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    CI 116H Search Results

    CI 116H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2116H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak Visit Renesas Electronics Corporation
    69190-116HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Single Row, 16 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    78548-116HLF Amphenol Communications Solutions 78548-116HLF-B/S II HDR DR SELF-RET Visit Amphenol Communications Solutions
    95687-116HLF Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Double Row, 16 Positions, 2.54 mm Pitch, Vertical, 9.14 mm (0.36in) Mating, 9.14 mm (0.36in) Tail. Visit Amphenol Communications Solutions
    68764-116HLF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled Header, Through Hole, Single Row, 16 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions

    CI 116H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    laf 0001

    Abstract: ic laf 0001 laf 0001 power 0158h testing motherboards using multi meter 10BASE2 10BASE5 CDK8920A CS8920 CS8920A
    Text: CS8920A Advanced Product Databook &U\VWDO /$1TM ISA FEATURES Plug-and-Play Ethernet Controller • Single-Chip IEEE 802.3 Ethernet Controller with Direct ISA-Bus Interface ■ Implements Industry-Standard Plug and Play ■ Full Duplex Operation DESCRIPTION


    Original     		PDF CS8920A 10BASE-T 10BASE2, 10BASE5 10BASE-F 0144h) 0146h) CS8920A DS238PP2 laf 0001 ic laf 0001 laf 0001 power 0158h testing motherboards using multi meter 10BASE2 CDK8920A CS8920

    3G3JV-AB007

    Abstract: 3G3JV-AB004 3G3JV-AB015 3G3JV-A4007 3G3JV-A2007 3G3JV-A4004 A4040 3G3JV-AB007 fr 3g3jv inverter 3G3JV-AB002
    Text: Falownik 3G3JV Wiadomoœci ogólne Falownik 3G3JV jest miniaturowym przetwornikiem czêstotliwoœci z szerokimi mo¿liwoœciami parametryzacji przez u¿ytkownika. Unikalne rozwi¹zanie sekcji zasilaj¹cej powoduje, ¿e wymiary falownika zosta³y ograniczone do minimum.


    Original     		PDF RS422A, 3G3JV-AB007 3G3JV-AB004 3G3JV-AB015 3G3JV-A4007 3G3JV-A2007 3G3JV-A4004 A4040 3G3JV-AB007 fr 3g3jv inverter 3G3JV-AB002

    laf 0001

    Abstract: ic laf 0001 laf 0001 power center tap transformer 10BASE2 10BASE5 10BASET CDK8920 CS8920 CS8920-CQ
    Text: CS8920 ISA Plug-and-Play Ethernet Controller Features Description • Single-Chip IEEE 802.3 Ethernet Controller with • • • • • • • • • • • • Direct ISA-Bus Interface Implements Industry-Standard Plug and Play Full Duplex Operation


    Original     		PDF CS8920 10BASE-T 10BASE2, 10BASE5 10BASE-F 0144h) 0146h) CS8920 DS150PP1 laf 0001 ic laf 0001 laf 0001 power center tap transformer 10BASE2 10BASET CDK8920 CS8920-CQ

    M58LT128HSB

    Abstract: CR10 M58LT128HST
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB TBGA64 M58LT128HSB CR10 M58LT128HST

    CR10

    Abstract: M58LT128HSB M58LT128HST
    Text: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB 128-Mbit TBGA64 CR10 M58LT128HSB M58LT128HST

    Untitled

    Abstract: No abstract text available
    Text: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128KST M58LT128KSB

    CR10

    Abstract: M58LT256JSB M58LT256JST
    Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256JST M58LT256JSB TBGA64 CR10 M58LT256JSB M58LT256JST

    Untitled

    Abstract: No abstract text available
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB TBGA64 M58LT128HSB8ZA6 M58LT128HSB8ZA6E \TEMP\SGST\M58LT128HSB8ZA6 20-Aug-2007

    Untitled

    Abstract: No abstract text available
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB M58LT128HST8ZA6 M58LT128HST8ZA6E

    CR10

    Abstract: M58LT128HSB M58LT128HST
    Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HST M58LT128HSB TBGA64 CR10 M58LT128HSB M58LT128HST

    Untitled

    Abstract: No abstract text available
    Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0R8000T2 M30L0R8000B2

    Untitled

    Abstract: No abstract text available
    Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256JST M58LT256JSB

    Untitled

    Abstract: No abstract text available
    Text: M30L0T8000T2 M30L0T8000B2 256 Mbit 16 Mb x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0T8000T2 M30L0T8000B2

    M58LT256KST

    Abstract: M58LT256KSB
    Text: M58LT256KST M58LT256KSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256KST M58LT256KSB M58LT256KSB

    M58LT256JSB

    Abstract: CR10 M58LT256JST M58LT256JSB8
    Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT256JST M58LT256JSB TBGA64 M58LT256JSB CR10 M58LT256JST M58LT256JSB8

    M58LR128HC

    Abstract: M58LR128HD VFBGA44 CR10 882F
    Text: M58LR128HC M58LR128HD 128 Mbit x16, Mux I/O, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HC M58LR128HD VFBGA44 M58LR128HC M58LR128HD VFBGA44 CR10 882F

    M58LRxxxKC

    Abstract: No abstract text available
    Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LRxxxKC

    CR10

    Abstract: 4047N
    Text: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		PDF M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    BP 109

    Abstract: CR10 M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB BP 109 CR10 M58LR128HB M58LR128HT VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB M58LR128HB85ZB5F M58LR128HB

    M58LT128HB

    Abstract: M58LT128HT CR10 VFBGA56 026h
    Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LT128HT M58LT128HB VFBGA56 M58LT128HB M58LT128HT CR10 VFBGA56 026h