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    CS 45-12 IOL Search Results

    CS 45-12 IOL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    10056845-114LF Amphenol Communications Solutions Quickie Header, Wire to Board Connector, Double Row, 14 Positions, 2.54 mm (0.1 in.), Right Angle, Low Profile Header 0.76 um (30 u\\.) Gold Mating Plating. Visit Amphenol Communications Solutions
    20021612-00020T1LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Header with eject latch, 20 contacts Visit Amphenol Communications Solutions
    10112690-G03-21ULF Amphenol Communications Solutions Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Surface Mount - Double row - 42 Positions - 2mm (0.079inch) - Horizontal Visit Amphenol Communications Solutions

    CS 45-12 IOL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HM 65687A MATRA MHS 64 K x 1 Ultimate CMOS SRAM Introduction The HM 65687A is a very low power CMOS static RAM organized as 65536 × 1 bit. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at


    Original     		PDF 5687A 5687A

    Untitled

    Abstract: No abstract text available
    Text: HM 65688A MATRA MHS 16 K x 4 Ultimate CMOS SRAM Introduction The HM 65688A is a very low power CMOS static RAM organised as 16384 × 4 bits. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at


    Original     		PDF 5688A 5688A

    Untitled

    Abstract: No abstract text available
    Text: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 × 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


    Original     		PDF

    FTS128K32-XXX

    Abstract: No abstract text available
    Text: FTS128K32-XXX 128Kx32 SRAM MODULE FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation


    Original     		PDF FTS128K32-XXX 128Kx32 MIL-STD-883 M5004 512Kx32 128Kx32; 256Kx16 512Kx8 FTS128K32N-XH1X FTS128K32-XXX

    Untitled

    Abstract: No abstract text available
    Text: FTS128K32-XXX 128Kx32 SRAM MODULE FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation


    Original     		PDF FTS128K32-XXX 128Kx32 MIL-STD-883 M5004 512Kx32 128Kx32; 256Kx16 512Kx8 FTS128K32N-XH1X I/O10

    IS62C256

    Abstract: IS62C256-45T IS62C256-45TI IS62C256-45U IS62C256-45UI IS62C256-70T IS62C256-70TI IS62C256-70UI
    Text: IS62C256 32K x 8 LOW POWER CMOS STATIC RAM FEATURES ISSI DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high- • Access time: 45, 70 ns • Low active power: 200 mW typical • Low standby power


    Original     		PDF IS62C256 IS62C256 SR072-1E IS62C256-45T IS62C256-45U IS62C256-70T IS62C256-70U IS62C256-45TI IS62C256-45UI IS62C256-45T IS62C256-45TI IS62C256-45U IS62C256-45UI IS62C256-70T IS62C256-70TI IS62C256-70UI

    Untitled

    Abstract: No abstract text available
    Text: 512K x 8 SRAM MODULE SYS8512FK-20/25/35/45 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 5.0 : November 1999 Description Features The SYS8512FK is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line package


    Original     		PDF SYS8512FK-20/25/35/45 SYS8512FK 256Kx4 2FKLI-20

    G2U TR

    Abstract: MIL-STD-883-M5004 Marl
    Text: FTS128K32-XXX 128Kx32 SRAM MODULE Features Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Available TTL Compatible Inputs and Outputs Packaging Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation • 66 pin, PGA Type H1 , 1.075" square, Hermetic


    Original     		PDF FTS128K32-XXX 128Kx32 128Kx32; 256Kx16 512Kx8 MIL-STD-883 M5004 FTS128K32N-XH1X I/O10 I/O11nt, G2U TR MIL-STD-883-M5004 Marl

    Untitled

    Abstract: No abstract text available
    Text: 512K x 8 SRAM MODULE SYS8512FK-20/25/35/45 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description Features The SYS8512FK is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line package


    Original     		PDF SYS8512FK-20/25/35/45 SYS8512FK 256Kx4

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYM1828 32K x 32 Static RAM Module Features Functional Description D The CYM1828 is a very high performance 1Ćmegabit static RAM module organized as 32K words by 32 bits. The module is conĆ structed using four 32K x 8 static RAMs mounted onto a multilayer ceramic subĆ


    Original     		PDF CYM1828 CYM1828 66pin,

    Untitled

    Abstract: No abstract text available
    Text: WED8LM32129C HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE PRELIMINARY* FEATURES • Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ Packaging ■ Low Power CMOS ■ TTL Compatible Inputs and Outputs ■ Built in Decoupling Caps and Multiple Ground Pins for Low


    Original     		PDF WED8LM32129C 128Kx32 512Kx32 128Kx32; 256Kx16 512Kx8 WED8LM32129C-E 128Kx32

    AS 15 -g

    Abstract: HM65789
    Text: HM 65789 MATRA MHS 16 K x 4 High Speed CMOS SRAM with Output Enable Introduction The HM 65789 is a high speed CMOS static RAM organized as 16384 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum


    Original     		PDF

    AS8S512K3

    Abstract: 5962-9461109HMX
    Text: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)


    Original     		PDF AS8S512K32 AS8S512K32A MIL-STD-883 512Kx32 461108HAX 5962-9461107HAX 5962-9461106HAX 5962-9461105HAX 5962-9461118HAX 5962-9461117HAX AS8S512K3 5962-9461109HMX

    Untitled

    Abstract: No abstract text available
    Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby


    Original     		PDF EDI88128CS 128Kx8 EDI88128LPS) 128Kx8 EDI88128CS

    CYM1841A

    Abstract: CYM1841C CYM1851
    Text: 1CY M18 41C CYM1841A CYM1841C 256K x 32 Static RAM Module Features individual bytes or any combination of multiple bytes through proper use of selects. • High-density 8-megabit SRAM module Writing to each byte is accomplished when the appropriate chip select CS and write enable (WE) inputs are both LOW.


    Original     		PDF CYM1841A CYM1841C 32-bit CYM1841A CYM1841C CYM1851

    F31Z

    Abstract: 922z
    Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 fim CMOS


    OCR Scan     		PDF HM62W8127H HM62W9127H 131072-word HM62W8127H/HM62W9127H 072-word 400-mil 32/36-pin 8127HJP/HLJP F31Z 922z

    Untitled

    Abstract: No abstract text available
    Text: 4<ÌE D P r e v ie w • SöböMSb DDGlObl 5 h 5 ■ MMHS I H I I f T M S e p te m b e r 1 9 9 0 NATRA M H S HM 65688 DATASHEET 16kx4 ULTIMATE CMOS SRAM FEATURES ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION


    OCR Scan     		PDF 16kx4

    Untitled

    Abstract: No abstract text available
    Text: Preview IlM lI September 1989 HM 65688 DATA SHEET 16 k X 4 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 pW (typ) DATA RETENTION : 0.8 jiW (typ)


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IlM lI September 1989 HM 65687 DATASHEET 64 k x 1 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 nW (typ) DATA RETENTION : 0.8 |xW (typ)


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


    OCR Scan     		PDF 0Q05b34

    Untitled

    Abstract: No abstract text available
    Text: HM62W1664H Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI Description The HM62W1664H is an asynchronous 3.3 V operation high speed static RAM organized as 64-kword x 16bit. It realizes high speed access time 30/35/45 ns with employing 0.8 |im CMOS process and high speed


    OCR Scan     		PDF HM62W1664H 65536-word 16-bit 64-kword 16bit. 400-mil 44-pin

    Untitled

    Abstract: No abstract text available
    Text: HM62W1664H Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI Description The HM62W1664H is an asynchronous 3.3 V operation high speed static RAM organized as 64-kword x 16bit. It realizes high speed access time 30/35/45 ns with employing 0.8 (Am CMOS process and high speed


    OCR Scan     		PDF HM62W1664H 65536-word 16-bit 64-kword 16bit. 400-mil 44-pin

    Untitled

    Abstract: No abstract text available
    Text: Tem ic M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 x 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


    OCR Scan     		PDF