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Catalog Datasheet	MFG & Type	Document Tags	PDF
d3n04h Abstract: D3N04 AN569 MMDF3N04HD MMDF3N04HDR2 SMD310 Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode	Original	MMDF3N04HD MMDF3N04HD/D d3n04h D3N04 AN569 MMDF3N04HD MMDF3N04HDR2 SMD310	PDF
d3n04h Abstract: No abstract text available Text: MMDF3N04HD Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source	Original	MMDF3N04HD MMDF3N04HD/D d3n04h	PDF
E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl	PDF
d3n04h Abstract: MMDF3N04HDR2G d3n0 D3N04 AN569 MMDF3N04HD MMDF3N04HDR2 Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source	Original	MMDF3N04HD MMDF3N04HD/D d3n04h MMDF3N04HDR2G d3n0 D3N04 AN569 MMDF3N04HD MMDF3N04HDR2	PDF
d3n04h Abstract: AN569 MMDF3N04HD MMDF3N04HDR2 Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode	Original	MMDF3N04HD r14525 MMDF3N04HD/D d3n04h AN569 MMDF3N04HD MMDF3N04HDR2	PDF
d3n04h Abstract: AN569 MMDF3N04HD MMDF3N04HDR2 SMD310 Text: MOTOROLA Order this document by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3N04HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs	Original	MMDF3N04HD/D MMDF3N04HD MMDF3N04HD/D* d3n04h AN569 MMDF3N04HD MMDF3N04HDR2 SMD310	PDF
d3n04h Abstract: No abstract text available Text: MMDF3N04HD Power MOSFET 3 Amps, 40 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source	Original	MMDF3N04HD MMDF3N04HD/D d3n04h	PDF
d3n04h Abstract: D3N04 Text: MOTOROLA O rder th is docum ent by MMDF3N04HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMDF3N04HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N -C hannel Field E ffect Transistor DUAL TMOS POWER MOSFET 3.4 AMPERES	OCR Scan	MMDF3N04HD/D MMDF3N04HD MMDF3N04HDD d3n04h D3N04	PDF