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    DB21412 Price and Stock

    Panasonic Electronic Components DB2141200L

    DIODE SCHOT 40V 1.5A SMINI2
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    DigiKey DB2141200L Reel 3,000
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    Avnet Abacus DB2141200L 143 Weeks 3,000
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    ROHM Semiconductor DB2141200L

    Diode Schottky 1.5A 2-Pin SC-108A T/R (Alt: DB2141200L)
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    Avnet Asia DB2141200L 24 Weeks 3,000
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    DB21412 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DB2141200L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 40V 1.5A SMINI2 Original PDF

    DB21412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB21412 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF and small reverse current IR  Forward current (Average) IF(AV) = 1.5 A rectification is possible


    Original
    PDF 2002/95/EC) DB21412

    DB2141200L

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB21412 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF and small reverse current IR  Forward current (Average) IF(AV) = 1.5 A rectification is possible


    Original
    PDF 2002/95/EC) DB21412 DB2141200L

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB21412 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF and small reverse current IR  Forward current (Average) IF(AV) = 1.5 A rectification is possible


    Original
    PDF 2002/95/EC) DB21412

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13679 Revision. 3 Product Standards Schottky Barrier Diode DB2141200L DB2141200L Silicon epitaxial planar type Unit: mm 1.25 0.6 For rectification 0.12 2 • Features 1.9 2.5  Low forward voltage and small reverse leakage current  Forward current Average IF(AV) = 1.5 A rectification is possible


    Original
    PDF TT4-EA-13679 DB2141200L UL-94

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


    Original
    PDF A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY

    smini2-f4-b

    Abstract: mini2-f3-b Mini2-F4-B
    Text: High performance SBD series with fine diffusion process Low VF Schottky barrier diode Unit : mm 0.80 ± 0.05 1.60 ± 0.10 +0.02 0.80 ±0.10 0.58 -0.03 1 ※Junction Barrier Schottky 2 2 0.30 ±0.10 0.60 ±0.10 3.50 ± 0.10 2.60 ± 0.10 7° 5° 1.90 ±0.10


    Original
    PDF DB2W318 DB2X414 DB24416 smini2-f4-b mini2-f3-b Mini2-F4-B