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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS 42E INC D ? cib4142 O Ü l l l S T KM 23C 4200A 4 • CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144x18 • Fast access time: 120ns (max.)


    OCR Scan     		PDF ib4142 8/256K 144x18 120ns 40-pin 23C4200A KM23C4200A 23C4200A)

    D1377

    Abstract: TCA 965 BP KM424C256A
    Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)


    OCR Scan     		PDF 0G13771 KM424C256A KM424C256A 256Kx4 28-PIN D1377 TCA 965 BP

    tl527

    Abstract: 741i NCN30
    Text: Advance Information KM 29V64000T/R FLASH M EM O RY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The K M 29V 64000T /R is a 8 M 8 ,38 8 ,6 0 8 x8 bit N A N D • O rganization Plash m em ory w ith a sp a re 2 5 6 K (2 6 2 ,1 4 4 )x 8 bit.


    OCR Scan     		PDF KM29V64000T/R 200us tl527 741i NCN30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718BV87 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support zero wait


    OCR Scan     		PDF 64Kx18 KM718BV87 18-Bit KM718BV87 486/Pentium

    km416c254b

    Abstract: No abstract text available
    Text: KM416C254B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC KM416C254B/BL7BLL-5 50ns 17ns 90ns 20ns KM416C254B/BL7BLL-6 60ns 17ns 110ns 24ns KM416C254B/BL/BLL-7 70ns


    OCR Scan     		PDF KM416C254B/BL/BLL KM416C254B/BL7BLL-5 KM416C254B/BL7BLL-6 110ns KM416C254B/BL/BLL-7 130ns cycle/64ms 00n02T km416c254b

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 200mA KM68B4002J-12 195mA KM68B4002J-15 190mA KM68B4002J 36-SOJ-4QO KM68B4002

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C224AJ KMM364C224AJ Fast Page Mode 2M x64 DRAM DIMM, based on 1M x 16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KMM364C224AJ is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C224AJ 1024 cycles/16ms, SOJ


    OCR Scan     		PDF KMM364C224AJ KMM364C224AJ cycles/16ms, x16bit 42-pin 48pin 168-pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E » • 7 ^ 4 1 4 2 QG1DSQ7 7 E3SMGK KMM536512B DRAM MODULES i 5 1 2 K X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M 536512B- 7 • • • • • • • tR A C tC A C tR C 130ns 70ns


    OCR Scan     		PDF KMM536512B 536512B- 130ns KMM53651 150ns 2B-10 536512B 20-pin

    Untitled

    Abstract: No abstract text available
    Text: K S57C 3016 4-BIT CMOS Microcontroller ELEC TR ONIC S Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD


    OCR Scan     		PDF KS57C3016 up-to-16-digit 100-pin KS57C3016â D02fei73Q 71b4142 002b731

    IRFP231

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E » • 7^1=4142 G0121ÛS ST1 ■ SM6 K IRF630/631/632/633 IRFP230/231Z232/233 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s ON Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF G0121Ã IRF630/631/632/633 IRFP230/231Z232/233 O-220 /IRFP231 IRFP230/231/232/233 ib414E IRFP231

    KSR1002

    Abstract: KSR2002 74115
    Text: S A M S U N G SEMICONDUCTOR INC mE KSR2002 D 7Tb4142 □ 00706*1 0 | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T-37- >3 (Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Reslstor(R, = 10Kff, R, = 10KÍ1)


    OCR Scan     		PDF 0070fl KSR2002 10Kil) KSR1002 KSR1002 74115

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS_ÌNC KM75C.101A _42E 3 • .T ^ b M m B D O l lSB? T H i S H G K CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 5 1 2 X 9 FIFO FEATURES DESCRIPTION • • • ' • . • The 75G101A is a 512X 9 dual port memory that im­ plements a special First-in-First-Out FIFO) algorithm that


    OCR Scan     		PDF KM75C --30ns 75G101A 32-Pin G0112S0 KM75C101A