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    CGHV14250 Search Results

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    CGHV14250 Price and Stock

    MACOM CGHV14250F

    RF MOSFET HEMT 50V 440162
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV14250F Tray 49 1
    • 1 $449.81
    • 10 $449.81
    • 100 $449.81
    • 1000 $449.81
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    Mouser Electronics CGHV14250F
    • 1 -
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    • 100 $458.35
    • 1000 $458.35
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    Richardson RFPD CGHV14250F 25
    • 1 -
    • 10 -
    • 100 $488.52
    • 1000 $488.52
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    MACOM CGHV14250P

    RF MOSFET HEMT 50V 440161
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    DigiKey CGHV14250P Tray 50
    • 1 -
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    • 100 $381.6124
    • 1000 $381.6124
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    Mouser Electronics CGHV14250P
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    • 100 $386.99
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    Richardson RFPD CGHV14250P 1
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    MACOM CGHV14250F-AMP

    EVAL BOARD FOR CGH40120F
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    DigiKey CGHV14250F-AMP Box 2
    • 1 -
    • 10 $1058.39
    • 100 $1058.39
    • 1000 $1058.39
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    Richardson RFPD CGHV14250F-AMP 1
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    MACOM CGHV14250F-TB

    CGHV14250F-TB
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    Verical CGHV14250F-TB 2 2
    • 1 -
    • 10 $666.7
    • 100 $666.7
    • 1000 $666.7
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    Richardson RFPD CGHV14250F-TB 2 1
    • 1 $400
    • 10 $400
    • 100 $400
    • 1000 $400
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    CGHV14250 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV14250F Cree RF FETs, Discrete Semiconductor Products, MOSFET RF Original PDF
    CGHV14250F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV14250 Original PDF
    CGHV14250P Wolfspeed 250W, GAN HEMT, 50V, 0.5-1.8GHZ, Original PDF
    CGHV14250P Wolfspeed 250W, GAN HEMT, 50V, 0.5-1.8GHZ, Original PDF

    CGHV14250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14250 CGHV14250 CGHV14 350anning,

    Untitled

    Abstract: No abstract text available
    Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14250 CGHV14250 CGHV14