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    CLASS A PUSH PULL POWER AMPLIFIER Search Results

    CLASS A PUSH PULL POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    CLASS A PUSH PULL POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    eudyna GaAs FET Amplifier

    Abstract: FLL2400IU-2C Eudyna Devices
    Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL2400IU-2C FLL2400IU-2C eudyna GaAs FET Amplifier Eudyna Devices

    FLL2400IU-2C

    Abstract: RF POWER amplifier 10 watt
    Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL2400IU-2C FLL2400IU-2C 12-R0 RF POWER amplifier 10 watt

    Fujitsu GaAs FET Amplifier

    Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
    Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL2400IU-2C FLL2400IU-2C FCSI1100M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design

    08120

    Abstract: SDM-08120
    Text: SDM-08120 Product Description 869-894 MHz Class AB 120W Power Amplifier Module The SDM-08120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a


    Original     		PDF SDM-08120 SDM-08120 AN054, EDS-103346 08120

    120W amplifier

    Abstract: SDM-09120 q458
    Text: SDM-09120 Product Description 925-960 MHz Class AB 120W Power Amplifier Module The SDM-09120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a


    Original     		PDF SDM-09120 SDM-09120 AN054, EDS-103478 120W amplifier q458

    MP7510DS

    Abstract: ic ca 810 audio amp audio amplifier IC 810 4000 w power amplifier circuit diagram class d 810 audio amplifier mono mosfet amplifier diagram power mosfet audio amplifier class-A class A push pull power amplifier mp7510 SOIC8 package
    Text: MP7510 18W Class D Mono Audio Amplifier Monolithic Power Systems PRELIMINARY General Description Features The MP7510 is a fully integrated 18W Mono Class D Audio Amplifier. This simple, low cost amplifier utilizes a single ended, push-pull, output structure


    Original     		PDF MP7510 MP7510 MP7510DS ic ca 810 audio amp audio amplifier IC 810 4000 w power amplifier circuit diagram class d 810 audio amplifier mono mosfet amplifier diagram power mosfet audio amplifier class-A class A push pull power amplifier SOIC8 package

    video balun schematic

    Abstract: LDMOS 60W POWER AMPLIFIER GSM repeater circuit SDM-09060-B1F video balun AN067
    Text: SDM-09060-B1F 925-960 MHz Class AB 60W Power Amplifier Module Product Description The SDM-09060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a


    Original     		PDF SDM-09060-B1F SDM-09060-B1F AN054 EDS-104211 200oC video balun schematic LDMOS 60W POWER AMPLIFIER GSM repeater circuit video balun AN067

    Untitled

    Abstract: No abstract text available
    Text: SDM-09120-1Z Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Z 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-09120-1Z SDM-09120-1Z AN054, EDS-105407

    Untitled

    Abstract: No abstract text available
    Text: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-09120-1Y SDM-09120-1Y AN054, EDS-105407

    Untitled

    Abstract: No abstract text available
    Text: SDM-09120 Product Description 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-09120 SDM-09120 AN054, EDS-103478

    Untitled

    Abstract: No abstract text available
    Text: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-09120-1Y SDM-09120-1Y AN054, EDS-105407

    Untitled

    Abstract: No abstract text available
    Text: SDM-08060-B1F Product Description 869-894 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage.


    Original     		PDF SDM-08060-B1F SDM-08060-B1F EDS-104208 AN054,

    564 fet

    Abstract: FLL810IQ-3C
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original     		PDF FLL810IQ-3C FLL810IQ-3C 564 fet

    L-Band

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original     		PDF FLL810IQ-4C FLL810IQ-4C L-Band

    FLL810IQ-3C

    Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original     		PDF FLL810IQ-3C FLL810IQ-3C FCSI05019M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier

    FLL810IQ-4C

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original     		PDF FLL810IQ-4C FLL810IQ-4C

    FLL600IQ-2

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 FCSI0597M200

    Untitled

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original     		PDF FLL810IQ-4C FLL810IQ-4C

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 FCSI0597M200

    FLL810IQ-4C

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original     		PDF FLL810IQ-4C FLL810IQ-4C Rat4888

    Untitled

    Abstract: No abstract text available
    Text: SDM-08120 Product Description 869-894 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-08120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-08120 SDM-08120 AN054, EDS-103346

    Untitled

    Abstract: No abstract text available
    Text: FLL400IP-3 fujÎt su L-Band Medium & High Power GaAs FETs FEATURES • • • • Push-Pull Configuration High PAE: 43% Typ. Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL400IP-3 FLL400IP-3

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    OCR Scan     		PDF FLL600IQ-2 FLL600IQ-2 FCSI0597M200