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    CGHV96 Search Results

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    CGHV96 Price and Stock

    MACOM CGHV96130F

    RF MOSFET HEMT 40V 440217
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96130F Tray 50 1
    • 1 $1164.79
    • 10 $1164.79
    • 100 $1164.79
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    Mouser Electronics CGHV96130F
    • 1 $806.53
    • 10 $794.03
    • 100 $794.03
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    Verical CGHV96130F 6 1
    • 1 $1743.2
    • 10 $1743.2
    • 100 $1743.2
    • 1000 $1743.2
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    Richardson RFPD CGHV96130F 6 1
    • 1 $1743.18
    • 10 $1743.18
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    MACOM CGHV96050F2

    RF MOSFET HEMT 40V 440210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F2 Tray 30 1
    • 1 $706.45
    • 10 $691.138
    • 100 $691.138
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    Mouser Electronics CGHV96050F2
    • 1 $786.85
    • 10 $786.84
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    Richardson RFPD CGHV96050F2 1
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    MACOM CGHV96050F1

    RF MOSFET HEMT 40V 440210
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    DigiKey CGHV96050F1 Tray 28 1
    • 1 $475.75
    • 10 $475.75
    • 100 $475.75
    • 1000 $475.75
    • 10000 $475.75
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    Mouser Electronics CGHV96050F1
    • 1 -
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    • 100 $484.76
    • 1000 $484.76
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    Verical CGHV96050F1 30 1
    • 1 $592.85
    • 10 $592.85
    • 100 $592.85
    • 1000 $592.85
    • 10000 $592.85
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    Richardson RFPD CGHV96050F1 30 1
    • 1 $395.21
    • 10 $395.21
    • 100 $395.21
    • 1000 $395.21
    • 10000 $395.21
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    MACOM CGHV96100F2-AMP

    CGHV96100F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96100F2-AMP Box 4 1
    • 1 $1378.61
    • 10 $1378.61
    • 100 $1378.61
    • 1000 $1378.61
    • 10000 $1378.61
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    Richardson RFPD CGHV96100F2-AMP 1
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    MACOM CGHV96130F-AMP

    RF MOSFET HEMT 40V 440217
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96130F-AMP Bulk 2 1
    • 1 $1475.38
    • 10 $1475.38
    • 100 $1475.38
    • 1000 $1475.38
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    Richardson RFPD CGHV96130F-AMP 1
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    Find more CGHV96 price and stock on Findchips.com

    CGHV96 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV96050F1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210 Original PDF
    CGHV96050F1-AMP Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF
    CGHV96050F1-AMP Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF
    CGHV96050F1-TB Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050 Original PDF
    CGHV96050F2 Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W Original PDF
    CGHV96050F2-AMP Wolfspeed CGHV96050F2 DEV BOARD WITH HEMT Original PDF
    CGHV96050F2-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2 Original PDF
    CGHV96100F2 Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W Original PDF
    CGHV96100F2-AMP Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF
    CGHV96100F2-AMP Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF
    CGHV96100F2-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2 Original PDF
    CGHV96130F Wolfspeed 100W GAN HEMT 7.9-9.6GHZ 50-OHM Original PDF
    CGHV96130F-AMP Wolfspeed 8.4-9.6GHZ, AMP W/ CGHV96100F2 Original PDF

    CGHV96 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96050F2

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1

    40VPulse

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    CGHV96050F2

    Abstract: CGHV96
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2

    CGHV96100F2

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96050F1

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96100F1

    Abstract: taconic
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic