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    KEMET Corporation MPXV1D0530LR68

    FIXED IND 680NH 12.6A 8.2MOHM SM
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    DigiKey MPXV1D0530LR68 Digi-Reel 5,107 1
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    Bristol Electronics MPXV1D0530LR68 300 4
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    KEMET Corporation MPX1D0530L6R8

    FIXED IND 6.8UH 3.5A 107.8 MOHM
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    DigiKey MPX1D0530L6R8 Cut Tape 4,455 1
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    Mouser Electronics MPX1D0530L6R8 3,713
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    KEMET Corporation MPXV1D0530L2R2

    FIXED IND 2.2UH 7.3A 24.6MOHM SM
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    DigiKey MPXV1D0530L2R2 Digi-Reel 4,414 1
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    TTI MPXV1D0530L2R2 Reel 5,000
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    KEMET Corporation MPXV1D0530L4R7

    FIXED IND 4.7UH 4.6A 62.2MOHM SM
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    DigiKey MPXV1D0530L4R7 Cut Tape 2,440 1
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    MPXV1D0530L4R7 Digi-Reel 2,440 1
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    KEMET Corporation MPXV1D0530L6R8

    FIXED IND 6.8UH 3.5A 107.8 MOHM
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    DigiKey MPXV1D0530L6R8 Cut Tape 1,007 1
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    Mouser Electronics MPXV1D0530L6R8 4,924
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    D053 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D0535J Teccor Electronics 22A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    D0535W Teccor Electronics 22A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF

    D053 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    On semiconductor date Code sot-143

    Abstract: 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6
    Text: PACDN042 Transient Voltage Suppressors and ESD Protectors Product Description The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .


    Original     		PDF PACDN042 PACDN042/43/44/45/46 MIL-STD-883D OT23-3 OT23-5 PACDN042/D On semiconductor date Code sot-143 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6

    18f24k22

    Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •


    Original     		PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412B DS41412B-page 18f24k22 PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi

    EVAL-AD5933EBZ

    Abstract: AD5933 AEL-4313 EVAL-AD5933EB AD5933YRSZ AD5933 rev. c AD5934 1024-POINT fec 34 XTAL-CM309S
    Text: 1 MSPSĂ12࿋ፆੇ ገ࣑ഗࢅྪஏ‫ݴ‬ဆᅏ AD5933 ༬Ⴀ ߁ຎ ੗Պ‫ײ‬๼‫ރރ؜‬ኵघ૤‫ۉ‬უLj๼‫؜‬ೕ୲ፌߛ‫ٳ‬100 kHz ੗Պ‫ײ‬ೕ୲෢௮ࠀీࢅ‫ز‬ႜI2Cথ੨ ೕ୲‫ݴ‬Ր୲ǖ27࿋ <0.1 Hz ፆੇ֪ଉ‫ྷݔ‬ǖ1 kΩ዁10 MΩ


    Original     		PDF AD5933 AD5934 1024-POINT MO-150-AC 60106-A RS-16) AD5933YRSZ AD5933YRSZ-REEL7 EVAL-AD5933EBZ AD5933 AEL-4313 EVAL-AD5933EB AD5933YRSZ AD5933 rev. c AD5934 fec 34 XTAL-CM309S

    pin diagram of PIC18f45k22

    Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •


    Original     		PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412D DS41412D-page pin diagram of PIC18f45k22 PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22

    ADM6384

    Abstract: ADM6384YKS23D3Z-R7 ADM6384YKS26D3Z-R7 ADM6384YKS29D1Z-R7 ADM6384YKS29D3Z-R7 ADM6384YKS31D1Z-R7 SC82
    Text: Microprocessor Supervisory Circuit in 4-Lead SC70 ADM6384 FEATURES FUNCTIONAL BLOCK DIAGRAMS ADM6384 VCC RESET GENERATOR VREF MR RESET GND DEBOUNCE 05305-001 Precision power supply monitoring 31 reset threshold options: 1.58 V to 5.0 V Four reset timeouts: 1 ms, 20 ms, 140 ms, and 1120 ms


    Original     		PDF ADM6384 ADM6384 D05305-0-4/11 ADM6384YKS23D3Z-R7 ADM6384YKS26D3Z-R7 ADM6384YKS29D1Z-R7 ADM6384YKS29D3Z-R7 ADM6384YKS31D1Z-R7 SC82

    AD5933

    Abstract: circuit diagram blood analyzer AD5934 ADuC702x 1024-POINT sweep generator max 038 05325 capacitive proximity sensor
    Text: 250 kSPS, 12-Bit Impedance Converter, Network Analyzer AD5934 FEATURES GENERAL DESCRIPTION Programmable output peak-to-peak excitation voltage to a max frequency of 100 kHz Programmable frequency sweep capability with serial I2C interface Frequency resolution of 27 bits <0.1 Hz


    Original     		PDF 12-Bit AD5934 16-lead AD5934 12-bit, RS-16 AD5933 circuit diagram blood analyzer ADuC702x 1024-POINT sweep generator max 038 05325 capacitive proximity sensor

    INTEL 845 MOTHERBOARD CIRCUIT diagram

    Abstract: 1N4148 ADP3120A ADP3188 intel 845 MOTHERBOARD pcb CIRCUIT diagram SUPPLY-ADP3190A 228nF
    Text: 6-Bit, Programmable 2-/3-/4-Phase, Synchronous Buck Controller ADP3190 FEATURES Selectable 2-, 3-, or 4-phase operation at up to 1 MHz per phase ±9.5 mV worst-case differential sensing error over temperature Logic-level PWM outputs for interface to external


    Original     		PDF ADP3190 ADP3190 RQ-28) ADP3190JRUZ-RL ADP3190JRQZ-RL1 ADP3190AJRUZ-RL1 ADP3190AJRQZ-RL1 28-Lead INTEL 845 MOTHERBOARD CIRCUIT diagram 1N4148 ADP3120A ADP3188 intel 845 MOTHERBOARD pcb CIRCUIT diagram SUPPLY-ADP3190A 228nF

    TDS714L

    Abstract: modulator 26MHz AD8302 spur spur free fractional PLL pong VCO190-1843T ADF4193 DCS1800 GSM900 TRANSISTOR SDM M6
    Text: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled by 20 μs 0.5° rms phase error at 2 GHz RF output


    Original     		PDF ADF4193 ADF4193 CP-32-3) ADF4193BCPZ ADF4193BCPZ-RL1 ADF4193BCPZ-RL71 EVAL-ADF4193EB1 EVAL-ADF4193EB2 32-Lead TDS714L modulator 26MHz AD8302 spur spur free fractional PLL pong VCO190-1843T DCS1800 GSM900 TRANSISTOR SDM M6

    M1110

    Abstract: D004 ic P155
    Text: M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System M1110 Parallel Ein-/Ausgabe Box Technische Beschreibung Eiserstraße 5 33415 Verl Datum 05.05.94 Telefon 05246/709-0 Telefax 05246/70980 Version 2.1 Seite 1 von 17 M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System


    Original     		PDF M1110 M1110 D12-4 D11-1 D11-2 D11-3 D11-4 D10-1 D10-2 D004 ic P155

    PCIe cable pinout

    Abstract: No abstract text available
    Text: PI3PCIE2612-B High Bandwidth, 6-Differential Channel 1:2 DP/PCIe Gen2 Display Mux, BTX Pinout Features Description • 6 Differential Channel, 1 to 2 demux that will support 5.0Gbps PCIexpress Gen2 signals on one path, and DP 1.1 signals on the second path


    Original     		PDF PI3PCIE2612-B -35dB PI3PCIE2612-B 56-Contact 56-contact, PD-2024 PI3PCIE2612-BZFE PS8932A PCIe cable pinout

    SBG5556REC

    Abstract: SBR5556REC SPR5556REC
    Text: A C INTERFACE INC IDE D j| D0533fl3 UDDQa3b 7 | S fa to STANLEY SUPER BRIGHT , LED LAMP ¡¡g g |§ § | RECTAN GLE T Y P E 2 .5 X 5mm T Y P E I SERIES • SELE C T IO N G U ID E COLOR MATERIAL . PART N U M B E R . GaAIAs S B R 5 546REC r 5556REC GaP S P R 5546REC, 5556REC


    OCR Scan     		PDF 5546REC^ 5556REG 5546RECr5556REC 5546REC 5556REC SBG5556REC SBR5556REC SPR5556REC

    BT153

    Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
    Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,


    OCR Scan     		PDF 7110fl2t, T0-220AB T0-220AB. BT153 TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062

    tfk 136

    Abstract: No abstract text available
    Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY6416C1BEG-80L 216-WORD 64-BIT THMY6416C1BEG TC59S6408BFT 64-bit THMY6416C1BEG) tfk 136

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY6480D1BEG-80L THMY6480D1BEG 608-word 64-bit TC59S6408BFTL 64-bit

    thy 266

    Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
    Text: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in


    OCR Scan     		PDF BTR59 OT-93 thy 266 m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 Gate Turn-Off Thyristors

    D018

    Abstract: D019 D032
    Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51E10C70 THMY51E10C70, THMY51E10C75, THMY51E10C80 864-word 72-bit TC59SM804CFT D018 D019 D032

    Intel 1103 DRAM

    Abstract: D03B intel 1103 ram D018 D019 D032
    Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF Y6432G1EG-80 432-WORD 64-BIT THMY6416E1BEG TC59SM708FT 64-bit Intel 1103 DRAM D03B intel 1103 ram D018 D019 D032

    D018

    Abstract: D019 D032 D051 THMY51E10B70
    Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51E10B70 864-WORD 72-BIT THMY51E10B TC59SM804BFT 72-bit aY51E10B70 D018 D019 D032 D051

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY721661 BEG-80 216-WORD 72-BIT THMY721661BEG TC59S6408BFT/BFTL 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY6480F1 BEG-80 608-WORD 64-BIT THMY6480F1BEG TC59S6408BFT 64-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY7280D1EG-80H 72-BIT THMY7280D1EG 608-word TC59S6408FT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF MY7216E1 BEG-80 216-WORD 72-BIT THMY7216E1BEG TC59S6408BFT 72-bit

    PM7628

    Abstract: No abstract text available
    Text: PM-7628/883 DUAL 8-BIT BUFFERED MULTIPLYING CMOS D/A CONVERTER Pre cisio n M o n o li th ic '' Inc. 1.0 SCOPE 1.1 Scope. This specification covers the detail requirements for a monolithic dual 8-bit digital-toanalog converter with on-chip latches for each DAC to allow easy microprocessor interface.


    OCR Scan     		PDF PM-7628/883 PM-7628AR/883 20-lead D0530-Q1 PM7628

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY6416G1 FG-80 216-WORD 64-BIT THLY6416G1FG TC59SM716FT/FTL