cr 406 transistor
Abstract: MC3344P MC3344 RC differentiator MC3344L id2l 600PA AD1385 DS9665
Text: . MC3344 PROGRAMMABLE WITH The MC3344 designed FREQUENCY ADJUSTABLE is a generaI purpose SWiTCH HYSTERESIS programmable frequency for use in systems where a load must be switched at a predetermined an external resistor and determined frequency. Switch frequency
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MC3344
L/102s
pOSitf017
cr 406 transistor
MC3344P
MC3344
RC differentiator
MC3344L
id2l
600PA
AD1385
DS9665
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ICS8538-31
Abstract: ICS8538BG-31 ICS8538BG-31LF ICS8538BG-31LFT ICS8538BG-31T 8538BG-31
Text: ICS8538-31 Integrated Circuit Systems, Inc. LOW SKEW, 1-TO-8, CRYSTAL OSCILLATOR/ LVCMOS-TO-3.3V LVPECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS8538-31 is a low skew, high performance 1-to-8 Cr ystal Oscillator/LVCMOS-to-3.3V HiPerClockS LVPECL Fanout Buffer and a member of the
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ICS8538-31
ICS8538-31
8538BG-31
ICS8538BG-31
ICS8538BG-31LF
ICS8538BG-31LFT
ICS8538BG-31T
8538BG-31
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874-D20
Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,
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MIL-PRF-19500/301K
MIL-PRF-19500/301J
2N918
2N918UB,
MIL-PRF-19500.
874-D20
transformer JS 0432
d 2037 transistor
2n918 die
2N918UB
2N918 thermal resistance
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: nb 358 d
Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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ST92F124/ST92F150/ST92F250
8/16-BIT
J1850
TQFP64
14x14
PQFP100
14x20
TQFP100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
nb 358 d
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cr 406 transistor
Abstract: BUZ54
Text: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ54
0D14717
T-39-13
bbS3T31
0D14723
cr 406 transistor
BUZ54
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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cr 406 transistor
Abstract: 2SD2096 8002 Amplifier IC transistor t114
Text: 2SD2096 Transistor, NPN Features Dimensions Units : mm • available in HRT package • low collector saturation voltage, typically VCE(sat) = 0.3 V at Ic/Ib = 2 M 0.2 A • excellent current-to-gain characteristics 2SD2096 (HRT) • large collector loss: Pc = 1.8 W
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2SD2096
1000F
2SD2096
cr 406 transistor
8002 Amplifier IC
transistor t114
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Q62702-D1070
Abstract: TRANSISTOR D 1785 BD430
Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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T-33-/7
Q62702-D1070
fl23Sb05
Q0043b2
BD430
Q62702-D1070
TRANSISTOR D 1785
BD430
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cr 406 transistor
Abstract: QM100DY-2HB
Text: MITSUBISHI TRANSISTOR MODULES j QM100DY-2HBK ¡ HIGH POWER SWITCHING USE INSULATED TYPE I Q M 100DY-2HBK i Í • Ic Collector current. 10QA Collector-emitter voltage.1000V • hFE DC current gain.750
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QM100DY-2HBK
100DY-2HBK
E80276
E8Q271
cr 406 transistor
QM100DY-2HB
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MRF2001M
Abstract: motorola transistor r 724 MRF2001
Text: 12E D I t3b?ESM 0000024 T | MO T OR OL A SC r - 33-o¿r XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA _ T h e R F L in e _ 1 .0 W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER T R A N S IS TO R . . . designed for Class B and C common base broadband amplifier
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MRF2001M
MRF2001M
motorola transistor r 724
MRF2001
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transistor SMD p05
Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
transistor SMD p05
1981-R
TRANSISTOR SMD 2X y
127 D TRANSISTOR
476 16q
CP QUICK CONNECT
L-398
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MARCON NH capacitor
Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is
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SD2922
SD2922
PCI2170
020876A
MARCON NH capacitor
UT141-25
neosid* 10k
UT-141-25
4.7kohm trimmer
RG316-25
mount chip transistor 13W
diode L2.70
ferrite core shield transformer pin connection
vk200 ferrite bead
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SMD transistor UY
Abstract: smd transistor 406 1981-R TRANSISTOR SMD catalog transistor smd 127 transistor SMD p05 smd transistor 079 LDA100 transistor a102 LDA111
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 O utput C haracteristics C ollecto r C urrent mA Typical C apacitance (pF) (V e. = 1 0 V ;f = 1M Hz) C o llecto r D ark C urrent (nA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
SMD transistor UY
smd transistor 406
1981-R
TRANSISTOR SMD catalog
transistor smd 127
transistor SMD p05
smd transistor 079
transistor a102
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MRF2016M
Abstract: MRF201 MRF2016
Text: 12E D £ b3b?254 ÜOflñGSa 4 | MOT ORC LA SC MOTOROLA "33-11 XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF2016M T h e R F L in e 16 W 2 GHz M IC R O W A V E POW ER T R A N S IS T O R NPN SILICON MICROWAVE POWER TRANSISTOR N P N S IL IC O N . . . d esign ed for C la ss B and C com m on b a se broadband am plifier
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MRF2016M
MRF2016M
MRF201
MRF2016
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arco 406
Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G
MRF141G
arco 406
transistor fet N-Channel RF Amplifier
RF TOROIDS Design Considerations
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st 339
Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
Text: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030
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H21A1/2/3
St113C-11
ST1133-11
ST1131-11
ST1132-11
st 339
st339
diode 937 ke
SLOTTED OPTICAL SWITCH for C3
937 ke
ST1131-11
KE 34A
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lc7815
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 32E D T 'm Q ïb 0000157 1 E3J : T -S H / CMOS LSI 3029A 2-Pole 4-Position Analog Function Switch 1039C The LC7815 is a 2-pole 4-position analog function switch with 2 built-in C-MOS analog switches LC4066 type . A soft touch of a button enables switchover of the input signal source of an audio amplifier.
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1039C
LC7815
LC4066
QIF64B
MFP24
00077b3
MFP30
QIP80B
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IR 2148A
Abstract: No abstract text available
Text: GENERAL -.A Y O U I SEMICONDUCTOR SiZES FOR THE RECOMMENDED SURFACE MOUNT MINIMUM RECTIFIER MOUNTING AND THE DA H FL A T P A O G E N E R A L S E M IC O N D U C T O R R E C O M M E N D E D M IN IM U M M O U N T IN G PAD LAYO UT S IZ E S TO R THE S U R FA C E MO UNT R E C T IF IE R A N D THE FL£~ PACK
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DO-214AC
DO-2148A
IR 2148A
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Untitled
Abstract: No abstract text available
Text: BA9702FS Regulator, switching, 3 channel The BA9702FS is a switching regulator that uses a pulse width modulated system for a very stable output. Dimensions Units : mm BA9702FS (SSOP-A24) It contains three sets of error amplifiers, protectors, and pulse mode modulated
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BA9702FS
BA9702FS
SSOP-A24)
SSOP-A24
DQ12737
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SFC 2723
Abstract: TDB1146DP SFC 2723 M SFC2723 la 78140 TDB1146 sf.c thomson TDB1146-DP voltage regulator thomson CSF TDB1146CM
Text: o THOMSON-EFCIS Circuits Intégrés TDB1146 R E G U L A T E U R H A U T E T E N S IO N D E P R E C IS IO N P R E C IS IO N H IGH V O L T A G E R E G U L A T O R - V Le TDB1146 est un régulateur de tension à structure intégrée monolithique réalisé en technologie haute
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TDB1146
TDB1146
SFC 2723
TDB1146DP
SFC 2723 M
SFC2723
la 78140
sf.c thomson
TDB1146-DP
voltage regulator thomson CSF
TDB1146CM
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8U406
Abstract: T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312
Text: Memory/Standard tCs Table of Memory/Standard ICs Table of Memory / Standard ICs Ferroelectric memory Operating voltage range Capacity oils 16k Bit configurato Power supply Product No. (word X bit} BR24CF16F voltage (V) 2,048 X 8 5 Read (V) Write (V) 4.5 -5 .5
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BR24CF16F
voltai99
T0252-5)
T0220FP-5-5V
T0220FP-5
T0252-5
BA05ST
BA05SFP.
8U406
T0252
ba05sfp
BA05FP
BU2879
32segx4com
ba1032
BU9716AK
bu9716
BA312
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4GIT
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M D F2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
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MMDF2P02HD/D
2PHX43416-0
4GIT
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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Untitled
Abstract: No abstract text available
Text: £3 National Semiconductor August 1990 LH2426 Triple 80 MHz CRT Driver General Description Features The LH2426 contains three wide bandwidth, large signal amplifiers designed for large voltage swings at high frequen cies. The amplifiers work on a transimpedance principal i.e.,
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LH2426
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