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    Infineon Technologies AG D04G60C

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    D04G60C

    Abstract: No abstract text available
    Text: IDH04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 4.5 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDH04SG60C 20mA2) PG-TO220-2 D04G60C D04G60C

    IDD04SG60C

    Abstract: JESD22 sm smd diode marking
    Text: IDD04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 600 V QC 4.5 nC 4 A I F; T C< 130 °C


    Original     		PDF IDD04SG60C 20mA2) IDD04SG60C JESD22 sm smd diode marking

    D04G60C

    Abstract: IDD04SG60C d04g60 JESD22
    Text: IDD04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 600 V QC 4.5 nC 4 A I F; T C< 130 °C


    Original     		PDF IDD04SG60C 20mA2) D04G60C IDD04SG60C d04g60 JESD22

    d04g60

    Abstract: No abstract text available
    Text: IDD04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 4.5 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDD04SG60C 20mA2) d04g60

    Untitled

    Abstract: No abstract text available
    Text: IDD04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery V DC 600 V QC 4.5 nC 4 A I F; T C< 130 °C


    Original     		PDF IDD04SG60C 20mA2)

    t600c

    Abstract: D04G60C PG-TO220-2 IDH04SG60C JESD22
    Text: IDH04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery V DC 600 V QC 4.5 nC 4 A I F; T C< 130 °C


    Original     		PDF IDH04SG60C 20mA2) t600c D04G60C PG-TO220-2 IDH04SG60C JESD22

    d04g60

    Abstract: No abstract text available
    Text: IDH04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 4.5 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDH04SG60C 20mA2) d04g60

    D04G60C

    Abstract: smd diode marking f4
    Text: IDD04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 4.5 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDD04SG60C 20mA2) PG-TO252-3 D04G60C D04G60C smd diode marking f4

    D04G60C

    Abstract: d04g60 IDH04SG60C JESD22
    Text: IDH04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 600 V QC 4.5 nC 4 A I F; T C< 130 °C


    Original     		PDF IDH04SG60C 20mA2) D04G60C d04g60 IDH04SG60C JESD22