D03H3E3 Search Results

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Untitled Abstract: No abstract text available Text: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Í2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V	OCR Scan	PDF	IRFM110A D03h3E3
OA 182 diode Abstract: No abstract text available Text: IRFM220A Advanced Power MOSFET FEATURES BVDSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1.13 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 \|aA (Max.) @ V DS = 200V	OCR Scan	PDF	IRFM220A OT-23 OT-89 S0T-223 003b323 OA 182 diode
Untitled Abstract: No abstract text available Text: IRFM214A A dvanced Power MOSEET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ID = 0 . 6 4 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 \|^A (M a x.) @ V DS = 250V	OCR Scan	PDF	IRFM214A OT-23 OT-89 S0T-223 003b323
IRFM014A Abstract: No abstract text available Text: IRFM014A A dvanced Power MOSEET FEATURES B V DSS - 60 V 0 .1 4 ß • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = 2 . 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage	OCR Scan	PDF	IRFM014A D03h3E3 IRFM014A
Untitled Abstract: No abstract text available Text: IRFM120A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V ■ Lower RDS(ON) : 0 .1 5 5 &(Typ.)	OCR Scan	PDF	IRFM120A D03h3E3
Untitled Abstract: No abstract text available Text: IRFM224A A dvanced Power MOSEET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 0 . 9 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 \|^A (M a x.) @ V DS = 250V	OCR Scan	PDF	IRFM224A OT-23 OT-89 S0T-223 003b323
33a sot23 diode Abstract: No abstract text available Text: IRFM210A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 0.77 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 \|aA (Max.) @ VDS = 200V	OCR Scan	PDF	IRFM210A Fig15. OT-23 OT-89 S0T-223 003b323 33a sot23 diode