D412 AOD412 30V 85A Search Results

D412 AOD412 30V 85A Result Highlights (5)

Part	Manufacturer	Description
H7N0312LD-E	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 85A 3.3Mohm LDPAK(L)/To-262
UPA2739T1A-E2-AY	Renesas Electronics Corporation	Pch Single Power Mosfet -30V -85A 2.8Mohm 8Pin HVSON (6051)
H7N0312LSTR-E	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 85A 3.3Mohm LDPAK(S)-(1)/To-263
H7N0602LSTR-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 85A 5.2Mohm LDPAK(S)-(1)/To-263
H7N0602AB-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 85A 5.2Mohm To-220Ab

D412 AOD412 30V 85A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR D412 Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.	Original	AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

TRANSISTOR D412

Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

Original

AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A

PDF