Original     		PDF PJDLC05C-03 OT-23, 2011-REV OT-23

    Untitled

    Abstract: No abstract text available
    Text: PJDLC05C-03 VOLTAGE POWER 5.0 Volts SOT-23 250 Watts Unit inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a


    Original     		PDF PJDLC05C-03 OT-23 OT-23, 2011-REV

    PJDLC05C

    Abstract: No abstract text available
    Text: PJDLC05C-03 VOLTAGE POWER 5.0 Volts SOT-23 250 Watts Unit：inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a


    Original     		PDF PJDLC05C-03 OT-23 OT-23, 2011-REV PJDLC05C

    Untitled

    Abstract: No abstract text available
    Text: PJDLC05C-03 VOLTAGE POWER 5 Volts 250 Watts SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE 0.120(3.04) 0.110(2.80) This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a


    Original     		PDF PJDLC05C-03 OT-23, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component


    Original     		PDF GSD2004A-V 2002/95/EC 2002/96/EC OT-23 O-236AB) GSD2004A-V GSD2004A-V-GS18 GSD2004A-V-GS08 D-74025 07-Apr-05

    GSD2004A

    Abstract: GSD2004A-GS08 GSD2004A-GS18
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A-GS18 GSD2004A-GS08 D-74025 08-Jul-04 GSD2004A GSD2004A-GS08

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A GSD2004A-GS18 GSD2004A-GS08 D-74025 21-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability 3 1 1 3 Mechanical Data


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A GSD2004A-GS18 GSD2004A-GS08 D-74025 18-Nov-03

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A GSD2004A-GS18 GSD2004A-GS08 D-74025 18-Nov-03

    GSD2004A-V-GS08

    Abstract: GSD2004A-V-GS18
    Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component


    Original     		PDF GSD2004A-V 2002/95/EC 2002/96/EC OT-23 O-236AB) GSD2004A-V-GS18 GSD2004A-V-GS08 18-Jul-08 GSD2004A-V-GS08

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component


    Original     		PDF GSD2004A-V 2002/95/EC 2002/96/EC OT-23 O-236AB) GSD2004A-V-GS18 GSD2004A-V-GS08 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified


    Original     		PDF GSD2004A-V AEC-Q101 2002/95/EC 2002/96/EC OT-23 GSD2004A-V GSD2004A-V-GS18 GSD2004A-V-GS08 2011/65/EU 2002/95/EC.

    GSD2004A-V-GS08

    Abstract: GSD2004A-V-GS18
    Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component


    Original     		PDF GSD2004A-V 2002/95/EC 2002/96/EC OT-23 O-236AB) GSD2004A-V-GS18 GSD2004A-V-GS08 08-Apr-05 GSD2004A-V-GS08

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified


    Original     		PDF GSD2004A-V AEC-Q101 2002/95/EC 2002/96/EC OT-23 GSD2004A-V-GS18 GSD2004A-V-GS08 25emarks 2011/65/EU

    bkd transistor

    Abstract: Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23
    Text: SPRAGUE/SEMICO ND GROUP IME D • 0513050 0QG47TQ 7 ■ T-^-öl SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C BC856A BC8S6B BC857A BC857B


    OCR Scan     		PDF 0QG47TQ BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A bkd transistor Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium frequency transistor BF840 FEATURES PINNING • Low cu rrent max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • AM m ixers • IF am plifiers in A M /FM receivers.


    OCR Scan     		PDF BF840