Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ST90E27/T27 ST90E28/T28 M S ^ ( g [l^ ( O T ® iQ S 16K EPROM HCMOS MCUs WITH RAM Register oriented 8/16 bit CORE with RUN, WFI and HALT modes Minimum instruction cycle time: 500ns (12MHz internal) Internal M em ory: EPROM 16Kbytes RAM
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ST90E27/T27
ST90E28/T28
500ns
12MHz
16Kbytes
256bytes
40-lead
ST90T27.
PDIP40
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V53C16129H HIGH PERFORMANCE 128K X 16 BIT EDO PAGE MODE CMOS DYNAMIC DRAM PRELIMINARY 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address A ccess Tim e, (tc/vO 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C16129H
16-bit
40-Pin
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53C104D
Abstract: No abstract text available
Text: M O S E L VTTEUC V53C104D HIGH PERFORMANCE, LOW POWER 256K X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60 70 80 Max. RAS Access Time, tFiAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cycle Time, (tp c )
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V53C104D
V53C104D
V53C104D-80
53C104D
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Untitled
Abstract: No abstract text available
Text: N N 5 1 V 1 6 1 6 5 A / N N 5 1 V 1 8 1 6 5 A E D O s e r ie s H y p e r P a g e M o d e C M O S 1M x x N P N w i W l 1 6 b it D y n a m ic R A M Preliminary Specification d e s c rip tio n The NN51V16165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga
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NN51V16165A/18165A
128ms
NN51V181
65AXXIX)
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CL2C12
Abstract: No abstract text available
Text: MOSEL- VITELIC V53C100N HIGH PERFORMANCE, 3.3 VOLT 1 M X 1 B IT FA ST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C100N 60/60L PRELIMINARY 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns
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V53C100N
60/60L
V53C100N
70/70L
80/80L
V53C100NL
V53C100N-80
400fiA
V53C100NL
CL2C12
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Untitled
Abstract: No abstract text available
Text: M54HC137 M74HC137 SGS-THOMSON * 5 7 M 3 TO 8 LINE DECODER/LATCH INVERTING • HIGHSPEED tpD = 11 ns (TYP.) AT Vcc = 5 V . LOW POWER DISSIPATION Icc = 4 (iA (MAX.) AT Ta = 25 °C ■ HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY
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M54HC137
M74HC137
54/74LS137
M54HC137F1R
M74HC137M1R
M74HC137B1R
M74HC137C1R
M54/74HC137
005453b
M54/M74HC137
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Untitled
Abstract: No abstract text available
Text: M O S E L V iT E U C V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE 50 60 70 50 ns 60 ns 70 ns Max. Column Address Access Time, tCAA 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns
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V53C181608
16-bit
cycles/16
42-pin
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