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Panasonic Electronic Components DB2W31800L DIODE SCHOTTKY 30V 2A MINI2-F3-B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DB2W31800L	Digi-Reel			1	1 $0.41 10 $0.41 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
	DB2W31800L	Cut Tape			1	1 $0.41 10 $0.41 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
	DB2W31800L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.11288	Buy Now
Newark	DB2W31800L	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

DB2W318 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DB2W31800L		Panasonic	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 30V 2A MINI2		Original	PDF

DB2W318 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-12743 Revision. 3 Product Standards Schottky Barrier Diode DB2W31800L DB2W31800L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Low terminal capacitance Ct  Halogen-free / RoHS compliant	Original	PDF	TT4-EA-12743 DB2W31800L UL-94
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-12743 Revision. 4 Product Standards Schottky Barrier Diode DB2W31800L DB2W31800L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Low terminal capacitance Ct  Halogen-free / RoHS compliant	Original	PDF	TT4-EA-12743 DB2W31800L UL-94
DB2W318 Abstract: mini2-f3-b Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2W318 Silicon epitaxial planar type For rectiﬁcation • Features  Package  Low forward voltage VF  Low terminal capacitance Ct  Contributes to miniaturization of sets, reduction of component count.	Original	PDF	2002/95/EC) DB2W318 DB2W318 mini2-f3-b
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
MN864779 Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.	Original	PDF	A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Untitled Abstract: No abstract text available Text: NXP low VF MEGA Schottky rectifiers in SOD123W and SOD128 FlatPower Schottky rectifiers : Small on size. Big on power. NXP’s new FlatPower packages with clip-bond technology meet the demand for thinner products with high power capabilities. Today a range of 40 medium power Schottky	Original	PDF	OD123W OD128 OD128.
smini2-f4-b Abstract: mini2-f3-b Mini2-F4-B Text: High performance SBD series with fine diffusion process Low VF Schottky barrier diode Unit ： mm 0.80 ± 0.05 1.60 ± 0.10 +0.02 0.80 ±0.10 0.58 -0.03 1 ※Junction Barrier Schottky 2 2 0.30 ±0.10 0.60 ±0.10 3.50 ± 0.10 2.60 ± 0.10 7° 5° 1.90 ±0.10	Original	PDF	DB2W318 DB2X414 DB24416 smini2-f4-b mini2-f3-b Mini2-F4-B