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    DATASHEET MOSFET IGBT LOW VOLTAGE Search Results

    DATASHEET MOSFET IGBT LOW VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DATASHEET MOSFET IGBT LOW VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD6563FV-LB

    Abstract: No abstract text available
    Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB ●General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side


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    PDF BD6563FV-LB BD6563FV-LB

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    Abstract: No abstract text available
    Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6563FV-LB General Description BD6563FV-LB is 3-ch gate driver to drive gate of IGBT/MOSFET from 5V input signals. Output signals consist of each high side and low side


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    PDF BD6563FV-LB BD6563FV-LB

    2SC0435T2A0-17

    Abstract: 2sc0435 2SC0435T2 2SC0435T 2SC0435T2Ax-17 2sc0435t2a0 igbt, thermal design manual
    Text: 2SC0435T2Ax-17 2SC0435T2Ax-17 Preliminary Datasheet Dual-Channel Low-Cost SCALE-2 IGBT and MOSFET Driver Core Abstract The low-cost SCALE-2 dual-driver core 2SC0435T2Ax-17 combines unrivalled compactness with broad applicability. The driver is designed for universal applications requiring high reliability. The 2SC0435T2Ax-17


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    PDF 2SC0435T2Ax-17 2SC0435T2Ax-17 CH-2504 641-2SC0435T2A0-17 2SC0435T2A0-17 2SC0435T2A0-17 2sc0435 2SC0435T2 2SC0435T 2sc0435t2a0 igbt, thermal design manual

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    Abstract: No abstract text available
    Text: Eice DR IV ER Co m pac t High voltage gate driver IC 2E DL fa mi ly 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ EiceDRIVER TM Compact Final dat a sheet <Revision 2.0>, 17.07.2014 Final Indust rial Po wer & Con trol


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    PDF 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ PG-DSO-14

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    Abstract: No abstract text available
    Text: Eice DR IV ER Co m pac t High voltage gate driver IC 2E DL fa mi ly 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ EiceDRIVER TM Compact Preli mina r y datas he et <Revision 1.0>, 18.06.2014 Preliminary Indust rial Po wer & Con trol


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    PDF 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ PG-DSO-14

    DSO14

    Abstract: DSO-14
    Text: Eice DR IV ER Co m pac t High voltage gate driver IC 2E DL fa mi ly 600 V half bridge gate drive IC 2EDL23I06PJ 2EDL23N06PJ EiceDRIVER TM Compact Targ et d at asheet <Revision 0.86>, 15.05.2014 Target Indust rial Po wer & Con trol Edition 15.05.2014 Published by


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    PDF 2EDL23I06PJ 2EDL23N06PJ PG-DSO-14 DSO14 DSO-14

    2EDL05N06PF

    Abstract: 2EDL23N06 2EDL23I06PJ 2EDL23N06PJ 2EDL05I06BF 2EDL05I06PF igbt types 2edl05i06p 2EDL05I06PJ 2edl23i06
    Text: Eice DR IV ER t m High voltage gate driver IC 2E DL fa mi ly 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ 2EDL23I06PJ 2EDL23N06PJ EiceDRIVER(TM) Targ et d at asheet <Revision 0.85>, 16.04.2013 Target Indust rial Po wer & Con trol


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    PDF 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ 2EDL23I06PJ 2EDL23N06PJ PG-DSO-14 2EDL23N06 2EDL23N06PJ igbt types 2edl05i06p 2edl23i06

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


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    Abstract: No abstract text available
    Text: DR3 Final Version Automotive Grade AUIR08152S BUFFER GATE DRIVER INTEGRATED CIRCUIT Features • • • • • • • • • Product Summary High peak output current Negative turn-off bias Separate Ron / Roff resistors Low supply current Under-voltage lockout


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    PDF AUIR08152S AUIR08152

    Wacker Silicones p12

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
    Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available


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    Abstract: No abstract text available
    Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency


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    PDF 10-FZ06NBA084FP-M306L48 00V/84A 2x84A FZ06NBA084FP

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    Abstract: No abstract text available
    Text: 10-FY06RIA080MF-M537D68 preliminary datasheet flowSOL 1 RI 650V/80mΩ Features flow1 12mm housing ● Low inductive 12mm flow1 package ● Rectifier Bridge: ○ Ultra fast rectifier bridge ● Inverter: ○ Pseudo H-bridge topology ○ Trench IGBT + fast FWD


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    PDF 10-FY06RIA080MF-M537D68 50V/80mâ 50V/80mOhm

    Untitled

    Abstract: No abstract text available
    Text: Automotive Grade AUIR08152S BUFFER GATE DRIVER INTEGRATED CIRCUIT Features •         Product Summary High peak output current Negative turn-off bias Separate Ron / Roff resistors Low supply current Under-voltage lockout Full time ON capability


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    PDF AUIR08152S AUIR08152

    FOD8384

    Abstract: No abstract text available
    Text: FOD8384 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin Features Description • Reliable and High-Voltage Insulation with Greater The FOD8384 is a 2.5 A output current gate drive optocoupler capable of driving medium-power IGBT/


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    PDF FOD8384 FOD8384 com/dwg/M0/M05B dwg/PKG-M05AB

    Untitled

    Abstract: No abstract text available
    Text: FZ06NRA045FH01 preliminary datasheet flowNPC 0 600V/30A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● clip-in pcb mounting ● low inductance layout Target Applications Schematic ● solar inverter ● UPS


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    PDF FZ06NRA045FH01 00V/30A

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    Abstract: No abstract text available
    Text: FZ06BIA045FH01 preliminary datasheet flowSOL 0 BI 600V/35A Features flow0 housing ● High efficiency ● Ultra fast switching frequency ● Low inductive design ● SiC in boost Target Applications Schematic ● Transformerless solar inverters Types ● FZ06BIA045FH01


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    PDF FZ06BIA045FH01 00V/35A

    10-FZ06BIA045FH-P897E

    Abstract: No abstract text available
    Text: FZ06BIA045FH preliminary datasheet flowSOL 0 BI 600V/35A Features flow0 housing ● High efficiency ● Ultra fast switching frequency ● Low inductive design ● SiC in boost and H bridge Target Applications Schematic ● Transformerless solar inverters


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    PDF FZ06BIA045FH 00V/35A 10-FZ06BIA045FH-P897E

    10-FZ06NPA045FP01-P967F10

    Abstract: No abstract text available
    Text: FZ06NPA045FP01 preliminary datasheet flowNPC 0 600V/50A & 45A PS* Features flow0 12mm housing ● *PS: 45A parallel switch 40A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● low inductance layout Target Applications Schematic


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    PDF FZ06NPA045FP01 00V/50A 10-FZ06NPA045FP01-P967F10

    Untitled

    Abstract: No abstract text available
    Text: FZ06NRA045FH preliminary datasheet flowNPC 0 600V/30A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● SiC buck diode ● clip-in pcb mounting ● low inductance layout Target Applications Schematic ● solar inverter


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    PDF FZ06NRA045FH 00V/30A

    Untitled

    Abstract: No abstract text available
    Text: FZ06NPA070FP preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● SiC buck diode ● low inductance layout Target Applications


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    PDF FZ06NPA070FP 00V/75A

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    Abstract: No abstract text available
    Text: FZ06RIA045FH01 preliminary datasheet flowSOL RI 600V/30A & 45mΩ Features flow0 housing ● High efficiency ● Ultra fast rectification and switching frequency ● Low inductive design ● Tandem to FZ06BIA083FI Target Applications Schematic ● Transformer-based solar inverters


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    PDF FZ06RIA045FH01 00V/30A FZ06BIA083FI

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NRA099FS-P963F68 preliminary datasheet flowNPC 0 600V/18A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● C6 CoolMOS and SiC buck diode ● clip-in pcb mounting ● low inductance layout ● LVRT capability


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    PDF 10-FZ06NRA099FS-P963F68 00V/18A

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425

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    Abstract: No abstract text available
    Text: FZ06BIA045FH02 preliminary datasheet flowSOL BI 600V/35A Features flow0 housing ● High efficiency ● Ultra fast switching frequency ● Low inductive design ● Open emitter ● SiC in boost and H bridge Target Applications Schematic ● Transformerless solar inverters


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    PDF FZ06BIA045FH02 00V/35A