CPA4
Abstract: Jumper JP2e LEDTX CPD14 A41 transformer PCD-15 a4510 CPD11 MCS 96 users manual CPA17
Text: ASSP CMOS DK86967 Users Guide Table of Contents List of Figures Introduction .3 Design Kit DK86967-ISA Schematic .3 Board Configurations .5
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DK86967
DK86967-ISA
DK86967-PCC
CPA4
Jumper JP2e
LEDTX
CPD14
A41 transformer
PCD-15
a4510
CPD11
MCS 96 users manual
CPA17
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Untitled
Abstract: No abstract text available
Text: SGA3286Z SGA3286ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA3286Z
SGA3286ZDC
5000MHz,
OT-86
SGA3286Z
850MHz
DS110812
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SGA3286ZSR
Abstract: mmic a32 rfmd mmic 1950 cd
Text: SGA3286Z SGA3286ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA3286Z
SGA3286ZDC
5000MHz,
OT-86
SGA3286Z
850MHz
DS100915
SGA3286ZSR
mmic a32
rfmd mmic
1950 cd
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rfmd mmic
Abstract: SGA-3286Z SGA3286ZSR
Text: SGA3286Z SGA3286ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA3286ZDC
5000MHz,
SGA3286Z
OT-86
SGA3286Z
850MHz
DS110812
rfmd mmic
SGA-3286Z
SGA3286ZSR
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RD2 TP10
Abstract: RC1206FR-07100K Varitronix LCD vim VJ1206A150J p605 8 pins LN28RALXU CC1206KRX7R9BB104 TSOC 6 alps lcd 14 pin TSOC6
Text: Appendix A3 QWIK&LOW BOARD IN DETAIL The Qwik&Low board was designed by the author, with creative insights from Rick Farmer who developed the board layout and from Bill Kaduck and Dave Cornish of MICRODESIGNS who are producing the board. The Gerber files for the board artwork are freely available from www.qwikandlow.com along with the schematic and
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pea77008
RD2 TP10
RC1206FR-07100K
Varitronix LCD vim
VJ1206A150J
p605 8 pins
LN28RALXU
CC1206KRX7R9BB104
TSOC 6
alps lcd 14 pin
TSOC6
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TXC-04002-AIPL
Abstract: TXC-04002-BIPL TranSwitch Corporation
Text: TB-518 TECHNICAL BULLETIN ADMA-E1 VLSI Device, TXC-04002B Differences Between the “A” and “B” Versions of the ADMA-E1 Device PURPOSE OF THIS TECHNICAL BULLETIN TranSwitch has introduced a “B” version of the ADMA-E1 VLSI device, TXC-04002B, which has some
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TB-518
TXC-04002B
TXC-04002B,
TXC-04002.
TXC-04002B-TB1
TXC-04002-AIPL
TXC-04002-BIPL
TranSwitch Corporation
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74AHC2G32
Abstract: 74AHC2G32DC 74AHC2G32DP 74AHCT2G32 74AHCT2G32DC 74AHCT2G32DP JESD22-A114E
Text: 74AHC2G32; 74AHCT2G32 Dual 2-input OR gate Rev. 02 — 20 January 2009 Product data sheet 1. General description The 74AHC2G32; 74AHCT2G32 is a high-speed Si-gate CMOS device. The 74AHC2G32; 74AHCT2G32 provides two 2-input OR gates. 2. Features • Symmetrical output impedance
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74AHC2G32;
74AHCT2G32
74AHCT2G32
JESD22-A114E
JESD22-A115-A
JESD22-C101C
74AHC2G32DP
74AHC2G32
74AHC2G32DC
74AHC2G32DP
74AHCT2G32DC
74AHCT2G32DP
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Untitled
Abstract: No abstract text available
Text: 74AHC2G32; 74AHCT2G32 Dual 2-input OR gate Rev. 3 — 14 May 2013 Product data sheet 1. General description The 74AHC2G32; 74AHCT2G32 is a high-speed Si-gate CMOS device. The 74AHC2G32; 74AHCT2G32 provides two 2-input OR gates. 2. Features and benefits Symmetrical output impedance
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74AHC2G32;
74AHCT2G32
74AHCT2G32
JESD22-A114E
JESD22-A115-A
JESD22-C101C
74AHC2G32DP
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SMD CODE W17
Abstract: w37 FET SOT W17 SMD transistor A65 SMD diode u2 a54 SMD w35 Transistor A36 SMD w13 SMD sot 23 w18 smd transistor A44 SMD
Text: TLV320AIC10/11 EVM User’s Guide July 2000 AAP Data Converter Group SLWU003C IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TLV320AIC10/11
SLWU003C
accorA38
12X3X
PEG36TS-TBR
TLV320AIC10/11EVM
6-Jun-2000
SMD CODE W17
w37 FET
SOT W17 SMD transistor
A65 SMD
diode u2 a54
SMD w35 Transistor
A36 SMD
w13 SMD sot 23
w18 smd transistor
A44 SMD
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Untitled
Abstract: No abstract text available
Text: 74LVTN16244B 3.3 V 16-bit buffer/driver; 3-state Rev. 5 — 2 April 2012 Product data sheet 1. General description The 74LVTN16244B is a high-performance BiCMOS product designed for VCC operation at 3.3 V. This device is a 16-bit buffer and line driver featuring non-inverting 3-state bus outputs.
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74LVTN16244B
16-bit
74LVTN16244B
JESD78B
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74AHC2G32
Abstract: 74AHC2G32DC 74AHC2G32DP 74AHCT2G32 74AHCT2G32DC 74AHCT2G32DP
Text: INTEGRATED CIRCUITS DATA SHEET 74AHC2G32; 74AHCT2G32 Dual 2-input OR gate Product specification 2003 Dec 11 Philips Semiconductors Product specification Dual 2-input OR gate 74AHC2G32; 74AHCT2G32 FEATURES DESCRIPTION • Symmetrical output impedance The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS
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74AHC2G32;
74AHCT2G32
74AHC2G/AHCT2G32
EIA/JESD22-A114-A
EIA/JESD22-A115-A
EIA/JESD22-C101
OT505-2
74AHC2G32
74AHC2G32DC
74AHC2G32DP
74AHCT2G32
74AHCT2G32DC
74AHCT2G32DP
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A22 SMD MARKING CODE
Abstract: SMD MARKING CODE 1D6 SMD MARKING CODE 1D7 SMD MARKING CODE 2d1 A30 MARKING CODE 2D4 SMD marking a26 smd marking A26 smd marking code b6 SMD marking code B10
Text: 74LVC16374A; 74LVCH16374A 16-bit edge-triggered D-type flip-flop with 5 V tolerant inputs/outputs; 3-state Rev. 06 — 12 February 2009 Product data sheet 1. General description The 74LVC16374A and 74LVCH16374A are 16-bit edge-triggered flip-flops featuring
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74LVC16374A;
74LVCH16374A
16-bit
74LVC16374A
74LVCH16374A
ICP1020807
30-Nov-2010
A22 SMD MARKING CODE
SMD MARKING CODE 1D6
SMD MARKING CODE 1D7
SMD MARKING CODE 2d1
A30 MARKING CODE
2D4 SMD
marking a26
smd marking A26
smd marking code b6
SMD marking code B10
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HXQFN60
Abstract: No abstract text available
Text: 74LVTN16245B 3.3 V 16-bit transceiver; 3-state Rev. 5 — 5 April 2012 Product data sheet 1. General description The 74LVTN16245B is a high-performance BiCMOS product designed for VCC operation at 3.3 V. This device is a 16-bit transceiver featuring non-inverting 3-state bus compatible outputs
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74LVTN16245B
16-bit
74LVTN16245B
HXQFN60
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Untitled
Abstract: No abstract text available
Text: 74AHC2G32-Q100; 74AHCT2G32-Q100 Dual 2-input OR gate Rev. 1 — 12 March 2014 Product data sheet 1. General description The 74AHC2G32-Q100; 74AHCT2G32-Q100 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
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74AHC2G32-Q100;
74AHCT2G32-Q100
74AHCT2G32-Q100
AEC-Q100
AHCT2G32
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LVTH16374A
Abstract: No abstract text available
Text: 74LVT16374A; 74LVTH16374A 3.3 V 16-bit edge-triggered D-type flip-flop; 3-state Rev. 10 — 2 April 2012 Product data sheet 1. General description The 74LVT16374A; 74LVTH16374A are high performance BiCMOS products designed for VCC operation at 3.3 V. This device is a 16-bit edge-triggered D-type flip-flop featuring non-inverting 3-state
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74LVT16374A;
74LVTH16374A
16-bit
74LVTH16374A
LVTH16374A
LVTH16374A
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Untitled
Abstract: No abstract text available
Text: 74LVT16245B; 74LVTH16245B 3.3 V 16-bit transceiver; 3-state Rev. 10 — 1 March 2012 Product data sheet 1. General description The 74LVT16245B; 74LVTH16245B is a high-performance BiCMOS product designed for VCC operation at 3.3 V. This device is a 16-bit transceiver featuring non-inverting 3-state bus compatible outputs
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74LVT16245B;
74LVTH16245B
16-bit
74LVTH16245B
LVTH16245B
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sot-23 marking code C33
Abstract: A32 SOT23 code a32 sot SOT "GBA" GH1 sot-23 marking code GEC bc858c g3l MARKING G1.G BC817-25 BC847C
Text: U.S. European Type Series SST European PRO ELECTRON Type SOT-23 •P ackage style and dimensions SST Package (U. S. /European SOT-23) Dimensions 0- 15 - o ^ o s j ^ ( I ) Emitter (2 ) Base (3 ) Collector Actual size Enlarged (X 3 .0 ) NPN Transistors Electrical characteristics of part No. type can be looked up from the data of DIE No.
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OT-23)
BC817-16
100mA/
BC817-25
BC847A
BC847B
BC847C
BC848A
sot-23 marking code C33
A32 SOT23
code a32 sot
SOT "GBA"
GH1 sot-23
marking code GEC
bc858c g3l
MARKING G1.G
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MARKING CODE R1C
Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95
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OT-23)
SC-59
SC-59/Japanese
-95-o
GD1D47S
00104A0
MARKING CODE R1C
R2F SOT-23
R1H MARKING CODE
1T1 SOT-23
MMST3904
MMST8598
SOT-23 MARKING R2X
SSTA29
R2C marking
SOT-23 R2C
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sot83
Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions
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OT-23)
SC-59
SC-59/Japanese
-95-o
sot83
MARKING CODE R1C
marking r2k
IC marking R2k
R2C marking
marking r1c
SOT23 R2P
marking code R2C
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sot23 marking code 8pf
Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V
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OT-23)
SC-59/Japanese
SST1130
MMST1130
200mA
SST5088
MMST5088
100nA
SST5089
sot23 marking code 8pf
marking r2k
R2Z SOT23
SSTA29
G1F G1K G3F
MARKING CODE B25 SOT23-5
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NPN CBO 40V CEO 25V EBO 5V
Abstract: MMST8598
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.
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OT-23)
200mA
SC-59/Japanese
SST1130
MMST1130
SST5088
MMST5088
100nA
50MHz
NPN CBO 40V CEO 25V EBO 5V
MMST8598
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Untitled
Abstract: No abstract text available
Text: 3A Introduction 3.1.1 Feature List Optimal Performance: Next-Generation Product: Backwards Compatible: Simple to Use: Highly Integrated: Innovative Architecture: Ultra-Small footprint: 80 Mbyte per second Block Transfer Rates VME64 transactions, including A64/D64, A40/MD32
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VME64
A64/D64,
A40/MD32
CY7C960
CY7C961
160-Pin
64-Lead
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Untitled
Abstract: No abstract text available
Text: CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF Complete VMEbus address and data interface, except buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus transferrate Selectable atomic or decoupled mode Programmable A32 and A24 slave image bases
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CA91C015
31-longword
CA91C015
CA91C014
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75bEb
6F998
OT143
bf998 Mop
BF998
marking t54
PHILIPS MOSFET MARKING
PHILIPS MOSFET
mcb349
dual gate fet
N-channel dual-gate MOS-FET for tv
DUAL GATE MOS-FET
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