darlington NPN 600V 12a transistor
Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
Text: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.
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MJ10023
MJ10023
darlington NPN 600V 12a transistor
darlington NPN 600V 20a transistor
NPN 600V transistor
NPN 600V transistor darlington
application MJ10023
NPN Transistor 600V
NPN POWER DARLINGTON
darlington NPN 600V
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darlington NPN 600V 8a transistor
Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Text: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
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NTE256
NTE256
darlington NPN 600V 8a transistor
npn darlington 400v 10a
npn darlington 6A 400V
TO218 20A Darlington
22a ic
NPN Transistor 600V
npn darlington 400v 1.*a
darlington NPN 600V
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NPN Transistor 50A 400V
Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
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NTE99
NTE99
NPN Transistor 50A 400V
NPN 400V 40A
npn darlington 400v 15a
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Untitled
Abstract: No abstract text available
Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit
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FJP9100
O-220
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FJP9100
Abstract: NPN Transistor 600V TO-220
Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit
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FJP9100
O-220
FJP9100
NPN Transistor 600V TO-220
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J9100
Abstract: No abstract text available
Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit
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FJP9100
O-220
FJP9100
O-220-3
FJP9100TU
J9100
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NPN Transistor 600V 2A
Abstract: 250V transistor npn 2a BU810 NPN 600V transistor darlington 400V voltage regulator darlington power transistor high voltage high frequency switching npn transistor 400V NPN Transistor 600V NPN Transistor 600V 0,2A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high frequency and efficency converters,
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TFD120
Abstract: TFD-120 TFD200 850g powerline npn darlington 40A
Text: DTD/TFD120/200 DTD/TFD120/200 Superswitch Powerline NPN Darlington Transistor Replaces November 1999 version, DS5265-2.0 DS5265-3.0 September 2000 APPLICATIONS • High frequency inverters ■ Power supplies ■ Aircraft power supplies ■ Motor controls KEY PARAMETERS
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DTD/TFD120/200
DS5265-2
DS5265-3
120/200A
200/300A
TFD120
TFD-120
TFD200
850g
powerline npn
darlington 40A
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NTE2540
Abstract: 600V NPN 2A
Text: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2540
NTE2540
600V NPN 2A
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2SD1166
Abstract: darlington NPN 600V 8a
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1166 HIGH POWER SWITCHING APPLICATION. AC & MOTOR CONTROL APPLICATION. INVERTER APPLICATION. FEATURES: . High Voltage : VcE SUS >900V . Triple Diffused Design . Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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2SD1166
S300//S,
1000kg
AR51A
2SD1166
darlington NPN 600V 8a
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ST100Q22
Abstract: ST100Q
Text: ST100Q22 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : VCEX SUS >1200V . Triple Diffused Design . Darlington Design
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ST100Q22
2-60B1A
500kg
ST100Q22
ST100Q
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Untitled
Abstract: No abstract text available
Text: ÌMf| ACHTES0 0□ Q7fi4b 0 | TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS.
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DT-33-35
2SD1034A
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MG20G6EL2
Abstract: No abstract text available
Text: MG20G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.
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MG20G6EL2
MG20G6EL2
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MG50G6EL1
Abstract: darlington NPN 600V 50a transistor NPN transistor Ic 50A mg50g6el
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G6EL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.
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MG50G6EL1
00A//is
MG50G6EL1
darlington NPN 600V 50a transistor
NPN transistor Ic 50A
mg50g6el
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MG15G6EL1
Abstract: No abstract text available
Text: MG15G6EL1 QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in 1 Package. . With Built-in Free Wheeling Diodes.
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MG15G6EL1
TjSa25r
MG15G6EL1
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darlington NPN 600V 20a transistor
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1} MP6005 ° HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS ° MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation. (SIP 14 Pin
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MP6005
-100A/us
darlington NPN 600V 20a transistor
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2SD1409
Abstract: 2sd1409 toshiba
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1409 INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. lQkSUAX. FEATURES: . High DC Current Gain : hFE=600(Min.) (VCE=2V, Ic = 2A) . Monolithic Construction with Built-In Base-Emitter
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2SD1409
2SD1409
2sd1409 toshiba
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MG50G1BL2
Abstract: mg50g1b mg50g1bl MG50G1
Text: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,
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MG50G1BL2
082L6
MG50G1BL2
mg50g1b
mg50g1bl
MG50G1
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TRANSISTOR ARRAY
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP6003 APPLICATIONS. O HIGH POWER SWITCHING INDUSTRIAL APPLICATIONS Unit in mm o MOTOR CONTROL APPLICATIONS. 58±l • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation.
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MP6003
20/ia
-100A/
TRANSISTOR ARRAY
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2SD798
Abstract: toshiba l500
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD798 INDUSTRIAL APPLICATIONS. Unit in mm IGNITER APPLICATIONS. 10.3MAX. HIGH VOLTAGE SWITCHING APPLICATIONS. £Í3.6±Q.2 - FEATURES: • High DC Current Gain : h FE=1500 (Min.) (Vc e =2V, I c =2A)
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2SD798
100X2
2SD798
toshiba l500
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MG75G6
Abstract: mg75g6el1
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G6EL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain
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MG75G6EL1
MG75G6
mg75g6el1
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lf7a
Abstract: No abstract text available
Text: MP6004 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 O HIGH POWER SWITCHING APPLICATIONS, INDUSTRIAL APPLICATIONS o MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation. : P t = 1 20W
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MP6004
180mA
-100A/us
lf7a
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2SD1409A equivalent
Abstract: 2SD1409A
Text: TO SHIBA IGNITER APPLICATIONS. 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. • • High DC Current Gain : hpE = 600 (Min.) (V0 e = 2V, Ic = 2A) Monolithic Construction with Built-In Base-Emitter Shunt
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2SD1409A
2SD1409A equivalent
2SD1409A
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MG75H6EL1
Abstract: No abstract text available
Text: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain
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MG75H6EL1
MG75H6EL1
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