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    CGS RESISTOR C7 Search Results

    CGS RESISTOR C7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    KA4F3R(0)-T1-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    HD1A3M(0)-T1-AZ Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    CGS RESISTOR C7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CRCW1206100RF

    Abstract: NCP102 VJ0603Y101KXXA ESMG250ELL AND8037 TP015 vishay resistor HP6N136 NTD40N03R TP10
    Text: AND8303/D Generating a 1.2 V Voltage Supply using the NCP102 Voltage Regulator Prepared by: Juan Carlos Pastrana ON Semiconductor http://onsemi.com INTRODUCTION The minimum output voltage is limited by the voltage reference. The pass transistor is selected to achieve the


    Original     		PDF AND8303/D NCP102 NCP102 CRCW1206100RF VJ0603Y101KXXA ESMG250ELL AND8037 TP015 vishay resistor HP6N136 NTD40N03R TP10

    cgs resistor c7

    Abstract: CGS C14 cgs resistor c14 Meggitt CGS 1 R/cgs resistor c7 CGS 1R0
    Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors TYPE C SERIES Meggitt CGS has manufactured the 'C' Series of Vitreous Enamelled Wirewound Resistors for more than


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either


    Original     		PDF ISL6113, ISL6114 FN6457 ISL6114 5m-1994.

    IRZ 40

    Abstract: pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112 ISL6114
    Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either


    Original     		PDF ISL6113, ISL6114 FN6457 ISL6114 5m-1994. IRZ 40 pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112

    IXAN0010

    Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD
    Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers


    Original     		PDF IXAN0010 D-68623; IXAN0010 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD

    capacitor siemens 4700 35

    Abstract: transister mosfet transister circuit PTF 101 tantulum capacitor G200 K1206 power transister data transistor k 425
    Text: PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor Description • • The PTF 10048 is an internally matched common source N-channel enhancement-mode lateral MOSFET specifically intended for WCDMA applications as well as other large signal amplifier applications


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF capacitor siemens 4700 35 transister mosfet transister circuit PTF 101 tantulum capacitor G200 K1206 power transister data transistor k 425

    G200

    Abstract: K1206 103 smt resistor
    Text: PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF G200 K1206 103 smt resistor

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    k1206

    Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
    Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum


    Original     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF k1206 cgs resistor c7 A123 transistor l2 k1206 220 r3

    k1206

    Abstract: G200 LDMOS transistor 1W
    Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF k1206 G200 LDMOS transistor 1W

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182

    circuit diagram of 24V 20A SMPS

    Abstract: Charge Pumps
    Text: ISL6144 Data Sheet December 15, 2006 FN9131.2 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.


    Original     		PDF ISL6144 FN9131 ISL6144 circuit diagram of 24V 20A SMPS Charge Pumps

    48V SMPS

    Abstract: smps 10w 5V ISL6144 ISL6144IR ISL6144IV ISL6144IVZA MO-220 48vdc smps circuit diagram 48v smps led driver ISL6144IVZ
    Text: ISL6144 Data Sheet March 23, 2006 FN9131.1 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.


    Original     		PDF ISL6144 FN9131 ISL6144 48V SMPS smps 10w 5V ISL6144IR ISL6144IV ISL6144IVZA MO-220 48vdc smps circuit diagram 48v smps led driver ISL6144IVZ

    rf mosfet ericsson

    Abstract: k1206 cgs resistor c7
    Text: e PTF 10112 60 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    Original     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF rf mosfet ericsson k1206 cgs resistor c7

    REG IC 48V IN 12V 10A OUT ic

    Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
    Text: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144 REG IC 48V IN 12V 10A OUT ic smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144IRZA ISL6144IVZA

    48V SMPS

    Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
    Text: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144 48V SMPS smps 48v 12v ISL6144IV ISL6144IVZA MO-220 0805 resistor package

    REG IC 48V IN 12V 10A OUT

    Abstract: circuit diagram of mosfet based smps power supply 40A Adjustable Power Supply Schematic Diagram 48V SMPS schematic diagram 48v dc convertor 48vdc smps circuit diagram REG IC 48V 40A P channel MOSFET 10A schematic ac-dc converter mtbf 3.3V 1A 4W FN9131
    Text: ISL6144 Data Sheet November 3, 2009 FN9131.4 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144 REG IC 48V IN 12V 10A OUT circuit diagram of mosfet based smps power supply 40A Adjustable Power Supply Schematic Diagram 48V SMPS schematic diagram 48v dc convertor 48vdc smps circuit diagram REG IC 48V 40A P channel MOSFET 10A schematic ac-dc converter mtbf 3.3V 1A 4W

    Untitled

    Abstract: No abstract text available
    Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144

    fuse fall

    Abstract: 9V 1A smps
    Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144 fuse fall 9V 1A smps

    P4917-ND

    Abstract: PTF 10019 G200 10019
    Text: PTF 10019 70 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure


    Original     		PDF 34apacitor P4917-ND P5276 1-877-GOLDMOS 1301-PTF P4917-ND PTF 10019 G200 10019

    rf mosfet ericsson

    Abstract: 212-136 G200 K1206 mosfet 6 ghz PTF10035
    Text: PTF 10035 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10035 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output.


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF rf mosfet ericsson 212-136 G200 K1206 mosfet 6 ghz PTF10035

    capacitor 100uF 50V

    Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
    Text: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface


    Original     		PDF 0805CS-080 1-877-GOLDMOS 1522-PTF capacitor 100uF 50V resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY

    k1206

    Abstract: RF Transistor 1500 MHZ
    Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF RF Transistor 1500 MHZ

    10125

    Abstract: G200 K1206 rf mosfet ericsson
    Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF 10125 G200 K1206 rf mosfet ericsson