CT60AM18B Search Results

CT60AM18B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CT60AM-18B		Mitsubishi	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V		Original	PDF
CT60AM-18B		Mitsubishi	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE		Original	PDF
CT60AM-18B		Renesas Technology	IGBT Chip, N Channel, 900V, TO-3PL, 3-Pin		Original	PDF
CT60AM-18B		Mitsubishi	IGBT - Resonant Inverter Use		Scan	PDF

CT60AM18B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ct60am Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V	Original	PDF	CT60AM-18B 20MAX. ct60am resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
P-Channel mosfet 400v to220 Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages	Original	PDF	CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
ct60am18b Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A	Original	PDF	CT60AM-18B ct60am18b BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
resonant inverter Abstract: CT60AM-18B HIGH VOLTAGE DIODE for microwave ovens Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	PDF
18b diode Abstract: CT60AM-18B Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
FS10KM12 Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20 Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings	OCR Scan	PDF	O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
CT60AM-18B Abstract: resonant inverter IGBT CT60AM CT60AM18B ct60am Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT60AM-18B RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 2 •— ' V c e s . 900V ' l e .60A	OCR Scan	PDF	CT60AM-18B 20MAX. 57KH23 CT60AM-18B resonant inverter IGBT CT60AM CT60AM18B ct60am
Untitled Abstract: No abstract text available Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR	OCR Scan	PDF	CT60AM-18B
CT-30sm-12 Abstract: TQ-220F Text: • IGBT FOR STROBO FLASHER Max. ratings Type No. V •on A} Vÿfft - - “ 400 130 40 10 ±0.1 7.0 400 130 40 10 ±0.1 7.0 TQ-220F 400 130 40 10 ±0.1 7.0 TO-HOiFin-eut! 400 130 40 10 ±0.1 400 130 16 10 ±0.1 4.0 400 130 16 10 ±0.1 2.0 TO-220\|F¡n-cul¡	OCR Scan	PDF	CT20AS-8 CT20TM-8 CT20VM-8 CT20VS-8 CT20ASL-8 CT20VML-8 CT20VSL-8 CT20ASJ-8 CT25AS-8 CT25ASJ-8 CT-30sm-12 TQ-220F
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	PDF	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V