BDY28B
Abstract: BDY79 BDY54 IC-410
Text: Search Results Part number search for devices beginning "BDY25" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BDY25 NPN TO3 140V 6A 75 180 4/2 10MHz 85W
|
Original
|
PDF
|
BDY25"
BDY25
BDY25A
BDY25B
BDY25C
10MHz
BDY26"
BDY28B
BDY79
BDY54
IC-410
|
mj150* darlington
Abstract: MJ15003 MJ15004 mj15004 NPN 250W Darlington NPN 250W mj15003 equivalent 250w npn MJ15003
Text: MJ15003 - NPN MJ15004 - PNP MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . FEATURES 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )
|
Original
|
PDF
|
MJ15003
MJ15004
500KHz
mj150* darlington
MJ15003 MJ15004
NPN 250W
Darlington NPN 250W
mj15003 equivalent
250w npn
|
mj15004
Abstract: No abstract text available
Text: MJ15003 - NPN MJ15004 - PNP SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . FEATURES 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )
|
Original
|
PDF
|
MJ15003
MJ15004
|
Untitled
Abstract: No abstract text available
Text: BDY25C MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
|
Original
|
PDF
|
BDY25C
O204AA)
3001s,
|
BDY25A
Abstract: 7595
Text: BDY25A MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
|
Original
|
PDF
|
BDY25A
O204AA)
BDY25A
7595
|
Untitled
Abstract: No abstract text available
Text: BDY25A MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
|
Original
|
PDF
|
BDY25A
O204AA)
3001s,
|
BDY25C
Abstract: 7594
Text: BDY25C MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
|
Original
|
PDF
|
BDY25C
O204AA)
BDY25C
7594
|
Untitled
Abstract: No abstract text available
Text: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)
|
Original
|
PDF
|
2N2896
|
BDY25B
Abstract: No abstract text available
Text: BDY25B MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
|
Original
|
PDF
|
BDY25B
O204AA)
BDY25B
|
semelab 2N6287
Abstract: 2N6300J 2n6278 to63
Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz
|
Original
|
PDF
|
2N6298"
2N6298
2N6298-JQR-B
2N6276"
2N6276
2N6276A
2N6276A-JQR-B
2N6276-JQR-B
2N6374"
2N6374
semelab 2N6287
2N6300J
2n6278 to63
|
Untitled
Abstract: No abstract text available
Text: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)
|
Original
|
PDF
|
2N2896
|
transistor 559
Abstract: No abstract text available
Text: 2N2896CSM4 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)
|
Original
|
PDF
|
2N2896CSM4
transistor 559
|
Untitled
Abstract: No abstract text available
Text: ^eml-donduckoi iPioaucti, Dna. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MECHANICAL DATA Dimensions in mm (inches) 2N2896 (0.230), T51 (0.209)' NPN SILICON TRANSISTOR 4.95 (0.195) 4.52(0.178)
|
Original
|
PDF
|
2N2896
10vlTA
150mA,
|
2N3700
Abstract: LE17 Transistor 2N3700
Text: SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
|
Original
|
PDF
|
2N3700
O-206AA)
2N3700
LE17
Transistor 2N3700
|
|
|
Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
|
Original
|
PDF
|
2N2896X
500mW
O-206AA)
|
Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
|
Original
|
PDF
|
2N2896X
500mW
86mW/Â
O-206AA)
|
2N3700CSM
Abstract: LE17
Text: SILICON NPN TRANSISTOR 2N3700CSM • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
|
Original
|
PDF
|
2N3700CSM
2N3700CSM
LE17
|
Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N3700CSM • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
|
Original
|
PDF
|
2N3700CSM
|
HIGH POWER NPN SILICON TRANSISTOR
Abstract: STP5508 LE17
Text: HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage
|
Original
|
PDF
|
STP5508
O-204AE)
HIGH POWER NPN SILICON TRANSISTOR
STP5508
LE17
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.
|
Original
|
PDF
|
2N3019DCSM
500mW
500mW
86mW/Â
MO-041BB)
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
|
Original
|
PDF
|
2N3019
800mW
57mW/Â
O-205AD)
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.
|
Original
|
PDF
|
2N3019DCSM
500mW
500mW
86mW/Â
MO-041BB)
|
Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
|
Original
|
PDF
|
2N3019
800mW
57mW/Â
O-205AD)
|
TRANSISTOR 3064
Abstract: TRANSISTOR 2N3019 2N3019
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
|
Original
|
PDF
|
2N3019
800mW
O-205AD)
TRANSISTOR 3064
TRANSISTOR 2N3019
2N3019
|
