CGH40010P Search Results

CGH40010P Price and Stock

Filter by Manufacturer


MACOM CGH40010P RF MOSFET HEMT 28V 440196
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40010P	Tray			250	1 - 10 - 100 - 1000 $65.225 10000 $65.225	Buy Now
Mouser Electronics	CGH40010P		174			1 $91.61 10 $83.63 100 $75.52 1000 $75.52 10000 $75.52	Buy Now
Richardson RFPD	CGH40010P				1	1 $125.41 10 $125.41 100 $125.41 1000 $125.41 10000 $125.41	Buy Now

CGH40010P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH40010P		Cree	RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196		Original	PDF

CGH40010P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
str w 6554 a Abstract: STR 6554 a Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a
Cree Microwave Abstract: No abstract text available Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave
STR W 5753 a Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
str w 6554 a Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808 Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808
CGH40010 Abstract: CGH40010F 10UF 470PF CGH40010-TB Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB
str 8656 Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 8627 8656 STR A 6169 10UF 470PF
CGH40010F Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22 Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22
CGH40010F Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	PDF	CGH40010 CGH40010 CGH40010, CGH40 40010P
CGH40025P Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors	Original	PDF