Untitled
Abstract: No abstract text available
Text: Fast track your design with NXP’s high-speed converters nxp converters 6.7_939775016925.indd 1 18/06/10 16:29 A tradition of innovation With billions of high-performance RF, analog, power and digital processing ICs shipping annually, NXP is a worldwide leader in mixed-signal and standard product solutions. And
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30pf variable capacitor
Abstract: 5 - 30pf variable capacitor
Text: NJU6343 PRELIMINARY 50MHz VCXO IC •GENERAL DESCRIPTION The NJU6343 is VCXO IC up to 50MHz, which consists of an oscillation amplifier, internal variable capacitor, divider, and 3-state output buffer. The pull range is ±100ppm to use internal variable capacitor only, depend on the external crystal
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NJU6343
50MHz
NJU6343
50MHz,
100ppm
20MHz,
21MHz,
30pf variable capacitor
5 - 30pf variable capacitor
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VARIABLE capacitor
Abstract: 5 - 30pf variable capacitor 30pf variable capacitor NJU6343 NJU6343AC-D
Text: NJU6343 PRELIMINARY 50MHz VCXO IC •GENERAL DESCRIPTION The NJU6343 is VCXO IC up to 50MHz, which consists of an oscillation amplifier, internal variable capacitor, divider, and 3-state output buffer. The pull range is ±100ppm to use internal variable capacitor only, depend on the external crystal
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NJU6343
50MHz
NJU6343
50MHz,
100ppm
50MHz
100ppm
21MHz,
VARIABLE capacitor
5 - 30pf variable capacitor
30pf variable capacitor
NJU6343AC-D
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Untitled
Abstract: No abstract text available
Text: NXP’s CGVxpress JESD204B-compliant interface technology Enhanced ease-of-use with CGVxpress NXP’s CGVxpress implementation of the JEDEC JESD204B digital interface provides higher bandwidth, deterministic latency, and harmonic clocking for wireless infrastructure, ISM, and
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JESD204B-compliant
JESD204B
DAC1628D1G25
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CGV 50
Abstract: NJU6343 NJU6343AC-D R1131
Text: NJU6343 暫定仕様 50MHz VCXO 用 IC •概 要 NJU6343 は最大 50MHz までの周波数に対し、±100ppm の可変幅を持つワンチップ（バリキャップダイオード内蔵） VCXO 用 IC です。発振用アンプの入出力には、コンデンサが
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NJU6343
50MHz
50MHz
100ppm
NJU6343AC-D
23/23pF
CGV 50
NJU6343
NJU6343AC-D
R1131
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R_10024
Abstract: Avateq, NXP and Xilinx join to meet design challenge
Text: Avateq, NXP and Xilinx join to meet design challenge digital broadcast repeater Rev. 2 — 11 April 2012 White paper Document information Info Content Author s Alex Babakhanov – Director of Marketing, Avateq Corporation; Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors
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HVQFN64
Abstract: HVQFN40 ADC1410S ADC1215S ADC1215S065 ADC1215S080 ADC1215S105 ADC1215S125 ADC1410S065 ADC1410S080
Text: Type Related demoboard Description ADC1215S series ADC1215S065/DB ADC1215S065 demo board; both CMOS and LVDS ADC1215S080/DB ADC1215S080 demo board; both CMOS and LVDS ADC1215S105/DB ADC1215S105 demo board; both CMOS and LVDS ADC1215S125/DB ADC1215S125 demo board; both CMOS and LVDS
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ADC1215S
ADC1215S065/DB
ADC1215S065
ADC1215S080/DB
ADC1215S080
ADC1215S105/DB
ADC1215S105
ADC1215S125/DB
ADC1215S125
ADC1410S065/DB
HVQFN64
HVQFN40
ADC1410S
ADC1410S065
ADC1410S080
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Untitled
Abstract: No abstract text available
Text: NXP high-speed ADC/ DAC selection guide Best-in-class ADCs & DACs Available with three different data interfaces including JESD204A/JESD204B , our high-speed ADC/DAC solutions deliver best-in-class performance, size, and functional integration. High-speed single- and dual-channel ADCs
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JESD204A/JESD204B)
JESD204A,
JESD204B
voltag628D1G25
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samtec connector
Abstract: ADC0808D250 ADC0808D ADC1415S080 LVDS connector ADC1010S080 HVQFN64 DEMO
Text: Type Related demoboard Description ADC1207S080 ADC1207S080/DB ADC1207S080 demo board ADC1210S series ADC1210S065/DB ADC1210S065 demo board; both CMOS and LVDS ADC1210S065F1/DB ADC1210S065 demo board; CMOS version; SPI, Regulators and CMOS buffer on board ADC1210S065F2/DB
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ADC1207S080
ADC1207S080/DB
ADC1207S080
ADC1210S
ADC1210S065/DB
ADC1210S065
ADC1210S065F1/DB
ADC1210S065F2/DB
ADC1413D125
samtec connector
ADC0808D250
ADC0808D
ADC1415S080
LVDS connector
ADC1010S080
HVQFN64
DEMO
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virtex5
Abstract: AN10830 convertisseur dc dc ADC1113D ADC1113D125 ADC1213S ADC1413S DAC1408D750 JESD204A
Text: AN10830 Interconnection between JESD204A compliant devices Rev. 2 — 23 September 2010 Application note Document information Info Content Keywords JESD204A, Data converters, CML, LVDS, Jitter, Coupling Abstract This document describes the interconnections that are required between
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AN10830
JESD204A
JESD204A,
virtex5
AN10830
convertisseur dc dc
ADC1113D
ADC1113D125
ADC1213S
ADC1413S
DAC1408D750
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tpw 723
Abstract: ACPL-33XJ ACPL-333J AV02-1940EN
Text: ACPL-333J/332J/331J/330J Managing Very Narrow Input Pulse Width Application Condition with Simple RC Circuit for Highly Integrated Gate Driver Optocouplers Application Note 5430 Introduction The Non-Overlapping Effect The ACPL-333J/332J/331J/330J are advanced 1.5A to
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ACPL-333J/332J/331J/330J
ACPL-333J/332J/331J/330J
ACPL-33XJ
AV02-1940EN
tpw 723
ACPL-333J
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QUBiC4X
Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers
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12x12
LQFP48
QUBiC4X
BGX7300
power amplifier NXP BLF7G20LS-90P
BGA7202
printed antenna dcs 1800
BLP7G10S-140P
BLF578XR
qubic4
BGU705
Thin Film Resistors SiCr
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KV1225
Abstract: KV1235Z KV1226
Text: DIODES TO K O 22 Y Variable Capacitance Diodes Application For AM Layout 3 element C iv: 5 1 0 -6 2 0 2 element C 25v :16~26 Capacitance ratio A C Max. Package 200 3°/o * 3 CB-3-6 1V, 1MHz 2% * 3 CB-2-4 CB-1-2 KV1225 Tun. KV1226 Tun. KV1230Z VCO 1 element
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KV1225
KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1260
KV1260-2
KV1260M
KV1280-1
KV1225
KV1235Z
KV1226
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1300313
Abstract: JE 13003
Text: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)
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1SV100
a55MAX.
1300313
JE 13003
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1SV149
Abstract: No abstract text available
Text: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation
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1SV149
1SV149
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1SV100
Abstract: Ta 8135 1300313 11213-1 96709
Text: b7 {DISCRETE/OPTO} 9097250 TOSHIBA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 0 9355 ; D " Silicon EpitaxiaL Planar Type 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in m m 4 .2 MAX. FEATURES: . High Capacitance Ratio
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1SV100
a55MAX.
1SV100-â
1SV100
Ta 8135
1300313
11213-1
96709
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CS 5609
Abstract: 1sv149 st 9618 1SV149-C SB 8712
Text: 1SV 149 TOSHIBA SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C iy/C 8V = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V a 5 5 MAX. CHARACTERISTIC Reverse Voltage
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1SV149
CS 5609
1sv149
st 9618
1SV149-C
SB 8712
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KV1226
Abstract: KV1236Z KV1235Z KV1225 KV1236 KV1320 KV1260 KV1235 KV1310 KV1330A-2
Text: TOKO AMERICA INC D E .J cIDt>7Li32 □ 1 4 34 } VARjABLE^CAPACLTANCE^DiODES. — ' 9 0 6 7 6 3 2 T O K O A M E R I C A INC Variable Capacitance Diodes for AM KV1250 KV1260 • # KV1260-2 <* KV1230Z KV1235Z KV1234Z KV1236Z KV1225 KV1226 ♦ ■ KV1260M KV1560
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7Li32
KV1250
KV1260
KV1260-2
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1225
KV1226
KV1226
KV1236Z
KV1235Z
KV1225
KV1236
KV1320
KV1260
KV1235
KV1310
KV1330A-2
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KV1226
Abstract: KV1371NT KV1235Z KV1320 1235Z KV1290A-3 1236Z kv1236 V1420 KV1236Z
Text: TOKO AMERICA INC •5 v m m ?b3g poonsq 13a DIODES • t a i ' ^ Q ' I ^ 1^ TO K O K Variable Capacitance Diodes Application For AM,* FM, UHF AM F M U H F l i g â T f t l ^ - f ^ - K f f l i ÉSU- K • KV1235Z KV1236Z • KV1260 • KV1260-2 KV1280 Diodes
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KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1260
KV1260-2
KV1280
KV1280-2
KV1281
KV1371NT
KV1320
1235Z
KV1290A-3
1236Z
kv1236
V1420
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8479F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8479F 3 PHASE FULL W A V E BRUSHLESS DC M O TO R DRIVER IC FOR VIDEO CAM ERA TA8479F is a capstan/cylinder motor 1-chip driver IC for video camera. Enclosing the capstan and cylinder sections
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TA8479F
TA8479F
QFP44
QFP44-P-1414-0
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en2617b
Abstract: No abstract text available
Text: Ordering number:EN2617B _ SVC342 Diffused Junction Type Silicon Diode V aractor Diode for AM Receiver Electronic T uning Use Features •Twin type varactor diode for low-voltage A M electronic tuning use. •High capacitance ratio. •Excellent linearity of C-V characteristic.
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EN2617B
SVC342
en2617b
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A1271 Y
Abstract: A1271 EPCOS 800 410 O k a1271 A-1271 K 411 a1271
Text: Infineon 1« c h n c i c £ i 6 ì GaAs MMIC CGY121 B Data Sheet • • • • • • • Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50 dB Positive Control Voltage 50 £1 input and output matched Low power consumption
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CGY121
Q62702-G0071
54102-A1120-J60
EHT08630
A1271 Y
A1271
EPCOS 800 410 O
k a1271
A-1271
K 411 a1271
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN2618B _ SVC341 Diffused Junction Type Silicon Diode Varactor Diode for AM Receiver Electronic Tuning U se F eatu res • Twin type varactor diode for low-voltage AM electronic tuning use. •High capacitance ratio. ■Excellent linearity of C-V characteristic.
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EN2618B
SVC341
SVC341-applied
SVC341
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3040B
Abstract: No abstract text available
Text: O rd e rin g num ber:E N 3040B NO.3040B II SVC353 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning U se F eatures • Excellent matching characteristics because of composite type. • The number of manufacturing processes can be reduced and automatic mounting is possible because of
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3040B
SVC353
SVC353
3040B
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