DIODE 720
Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
22-March
DIODE 720
"Schottky Diode"
DIODE R3
CPD48V
high current schottky diode
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CPD48V
Abstract: No abstract text available
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
CPD48V
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Untitled
Abstract: No abstract text available
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
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high current schottky diode
Abstract: Schottky Diode CPD48 Schottky diode wafer
Text: PROCESS CPD48 Central Schottky Diode TM Semiconductor Corp. High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD48
high current schottky diode
Schottky Diode
CPD48
Schottky diode wafer
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high current schottky diode
Abstract: CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
high current schottky diode
CPD48V
"Schottky Diode"
DIODE 3T
Schottky diode wafer
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CP588V
Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: [email protected] http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.
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CPD48
CPD76
CPD78
CPD80
CPD83
CPD88
CPD91
CPD92
CPD96
CP188
CP588V
CPD76
CPD96
CP-392V
CP307
CP188
CP191
CPD48
CPD80
CPD91
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1N456
CPD64
1N456A.
1N457
1N457A.
1N458
BF244 datasheet
2N5133 equivalent
MPS5771
BD345
BD347
BF244
2n5248
bf256
2N3304
2n5910
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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2N2645
Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Text: PCN #: 119 Notification Date: 16 December 2010 mailto:[email protected] http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.
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CPD83V-1N914-WN
CPD83V-1N914A-WN
CPD83V-CMPD7000-WS
CPD83V-1N4148-WS
CPD83V-1N914-WR
CPD92X-CMPD6263-WR
CPZ25-CMZ5937B-WN
CPZ25-CMZ5940B-WN
CPZ25-1N4752A-WN
CPZ25-1N5918B-WN
2N2645
cpd83v-cmpd7000-ws
1N3070
CPZ25
CPD83V-1N4148-WN
CP191V-2N2222A-WN
CPZ25-CMZ5937B-WR
CPD83V
CPD83V-1N4148-WS
CPD98V
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marking code s1
Abstract: "MARKING CODE S1"
Text: Central' CMDSH-3 Semiconductor Corp. SUPERmini SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky diode, manufactured in a SUPERmini™ surface mount package, designed for fast switching applications requir ing a low forward voltage drop.
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100mA
CPD48
31-October
OD-323
marking code s1
"MARKING CODE S1"
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Untitled
Abstract: No abstract text available
Text: Central CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPSH-3 series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.
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OT-23
OT-23
16-June
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marking D3 SOT26
Abstract: No abstract text available
Text: Central" CMXSH-3 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three 3 Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar
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OT-26
CPD48
OT-26
marking D3 SOT26
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0C171
Abstract: SCHOTTKY DIODE SOT-143
Text: Central" CMFSH-3Ï semiconductor Corp. DUAL ISOLATED SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i type is a Silicon Dual Isolated Schottky diode designed for surface mount fast switching appli cations requiring a low forward voltage drop.
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OT-143
CPD48,
13-November
OT-143
0C171
SCHOTTKY DIODE SOT-143
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CMLSH-4
Abstract: No abstract text available
Text: Central“ CMLSH-4 SURFACE MOUNT PICOmini DUAL, ISOLATED SILICON SCHOTTKY DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4 are two individual electrically isolated 40 volt Schottky Diodes, in a space saving SOT-563 surface mount
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OT-563
CPD48
05-June
OT-563
CMLSH-4
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sot-23 MARKING CODE SP
Abstract: Marking Code .25c sot23 DIODE Sp marking code marking code r1 sot23 Marking Code 25c sot23 MARKING CODE 190 device marking code A1 marking F1 SOT23 marking CM sot23 fr marking code sot23
Text: Central" CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an
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OT-23
CPD48,
13-November
OT-23
sot-23 MARKING CODE SP
Marking Code .25c sot23
DIODE Sp marking code
marking code r1 sot23
Marking Code 25c sot23
MARKING CODE 190
device marking code A1
marking F1 SOT23
marking CM sot23
fr marking code sot23
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ED marking code diode
Abstract: D95E
Text: Central“ CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: SURFACE MOUNT SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an
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OT-23
OT-23
ED marking code diode
D95E
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Untitled
Abstract: No abstract text available
Text: Centrar CMFSH-3Ì Semiconductor Corp. DUAL, ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is
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OT-143
CPD48
OT-143
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diode marking code RJ
Abstract: RJ1002
Text: Central' CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE Semiconductor Corp. EN H A N C E D SPECIFICATIO N SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon Schottky Diodes in an
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OT-323
OT-323
diode marking code RJ
RJ1002
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Untitled
Abstract: No abstract text available
Text: Central“ CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for
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OD-123
100pA
100mA
CPD48
31-October
OD-123
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Untitled
Abstract: No abstract text available
Text: Central" CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for
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OD-123
CPD48,
31-October
OD-123
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diode 824
Abstract: No abstract text available
Text: Central" CMOSH-3 semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring
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CPD48,
13-November
OD-523
OD-523
diode 824
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marking sSH sot-23
Abstract: marking code 3c diode MARKING CODE SSH marking b1d
Text: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SUPERmini SILICON SCHOTTKY DIODES CMSSH-3: CMSSH-3A CMSSH-3C CMSSH-3S Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini™ surface mount pack
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OT-323
OT-323
marking sSH sot-23
marking code 3c diode
MARKING CODE SSH
marking b1d
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diode Marking Code 53
Abstract: No abstract text available
Text: Central" CMOSH-3 Semiconductor eorp. SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring
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100hA
100mA
CPD48
13-November
OD-523
OD-523
diode Marking Code 53
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4E diode
Abstract: MARKING 4 SOD523 marking code 4e
Text: Central CM0SH-4E Semiconductor Corp. E N H A N C E D SPECIFICATIO N SCHOTTKY DIODE EN H AN CED UlIRAmini <E> DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package.
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OD-523
CPD48
10-Decem
OD-523
10-December
4E diode
MARKING 4 SOD523
marking code 4e
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