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    CIRCLE OF CONSTANT NOISE Search Results

    CIRCLE OF CONSTANT NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425A/BPA Rochester Electronics LLC CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) Visit Rochester Electronics LLC Buy
    CLC428A/BPA Rochester Electronics LLC CLC428 - OP AMP, DUAL, LOW NOISE, WIDEBAND, VOLT FDBK - Dual marked (5962-9470801MPA) Visit Rochester Electronics LLC Buy
    F2923EVBI Renesas Electronics Corporation Evaluation Board for F2923 SP2T with Constant Impedance, K|z| Visit Renesas Electronics Corporation
    F2923NCGI Renesas Electronics Corporation Constant Impedance K|z| SP2T RF Switch Visit Renesas Electronics Corporation
    F2923NCGI8 Renesas Electronics Corporation Constant Impedance K|z| SP2T RF Switch Visit Renesas Electronics Corporation

    CIRCLE OF CONSTANT NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    matching with smith chart

    Abstract: AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1852 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF com/an1852 MAX2320: MAX2720: MAX2721: AN1852, APP1852, Appnote1852, matching with smith chart AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214

    circle surround 2 IC

    Abstract: Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF com/an1851 MAX2320: MAX2720: MAX2721: AN1851, APP1851, Appnote1851, circle surround 2 IC Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract

    APP1851

    Abstract: LS12 MAX2320 SS11 s11s
    Text: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,


    Original     		PDF MAX2320: com/an1851 AN1851, APP1851, Appnote1851, APP1851 LS12 MAX2320 SS11 s11s

    RF transistors with s-parameters

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave

    high power FET transistor s-parameters

    Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1

    transistor s11 s12 s21 s22

    Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21

    APP742

    Abstract: smith chart smith MAX2320 MAX2338 MAX2358 MAX2387 MAX2388 MAX2472 matching with smith chart
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection


    Original     		PDF MAX2472 900MHz MAX2387: MAX2388: MAX2472: MAX2473: MAX2640: MAX2641: MAX2642: MAX2644: APP742 smith chart smith MAX2320 MAX2338 MAX2358 MAX2387 MAX2388 matching with smith chart

    MAX2320

    Abstract: MAX2338 MAX2358 MAX2472 SIEMENS saw filter Maxim Integrated MAX2640 28 27 app abstract
    Text: Maxim > App Notes > Wireless, RF, and Cable Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith chart. Examples are shown plotting reflection


    Original     		PDF MAX2472 900MHz MAX2388: MAX2472: MAX2473: MAX2640: MAX2641: MAX2642: MAX2644: MAX2645: MAX2320 MAX2338 MAX2358 SIEMENS saw filter Maxim Integrated MAX2640 28 27 app abstract

    smith chart

    Abstract: max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642
    Text: WIRELESS, RF, AND CABLE Application Note 742: Mar 23, 2001 Impedance Matching and the Smith Chart: The Fundamentals Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection coefficients, impedances and admittances. A sample matching network is designed at 60 MHz using graphical methods.


    Original     		PDF MAX2320: MAX2338: MAX2387: MAX2388: MAX2640: MAX2641: MAX2642: MAX2644: MAX2645: MAX2648: smith chart max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642

    ADL5521/23

    Abstract: No abstract text available
    Text: Preliminary Technical Data Sheet FEATURES 400 MHz to 4000 MHz Low Noise Amplifier ADL5523 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Noise figure of 0.9 dB at 900 MHz Including external input match Gain of 21.5 dB at 900 MHz OIP3 of 35.0 dBm at 900 MHz


    Original     		PDF ADL5521 ADL5523 ADL5523 ADL5523ACPZ-R7 ADL5523-EVALZ1 061507-B PR06829-0-7/08 ADL5521/23

    Untitled

    Abstract: No abstract text available
    Text: 400 MHz to 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz


    Original     		PDF ADL5523 ADL5521 ADL5521 ADL5521ACPZ-R7 ADL5521-EVALZ1 061507-B PR06828-0-7/08

    BLM21PG600SN1D

    Abstract: ATF-50189 ATF50189 RO4350
    Text: ATF-50189 2.4 GHz high-linearity second stage LNA/ driver using ATF-50189 Application Note 5106 Introduction EPHEMT biasing Avago Technologies’ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high output IP3 LNA Q2


    Original     		PDF ATF-50189 ATF-50189 5989-2799EN AV01-0677EN BLM21PG600SN1D ATF50189 RO4350

    matching circuit of atf 52189

    Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
    Text: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high


    Original     		PDF ATF-52189 ATF-52189 ATF-521P8 5989-4040EN matching circuit of atf 52189 BLM21PG600SN1D 53189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p

    ATF-53189

    Abstract: SMA CONN ATF - 53189 AMPLIFIER ATF-521P8 ATF53189 RO4350 53189
    Text: 2.0 GHz high-linearity second stage LNA/driver using Avago Technologies ATF-53189 Application Note 5244 Introduction Circuit Description Avago Technologies’ ATF-53189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high


    Original     		PDF ATF-53189 ATF-53189 ATF-521P8 5989-3846EN SMA CONN ATF - 53189 AMPLIFIER ATF53189 RO4350 53189

    si4432

    Abstract: Si443x AN427 mathcad Si433X SI4432-V2
    Text: AN427 EZRADIOPRO Si433X & Si443X RX LNA MATCHING 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si433x and Si443x family of RFICs. We desire to simultaneously achieve two goals with the matching network:


    Original     		PDF AN427 Si433X Si443X Si433x si4432 AN427 mathcad SI4432-V2

    AMPSA

    Abstract: DS-AMPSA-MTCH-2014.2.5
    Text: AWR Connected AMPSA OVERVIEW AWR Connected™ for AMPSA Impedance-Matching Wizard IMW provides a state-of-the-art synthesis solution for impedance-matching networks for/of RF and microwave circuits and devices such as amplifiers, antennas, etc. Integrating


    Original     		PDF DS-AMPSA-MTCH-2014 AMPSA DS-AMPSA-MTCH-2014.2.5

    RO4350B

    Abstract: MGA-61563 GRM1555C1H330JZ01E isolator 2 2.1 GHz AN5012 RO4350 0603CS 0604HQ 4350B E4413A
    Text: A 2.2-2.9 GHz Low Noise Amplifier Using Avago Technologies’ MGA-61563 Application Note 5237 MGA-61563 is the high performance GaAs MMIC amplifier fabricated with Avago Technologies’ E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563 uses


    Original     		PDF MGA-61563 MGA-61563 MGA-6156is E4419B E4413A 5989-3285EN AV02-1428EN RO4350B GRM1555C1H330JZ01E isolator 2 2.1 GHz AN5012 RO4350 0603CS 0604HQ 4350B

    Rogers 4350B

    Abstract: 4350B SKY67100 SKY67100-396LF SKY67101 Rogers 4350B substrate
    Text: WHITE PAPER Designing Ultra Low Noise Amplifiers for Infrastructure Receiver Applications By Fikret Altunkilic, Alan Miller, Vivian Tzanakos and Michele Lewis Introduction Amplifiers used in wireless infrastructure receiver applications have the key requirements of low noise, high linearity, and


    Original     		PDF SKY67101-396LF, SKY67100-396LF, Rogers 4350B 4350B SKY67100 SKY67100-396LF SKY67101 Rogers 4350B substrate

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION


    Original     		PDF BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13

    MRC034

    Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure


    Original     		PDF BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13 MRC034 MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053

    cavity resonator

    Abstract: two cavity resonator design dielectric resonator oscillator
    Text: TM Single Frequency Cavity Resonator Patent Pending DLI's Cavity Resonators set a new standard for high Q resonator performance across a broad spectrum of frequencies. High Q resonators play a critical role in system noise performance, and employing this advantage is


    Original     		PDF

    41ga

    Abstract: No abstract text available
    Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz Integrated bias control circuit


    Original     		PDF ADL5523 ADL5521 ADL5521 ADL5521ACPZ-R71 ADL5521ACPZ-WP1 ADL5521-EVALZ J-STD-020 J-STD-20 41ga

    ADL5523

    Abstract: ADL5521-EVALZ ADL5521 900MHZ
    Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz


    Original     		PDF ADL5521 ADL5523 ADL5521 061507-B ADL5521ACPZ-R71 ADL5521ACPZ-WP1 ADL5521-EVALZ J-STD-020 ADL5523 ADL5521-EVALZ 900MHZ

    gummel

    Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
    Text: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands


    OCR Scan     		PDF ED-31 2048/JessiT28 30GHz, 60Ghz gummel small signal high frequency bipolar transistor IC sequential DATA BASE gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency