Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation
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FMMT634
900mA
625mW
FMMT734
AEC-Q101
J-STD-020
DS33115
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PDF
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current
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FMMT634
900mA
625mW
FMMT734
AEC-Q101
DS33115
FMMT634Q
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PDF
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ja smd
Abstract: CZT127 KZT127
Text: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2
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KZT127
CZT127)
OT-223
-30mA
-20mA
ja smd
CZT127
KZT127
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IB 100MA NPN
Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃
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HBDW94C
O-220
-100V
-100V,
-20mA
-100mA
IB 100MA NPN
HBDW93C
HBDW94C
VCE 100V transistor
power darlington transistor 10A
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PDF
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DARLINGTON 3A 100V npn
Abstract: hfe 2500 NTE264
Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
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NTE263
NTE264
NTE263)
NTE264)
DARLINGTON 3A 100V npn
hfe 2500
NTE264
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NTE270
Abstract: No abstract text available
Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
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NTE270
NTE271
NTE270
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PDF
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NTE247
Abstract: nte248
Text: NTE247 NPN & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
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NTE247
NTE248
100mA
NTE247
nte248
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PDF
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HP147T
Abstract: No abstract text available
Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147T █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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HP147T
O-220
-100V
-100V,
-40mA
-10mA
-20mA
HP147T
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PDF
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NTE262
Abstract: NTE261 DARLINGTON 3A 100V npn
Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
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NTE261
NTE262
100mA
NTE262
NTE261
DARLINGTON 3A 100V npn
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PDF
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HP147TS
Abstract: No abstract text available
Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147TS █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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HP147TS
O-220
-100V
-100V,
-40mA
-10mA
-20mA
HP147TS
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PDF
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HP147TSW
Abstract: No abstract text available
Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP147TSW █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-263 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃
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HP147TSW
O-263
-100V
-10mA
-40mA
-100V,
-20mA
HP147TSW
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PDF
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TIP127 Application Note
Abstract: TRANSISTOR tip122 high gain low voltage PNP transistor darlington power transistor TIP122 TIP127 power transistor pnp darlington
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A
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-100V
TIP122
-20mA
-100V,
TIP127
TIP127 Application Note
TRANSISTOR tip122
high gain low voltage PNP transistor
darlington power transistor
TIP122
TIP127
power transistor pnp darlington
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Untitled
Abstract: No abstract text available
Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit
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TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
TIP145T/146T/147T
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PDF
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147T
Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit
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TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
TIP145T/146T/147T
147T
TIP147T
"Darlington Transistor"
TIP146T
darlington power transistor 10a
pnp darlington to-220 10a
TIP145T
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CJF6388
Abstract: CJF6668
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications
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CJF6668
O-220FP
CJF6388
C-120
CJF6668Rev
CJF6388
CJF6668
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CJF6388
Abstract: CJF6668
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications
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ISO/TS16949
CJF6668
O-220FP
CJF6388
C-120
CJF6668Rev
CJF6388
CJF6668
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PDF
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Untitled
Abstract: No abstract text available
Text: roaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TIP147T DESCRIPTION • High DC Current Gain: h FE = 1000(Min)@ IC=-5A • Collector-Emitter Sustaining Voltage-
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TIP147T
-100V
TIP142T
O-220C
-40mA
-100V,
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120v 10a transistor
Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A
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-120V
2SD1126
-10mA
-120V,
-100V,
120v 10a transistor
DARLINGTON -5A 100v pnp
2SB955
2SD1126
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PDF
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TIP145
Abstract: Tip147 PNP Darlington 100V 10A TIP147 TIP146 tip147 data sheet
Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and
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TIP145/146/147
TIP140/141/142
TIP145
TIP146
TIP147
CycleE20%
TIP145
Tip147 PNP Darlington 100V 10A
TIP147
TIP146
tip147 data sheet
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PDF
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Untitled
Abstract: No abstract text available
Text: <-$£.tni-ConaiLekoi Lpioaueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP147 Silicon PNP Darlington Power Transistor DESCRIPTION 1 • High DC Current Gain: h FE = 1000(Min)@lc=-5A
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TIP147
-100V
-40mA
-100V,
--30V,
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TIP145F
Abstract: TIP146F TIP147F 147F
Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP145F
TIP146F
TIP147F
147F
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PDF
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ic 3A hfe 500
Abstract: IC 3A 2SB601
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A
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-100V
-100V,
ic 3A hfe 500
IC 3A
2SB601
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PDF
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ULN2003NA
Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module
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OCR Scan
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TD62M
TD62C
TD/TB62
N29B3a
54S63PA
54597p
54598PÜ
2786A
UDN2580a
ULN2003NA
transistor af 178
ms4581p
8ch pnp DARLINGTON TRANSISTOR ARRAY
DARLINGTON 3A 100V npn array
pnp darlington array ULN
ULN2004NA
54566P
pnp transistor array uln
TD62981P
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage
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OCR Scan
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KSB601
KSD560
350uS,
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PDF
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