PCN0903
Abstract: Hitachi Datecode SUMITOMO G700 Nitto GE100LFCS GE100LFCS Hitachi FH920 Ablestik 2025D ablestik 2288a EPC16UI88AA sumitomo g700 type
Text: Revision: 1.0.1 PROCESS CHANGE NOTIFICATION PCN0903 ALTERNATIVE ASSEMBLY SITE FOR THE EPC CONFIGURATION FAMILY Change Description Altera is introducing Amkor, Philippines ATP and Amkor, Korea (ATK) as additional assembly sources for the EPC configuration devices. The EPC devices are currently assembled out of
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PCN0903
PCN0903
Hitachi Datecode
SUMITOMO G700
Nitto GE100LFCS
GE100LFCS
Hitachi FH920
Ablestik 2025D
ablestik 2288a
EPC16UI88AA
sumitomo g700 type
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LTC-561JG-J
Abstract: LTC-561JG Liteon 401 2600C T0505
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only LED DISPLAY LTC-561JG-J DATA SHEET Rev Description By 01 ORIGINAL Refer to contour drawing Revision (- PRAPHAN (Above data for PD and Customer tracking only) - SPEC. NO.: DATE NPPR Received and Upload on OPNC
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LTC-561JG-J
DS30-2008-0175
BNS-OD-C131/A4
LTC-51
P6/03/27EE
21TPND43
BFR19
T0505
LTC-561JG-J
LTC-561JG
Liteon 401
2600C
T0505
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hx8340
Abstract: DEM240320A CIE1931 vc001 30 pin LCD connector 30MIN HX8345-A
Text: DEM 240320A TMH-PW-N Product Specification DISPLAY Elektronik GmbH CONTENTS 1,8” TFT MODULE DEM 128160B TMH-PW-N Product Specification Version: 1.0 31.10.2007 VERSION: 1.0 PAGE: 1 DEM 240320A TMH-PW-N Product Specification REVISION HISTORY: Revision Date
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40320A
128160B
10DISPLAY
HX8345
HX8340
DEM240320A
CIE1931
vc001
30 pin LCD connector
30MIN
HX8345-A
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SLG55221
Abstract: fet n-channel pin configuration FET marking code
Text: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions
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SLG55221
SLG55220
SLG55221
fet n-channel pin configuration
FET marking code
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SLG55221
Abstract: FET MARKING 600 V logic level fet fet MARKING g2 fet n-channel pin configuration
Text: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions
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SLG55221
SLG55220
SLG55221
FET MARKING
600 V logic level fet
fet MARKING g2
fet n-channel pin configuration
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application • Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFS7762PbF
IRFSL7762PbF
JESD47F)
O-262
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IRFB7730PBF
Abstract: IRFB7730 irfsl7730 IRFS7730
Text: StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFB7730PbF
IRFS7730PbF
IRFSL7730PbF
JESD47F)
O-220
O-262
IRFB7730PBF
IRFB7730
irfsl7730
IRFS7730
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BUZ11
Abstract: buz11 equivalent BUZ11 in electronic pulse schematic buz11 motor control
Text: BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET TYPE BUZ11 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ11
O-220
175oC
BUZ11
buz11 equivalent
BUZ11 in electronic pulse schematic
buz11 motor control
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BUZ71A
Abstract: transistor buz71a STripFET
Text: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A -TO-220 STripFET POWER MOSFET T YPE BUZ71A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71A
-TO-220
175oC
O-220
BUZ71A
transistor buz71a
STripFET
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BUZ10
Abstract: No abstract text available
Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ10
O-220
175oC
BUZ10
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BUZ71
Abstract: BUZ71 dc to ac
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71
O-220
175oC
BUZ71
BUZ71 dc to ac
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BUZ11A
Abstract: buz11a circuit datecode G1
Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ11A
O-220
175oC
BUZ11A
buz11a circuit
datecode G1
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BUZ71
Abstract: stmicroelectronics datecode BUZ71 ST
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 14A -TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.1 Ω 14 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71
-TO-220
175oC
O-220
BUZ71
stmicroelectronics datecode
BUZ71 ST
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Untitled
Abstract: No abstract text available
Text: B H W IRING DIAGRAM 4X-4X Plug 1 Pin Number G1-G9 G1-G9 S1 S16 S2 S15 S3 S14 S4 S13 S5 S12 S6 S11 S7 S8 S9 B Plug 2 Pin Number 30 Lable S10 S9 S8 S10 S7 S11 S6 S12 S5 S13 S4 S14 S3 S15 S2 S16 S1 Shell Shell A ll B e s t E le c tro n ic s C o . Ltd. P /N : R -C S -F 4 X 4 F 4 X 4 -R 1 -1 0 0 0
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R-CS-F4X4F4X4-R1-1000
4X28AWG
1000mm
R-ZC-01504X-L1
R-FI-01504X-T1
R-CS-F4X4F4X4-R1-1000
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DEC2007
Abstract: TI ASSEMBLY CODE
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED. REVISIO N S H C O R P O R A T IO N . A S E CT IO N D IS T D E S C R IP T IO N G1 -49,9-
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-24x2
DEC2007
ECR-10-018652
25FEB98
23NOV99
31MAR2000
TI ASSEMBLY CODE
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Untitled
Abstract: No abstract text available
Text: qggngng SR302 - SR320 3.0 AMPS. Schottky Barrier Rectifiers pi RoHS \_y COMPLIANCE DO-201 AD - -m -Features_ > 4" -i-v> <i- •i1 Low power loss, high efficiency. High current capability, Low VF.
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G10Version:
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR S1AL -S 1 M L RoHS 1.0 AMP. Surface Mount Rectifiers COMPLIANCE Sub SMA - CaUioOaBard i\- Features •4* ❖ -v* ^ •v" For surface m ounted application Glass passivated ju nctio n chip. Low -Profile Package Ideal fo r autom ated placem ent
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AEC-Q101
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802G
Abstract: SF801G SF808G
Text: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SF801G - SF808G 8.0 AMPS. Glass Passivated Super Fast Rectifiers TO-22QAB .186 4.76 .172(442) .156(4.0) ' .138(3.54) v Features •fr •> -v- A UL Recognized File # E-326243 High efficiency, low VF High current capability
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SF801G
SF808G
O-22QAB
E-326243
T0-220AB
50Vdc
5/10ns/cm
802G
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GPA1601
Abstract: GPA1607 QPCN9001 2609B TAIWAN SEMICONDUCTOR
Text: E TAIWAN SEMICONDUCTOR GPA1601 -GPA1607 RoHS 16.0 AMPs. G lass Passivated Rectifiers TO-22QAC CO M PLIAN C E .412Î1Û.S Mt Features <• 1«{? &?■> Glass Passivated chip junction o High efficiency, Low VF <■ High Current capacity o High reliability <■
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GPA1601
-GPA1607
O-220AC
TG-220AC
MIL-STD-202,
GPA1607
QPCN9001.
S58280A)
GPA1607
QPCN9001
2609B
TAIWAN SEMICONDUCTOR
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SFAF801G
Abstract: SFAF808G
Text: is SFAF801G - SFAF808G TAIWAN SEMICONDUCTOR Isolated 8.0 AMPS. Glass Passivated Super Fast Rectifiers ITO-22QAC .374 9.6 ,134(3,4)DIA 113(3.0)DIA. .121(3.1) .098(2.5) P-'T* Features ♦ <• -Y- -4<■ -v> -0-0- - % UL R ecognized File # E -326243 High efficiency, low VF
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SFAF801G
SFAF808G
ITO-22QAC
E-326243
ITO-220AC
5110ns/
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Untitled
Abstract: No abstract text available
Text: BUZ71 N - CHANNEL 50V - 0.085ft - 14A -TO-220 STripFET POWER MOSFET TYPE BUZ71 V dss 50 V R d Id S o ii < 0.1 Q. 14 A . • TYPICAL RDS(on) = 0.085 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
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BUZ71
085ft
-TO-220
T0-220
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Untitled
Abstract: No abstract text available
Text: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
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BUZ71A
-TO-220
BUZ71
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buz10
Abstract: No abstract text available
Text: BUZ10 N - CHANNEL 50V - 0.06ft - 23A -TO-220 STripFET POWER MOSFET TYP E BUZ10 • . . . . V R d S o ii Id < 0.07 Q. 23 A dss 50 V TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE
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BUZ10
-TO-220
O-220
buz10
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D0214AC SMA
Abstract: D0214AC J-STD-0200 FY DO-214AC Sma marking CODE 63 D0214 datecode G1 marking g10 marking SK ml marking
Text: SI <s> SK32A - SK315A TAIWAN SEMICONDUCTOR 3.0 A M P S . S u rfa c e M o u n t S c h o ttk y B a rrie r R e c tifie rs RoHS COMPLIANCE Features <>• ♦ S M A /D O -214A C Low pow er loss, high efficiency. M etal to silicon rectifier, m ajority carrier conduction
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SK32A
SK315A
SMA/DO-214AC
J-STD-0200
SK315A)
D0214AC SMA
D0214AC
J-STD-0200
FY DO-214AC
Sma marking CODE 63
D0214
datecode G1
marking g10
marking SK
ml marking
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