Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT ADVANCE INFORMATION IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • Equal access and cycle times — Military: 20/25ns — Commercial: 15/17ns • One Chip Select plus one Output Enable pin
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IDT71028
20/25ns
15/17ns
28-pin
MIL-STD-883,
IDT71028
576-bit
200mV
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LV25616
Abstract: Z639 IS61LV25616 LV2561 IZ21
Text: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation — 60 mW typical operating — 6 |^W (typical) CMOS standby • TTL compatible interface levels
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IS61LV25616
44-pin
ISSIIS61LV25616
304-bit
SR040-0A
LV25616
Z639
IS61LV25616
LV2561
IZ21
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100E111
Abstract: MC100LVE111
Text: 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER w /o ENABLE SYNERGY C'°<' ^ ork SY100E111A/L SEMICONDUCTOR DESCRIPTION FEATURES 3.3V and 5V power supply options 200ps part-to-part skew 50ps output-to-output skew Differential design V bb output Voltage and temperature compensated outputs
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200ps
MC100LVE111
J28-1
SY100E111AJCTR
SY10E111
SY10E111AJITR
SY100E111
100E111
MC100LVE111
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Untitled
Abstract: No abstract text available
Text: AT29LV010 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and W rite Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 iA CMOS Standby Current Fast Read Access Time - 200 ns
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AT29LV010
10-Year
AT29LV010-20DI
AT29LV010-20JI
AT29LV010-20PI
AT29LV010-25DC
AT29LV010-25JC
AT29LV010-25
AT29LV010-25TC
AT29LV010-25DI
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AT28C64
Abstract: 28C64 AT28C64-15 AT28C64-20 AT28C64X 5962-87514
Text: ATMEL CORP 43E D • h i UÊ l D ? m ? 7 D0G1SS4 2 [ATM AT28C64 ii T - V 6 -/3 - 2 7 Features • Fast Bead A c ce ss Tim e -150ns • Fast Byte Write - 200ns or 1 m s • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer
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00G1S54
AT28C64
Time-150ns
200ns
T-V6-/3-27
Military/883C
Milltary/883C
AT28C64/X
28C64
AT28C64-15
AT28C64-20
AT28C64X
5962-87514
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C6416
Abstract: IS61C6416 MAJJ IS61C ISSI
Text: ISSI IS 6 1 C 6 4 1 6 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 jjA/V (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply
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is61c6416
44-pin
IS61C6416
576-bit
sr005-1a
C6416
MAJJ
IS61C ISSI
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IS61LV12824
Abstract: No abstract text available
Text: ISSI’ IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY a d v a n c e in f o r m a t io n S E P T E M B E R 1998 FEATURES DESCRIPTION • The lS S I IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated usingISSI's high
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IS61LV12824
119-pin
100-pin
SYIS61
LV12824
IS61LV12824-1
IS61LV12824-12B
IS61LV12824-12TQ
IS61LV12824-15B
IS61LV12824
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