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    D1858 TRANSISTOR Search Results

    D1858 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D1858 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1858

    Abstract: d1858 transistor transistor d1858 btd1858a3 NPN transistor ECB TO-92 500ma 1A IC20I THROUGH HOLE 4 PIN TO 220 PACKAGE IC date for ic component
    Text: CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description • High BVCEO • High current capability • Pb-free package Symbol Outline BTD1858A3


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    PDF C856A3 BTD1858A3 UL94V-0 D1858 d1858 transistor transistor d1858 btd1858a3 NPN transistor ECB TO-92 500ma 1A IC20I THROUGH HOLE 4 PIN TO 220 PACKAGE IC date for ic component

    transistor D1843

    Abstract: D1843 d1859 transistor transistor d1913 transistor D1710 D1875 D1835 transistor d1941 d1941 transistor D1853 transistor
    Text: DVP-PM APPLICATION MANUAL Table of Contents Chapter 1: Program Structure of DVP-PM 1.1 O100 Main Program . 1-1 1.1.1 Manual Motion in O100 Main Program . 1-2


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