lM 3160
Abstract: MCPD 3000 cd4500 0411 02 027 000 6600K uv photometer design
Text: Preliminary GM5SAExxP0A Series GM5SAExxP0A (Series) Light Emitting Diode • Features ■ Agency Approvals/Compliance 1. Single-chip device, the given output at IF = 20 mA 2. White Color, high color rendering (achieved via Blue LED chip in combination with red and green
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GM5SAE65P0A
GM5SAE57P0A
GM5SAE50P0A
GM5SAE45P0A
GM5SAE40P0A
GM5SAE35P0A
GM5SAE30P0A
GM5SAE27P0A
DG-091008
lM 3160
MCPD 3000
cd4500
0411 02 027 000
6600K
uv photometer design
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IS02859
Abstract: No abstract text available
Text: Preliminary GM5BW97331A GM5BW97331A Light Emitting Diode • Features ■ Agency Approvals/Compliance 1. 3-chip device, the given output at IF = 20 mA/chip 2. White Color achieved via InGaN Blue LED chips in combination with Yellow Phosphor 3. Other parts in this family:
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GM5BW97331A
GM5BW97330A
GM5BW97331A
GM5BW97332A
GM5BW97333A
IS02859
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p14115
Abstract: NV6510ST P14115EJ1V0DS00
Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NV6510ST,NV6510SU 10 mW, 655 nm VISIBLE LASER DIODE HIGH OUTPUT POWER AND LOW CURRENT DESCRIPTION The NV6510ST and NV6510SU are AlGaInP 650 nm visible laser diodes and especially developed for DVD applications. The newly developed Multiple Quantum Well MQW LD chip, can achieve low operating current, high
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NV6510ST
NV6510SU
NV6510SU
p14115
P14115EJ1V0DS00
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Untitled
Abstract: No abstract text available
Text: GM5BW96380A GM5BW96380A Light Emitting Diode • Features ■ Agency Approvals/Compliance 1. High brightness 2450 mcd @ IF = 20 mA 2. White Color (achieved via InGaN Blue LED chip in combination with Yellow Phosphor) 1. RoHS compliant ■ Applications 1.
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GM5BW96380A
DG-06Y003A
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GM5BW96385A
Abstract: No abstract text available
Text: GM5BW96385A GM5BW96385A Light Emitting Diode • Features ■ Agency Approvals/Compliance 1. High brightness 2300 mcd @ IF = 20 mA 2. White Color (achieved via InGaN Blue LED chip in combination with Yellow Phosphor) 3. Similar part to GM5BW96380A, but includes selfprotection against static electricity
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GM5BW96385A
GM5BW96380A,
DG-0089001
GM5BW96385A
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Senju M705 solder bar
Abstract: Senju ESR-250
Text: Doc. No. DG-097016A ISSUED November 27, 2009 Refe LED DIVISION ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION 仕様書 SPECIFICATIONS チップ LED 品名 Product name 形名 Model No. CHIP LIGHT EMITTING DIODE GM2BB40BM0C 電子デバイス事業本部
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DG-097016A
GM2BB40BM0C
GM2BB40BM0C
DG-097016A
Senju M705 solder bar
Senju ESR-250
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gm2bb50bm0c
Abstract: Senju M705-221BM5-42-11 zener diode color codes Solder bar of Senju M705
Text: Doc. No. DG-097015A ISSUED November 27, 2009 LED DIVISION ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION 仕様書 SPECIFICATIONS チップ LED 品名 Product name 形名 Model No. CHIP LIGHT EMITTING DIODE GM2BB50BM0C 電子デバイス事業本部
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DG-097015A
GM2BB50BM0C
GM2BB50BM0C
DG-097015A
Senju M705-221BM5-42-11
zener diode color codes
Solder bar of Senju M705
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solder paste m705
Abstract: Senju M705 solder bar Senju M705 safety M705-221BM5-42-11 senju m705 solder paste M705
Text: Doc. No. DG-097017A ISSUED November 27, 2009 Refe LED DIVISION ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION 仕様書 SPECIFICATIONS チップ LED 品名 Product name 形名 Model No. CHIP LIGHT EMITTING DIODE GM2BB30BM0C 電子デバイス事業本部
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DG-097017A
GM2BB30BM0C
GM2BB30BM0C
DG-097017A
solder paste m705
Senju M705 solder bar
Senju M705 safety
M705-221BM5-42-11
senju m705 solder paste
M705
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PS9711
Abstract: PS9711-E3 PS9711-E4 PS9711-F3 PS9711-F4
Text: DATA SHEET PHOTOCOUPLER PS9711 HIGH NOISE REDUCTION HIGH-SPEED DIGITAL OUTPUT TYPE −NEPOC Series− 5-PIN SOP PHOTOCOUPLER TM DESCRIPTION The PS9711 is an optically coupled isolator containing a GaAlAs LED on light emitting diode input and a photodiode and a signal processing circuit on light receiving side (output side) on one chip.
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PS9711
PS9711
PS9711-E3,
PS9711-F3,
PS9711-E3
PS9711-E4
PS9711-F3
PS9711-F4
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS9711 HIGH NOISE REDUCTION HIGH-SPEED DIGITAL OUTPUT TYPE −NEPOC Series− 5-PIN SOP PHOTOCOUPLER TM DESCRIPTION The PS9711 is an optically coupled isolator containing a GaAlAs LED on light emitting diode input and a photodiode and a signal processing circuit on light receiving side (output side) on one chip.
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PS9711
PS9711
PS9711-E3,
PS9711-F3,
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Untitled
Abstract: No abstract text available
Text: 70-W206NBA600SA-M788L flowBOOST 4w 600V/600A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications
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70-W206NBA600SA-M788L
00V/600A
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Untitled
Abstract: No abstract text available
Text: 70-W206NBA400SA-M786L flowBOOST 4w 600V/400A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications
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70-W206NBA400SA-M786L
00V/400A
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Untitled
Abstract: No abstract text available
Text: 10-FY12M3A040SH-M749F08 10-F112M3A040SH-M749F09 flow3xMNPC 1 1200V/40A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications
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10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
200V/40A
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Untitled
Abstract: No abstract text available
Text: 10-F112M3A025SH-M746F09 10-FY12M3A025SH-M746F08 datasheet flow3xMNPC 1 1200V/25A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications
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10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
200V/25A
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Untitled
Abstract: No abstract text available
Text: Tantalum Chip Capacitors SpeedPower ll, Low ESR Ordering code: Date: B45006B157*M707 July 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B45006B157
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diode D07-15
Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification
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1N251
1N252
1N461
1N625
1N62G
1N814
1N903
1N903A
1N904
1N914
diode D07-15
diode d07
1N3605
DIODE 1N4087
1N9148
2N2222 chip
1N4532
D07 15
DIODE 1N3605
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PNP Transistor 2N2222 equivalent
Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510
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1N914
1N914A
1N914B
M46P-X510
1N3064
M46P-X507
1N3600
1N3605
M46P-X516
1N4150
PNP Transistor 2N2222 equivalent
DIODE 1N3605
2N2907 equivalent
equivalent transistor 2N2222
2n2222 npn transistor general purpose
1N3605 equivalent
2N2222 npn small signal current gain
2N2222 chip
DIODE 1N9148
transistor npn high speed switching
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Untitled
Abstract: No abstract text available
Text: TOX 9003 Gallium Aluminum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation. • • •
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G00D524
IH375)
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Untitled
Abstract: No abstract text available
Text: TIES16A Gallium Arsenide Infrared-Emitting Diode |f W Ê W KêJÊ Texas O ptoelectronics, Inc. DESIGNED TO EMIT NEAR-INFRARED RADIENT ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip
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TIES16A
72-Mil-Diameter
G00D524
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Untitled
Abstract: No abstract text available
Text: 6R1TI30Y-080 y 4 TS . y y ' f a 9 ? ^ ± y < r7 - ;e i > 3 . - u u — — DIODE and TYRISTOR MODULE • ¡ftft : Features • 13=7 X ' • a 7 Glass Passivation Chip Easy Connection • Jfeliffi Insulated Type • d i/d tiM # ^ £ Large d i/d t • d v /d tifiift* '1
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6R1TI30Y-080
I95t/R89
5t1150
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3160-FH
Abstract: LDR1101 2885 light emission diodes LR 3160 LDG5171 S53S E7500 GLB2885 OLB2685 YLB2785
Text: SIEMENS AKTIEN6ESELL SCHAF M7E D • S23SbDS 002710T b « S I E G SIEM EN S SUPER-RED YELLOW GREEN OLB 2685 YLB 2785 GLB 2885 UGHTBARS Package Dimensions in Inches mm r PiN FUNCTION 80 (ZO 32) MAX. Anode b 1 40 ( 1015 ) (8 89} MAX Canea*t> Gatoder UMIC ArodeS
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6235bOS
YLB2785
2685/YLB
2785/GLB
3160-FH
LDR1101
2885 light emission diodes
LR 3160
LDG5171
S53S
E7500
GLB2885
OLB2685
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SFH 910
Abstract: k 4111 K SFH 910 SFH 705
Text: SIEMENS AKTIENGESELLSCHAF M7E D ñ23SbQS 0DB73Ô2 2 « S I E G S IE M E N S SFH435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE * Package: Special Case, G rey Tinted Epoxy Resin, Solder Tabs, 2.54 mm Via" Lead Spacing * Cathode M arking: Short Solder Tab
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fi235bOS
023SbGS
GG273flM
T-41-11
SFH 910
k 4111
K SFH 910
SFH 705
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SFH485-2
Abstract: IR001 SFH485-1 SFH485-3 ir touch sfh siemens
Text: SIEMENS AKTIENGESELLSCHAF M7E » • 6E3SbOS 00273=13 7 « S I E G S IE M E N S SFH4Ô5 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm 024 (0 6) 016 (0 4} Cathode Chip Position Maximum Ratings FEATURES • Radiant Intensity Selections SFH485-1 16-32
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SFH485-1
SFH485-2
SFH485-3
T13/4
100hS)
IR001
SFH485-3
ir touch
sfh siemens
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I HIGH SPEED CMOS M 74H C 138P /FP /D P l-O F -8 D EC O D E R /D E M U L T IP L E X E R DESCRIPTION The M74HC138 is a semiconductor integrated circuit con sisting of a 3-bit binary to 8-line decoder/dem ultiplexer with chip select inputs.
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M74HC138
74LSTTL
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