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Untitled Abstract: No abstract text available Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	IDD12SG60C 20mA2) IDD12SG60C PG-TO252-3 D12G60C	PDF
D12G60C Abstract: No abstract text available Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	IDD12SG60C 20mA2) IDD12SG60C PG-TO252-3 D12G60C	PDF
d12g60 Abstract: smd marking cf RR D12G60C d12g Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	IDD12SG60C 20mA2) PG-TO252-3 D12G60C d12g60 smd marking cf RR D12G60C d12g	PDF
D12G60C Abstract: d12g60 IDD12SG60C JESD22 smd diode marking UJ Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	IDD12SG60C 20mA2) D12G60C d12g60 IDD12SG60C JESD22 smd diode marking UJ	PDF
D12G60 Abstract: diode smd ED 17 Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	IDD12SG60C 20mA2) D12G60 diode smd ED 17	PDF
Untitled Abstract: No abstract text available Text: IDH12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	IDH12SG60C 20mA2)	PDF
D12G60C Abstract: IDH12SG60C d12g60 JESD22 Text: IDH12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	IDH12SG60C 20mA2) D12G60C IDH12SG60C d12g60 JESD22	PDF
D12G60C Abstract: infineon d12g60c d12g60 Text: IDH12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	IDH12SG60C 20mA2) PG-TO220-2 D12G60C D12G60C infineon d12g60c d12g60	PDF
D12G60C Abstract: d12g60 IDD12SG60C JESD22 infineon d12g60c cuj6 Text: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	IDD12SG60C 20mA2) D12G60C d12g60 IDD12SG60C JESD22 infineon d12g60c cuj6	PDF
D12G60C Abstract: d12g60 Text: IDH12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	IDH12SG60C 20mA2) IDH12SG60C PG-TO220-2 D12G60C d12g60	PDF