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    DAM K TRANSISTOR Search Results

    DAM K TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DAM K TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3119

    Abstract: No abstract text available
    Text: 2 N 3 119 sem iconductor Corp. Central Sem iconductor Corp. NPN SILICON TRANSISTOR ♦I Central Semiconductor Corp. JEDEC TO-39 CASE 1 4 5 A dam s Avenue Hauppauge, N ew York 11 7 8 8 J t b L K I H! I UN The CENTRAL SEMICONDUCTOR 2 N 3 119 type is a silicon NPN transistor manufactured by the


    OCR Scan     		PDF 2N3119 100mA, 100mA 250mA 50MHz

    D4027BC

    Abstract: No abstract text available
    Text: O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description All inputs are protected a gainst dam age due to static dis­ charge by diode clam ps to V DD and V s s- The C D4027BC dual J-K flip-flops are m onolithic com ple­ m entary MOS CM OS integrated circuits constructed with


    OCR Scan     		PDF CD4027BC CD4027BC D4027BC

    4027bc

    Abstract: D4027BC
    Text: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ General Description All inputs are protected against dam age due to static dis­ charge by diode clam ps to V DD and V s s- The C D 4027BC dual J-K flip-flops are m onolithic com ple­ m entary M OS CM OS integrated circuits constructed with


    OCR Scan     		PDF CD4027BC CD4027BC 4027BC D4027BC

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


    OCR Scan     		PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    IN 508 DIODE

    Abstract: sd5072 SD-50 Diode diode WO KSD5071
    Text: TRANSISTORS FUNCTION GUIDE 2.4. Horizontal Defelection Output Transistors 2.4.1. T O -3PF Type Transistors V CE sat (V) h FE V CBO (V) V CEO lc Device (V) (A) (NPN) 150 800 2.5 K SD 507 0 5 0.5 3.5 KSD5071 5 0.5 Sw itching Time «ON MAX tsTG MAX tf MAX < "S )


    OCR Scan     		PDF KSD5071 KSD5061 IN 508 DIODE sd5072 SD-50 Diode diode WO

    Untitled

    Abstract: No abstract text available
    Text: Transistors Operation notes Operation notes •S e le c tin g semiconductor devices ever, taking into consideration device deviations, it is The reliability of semiconductor devices is determined essential that the rated voltage not be exceeded. primarily by conditions of u se. W hen using sem icon­


    OCR Scan     		PDF -126FP -220FP O-22QFN

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP4N60E, PHB4N60E SYMBOL QUICK REFERENCE DATA d R epetitive A valanche Rated Fast sw itching S table off-state characteristics High therm al cycling perform ance


    OCR Scan     		PDF PHP4N60E, PHB4N60E

    37n06

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T re n c h M O S transistor L o g i c level FET FEATURES • • • • • • PHP37N06LT, P H B 3 7N 06 LT SYMBOL ’Trench’ technology Very low on-state resistance Fast sw itching


    OCR Scan     		PDF PHP37N06LT, T0220AB) 37n06

    TRANSISTOR D 1765

    Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
    Text: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.


    OCR Scan     		PDF 2SB1580 12SB1316 2SB1567 2SB1287 2SD2195 2SD1980 2SD1867 2SD2398 2SD1765 1380/2SD TRANSISTOR D 1765 TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 DIODE B1316 transistor 1765

    BC847

    Abstract: LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d


    OCR Scan     		PDF RF6522â MRF6522-70 MRF6522-70R3 MRF6522â BC847 LP2951 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5342T/D SEMICONDUCTOR TECHNICAL DATA The RF Line M HW 5342T 4 5 0 M H z CATV A m p lifie r Designed specifically for 450 MHz CATV applications. Features ion-im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system.


    OCR Scan     		PDF MHW5342T/D 5342T 60-CHANNEL 714AA-01,

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope


    OCR Scan     		PDF BUK7624-55

    K9524

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope using ’t r e n c h ’


    OCR Scan     		PDF K9524-55 K9524

    MFE824

    Abstract: Field-Effect Transistors 10mmho
    Text: MFE824 silicon SILICON N-CHANNEL N-CHANNEL MOS FIELD-EFFECT TRANSISTORS MOS FIELD-EFFECT TRANSISTORS Depletion-Enhancem ent Mode. (Type B) M O S Field-E ffect Tran­ sistors designed fo r use in smoke detector circuits. • Low Gate Reverse Current — *GSS " 1-0 pA dc (M ax) @ V q s = 10 Vdc


    OCR Scan     		PDF MFE824 MFE824 Field-Effect Transistors 10mmho

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope


    OCR Scan     		PDF BUK7620-55

    psp 1004

    Abstract: No abstract text available
    Text: HIP0061 HARRIS S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor C o m m o n So urce ESD Protected Po wer M O S F E T Array April 1997 Features Description • T h r e e 3>5A P o w e r M O S N - C h a n n e l T r a n s i s t o r s The HIP0061 is a power MOSFET array that consists of


    OCR Scan     		PDF HIP0061 HIP0061 1-800-4-H psp 1004

    Untitled

    Abstract: No abstract text available
    Text: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­


    OCR Scan     		PDF HIP0061 HIP0061 100mJ 5M-1982.

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope suitable tor surtace


    OCR Scan     		PDF BUK9608-55 55elieved

    N50E

    Abstract: PHP33N10E
    Text: Philips S em iconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode field-effect pow er tra n sisto r in a plastic envelope featuring stable blocking voltage, fast sw itching and high therm al cycling perform ance


    OCR Scan     		PDF PHP33N10 N50E PHP33N10E

    K7520

    Abstract: K752
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DE SCRIPTION N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope using


    OCR Scan     		PDF K7520-55 K7520 K752

    d25V

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t Speci f i cat i on P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode fie ld -e ffe d pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies


    OCR Scan     		PDF BUK436 -200B OT429 d25V

    w2a transistor

    Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
    Text: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )


    OCR Scan     		PDF 2SB1340 2SD1889 2SB1340 2SD1869. Tc-25 w2a transistor transistor w2a 2SD1869 2SD1889 transistor 120v transistor w2a 40

    BF470

    Abstract: BF472 BF471 BF469
    Text: Philips Semiconductors Product specification BF470; BF472 PNP high-voltage transistors FEATURES • Low feed back capacitance. APPLICATIONS • C lass-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO -126; S O T32 plastic package.


    OCR Scan     		PDF BF470; BF472 O-126; BF469 BF471. MAM272 BF470 BF470 BF472 BF471

    BF459

    Abstract: BF458 BF457
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BF457; BF458; BF459 DESCRIPTION NPN transistors in a TO -126; S O T32 plastic package. APPLICATIONS • Intended for video output stages in black-and-w hite and in co lou r television receivers.


    OCR Scan     		PDF BF457; BF458; BF459 O-126; BF457 BF458 BF459 BF458 BF457