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    CGH3124 Search Results

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    CGH3124 Price and Stock

    MACOM CGH31240F

    RF MOSFET HEMT 28V 440201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH31240F Tray 61 1
    • 1 $651.3
    • 10 $632.088
    • 100 $632.088
    • 1000 $632.088
    • 10000 $632.088
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    Mouser Electronics CGH31240F 9
    • 1 $760.83
    • 10 $743.72
    • 100 $743.72
    • 1000 $743.72
    • 10000 $743.72
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    Richardson RFPD CGH31240F 7 1
    • 1 $883.98
    • 10 $883.98
    • 100 $883.98
    • 1000 $883.98
    • 10000 $883.98
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    CGH3124 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH31240F Wolfspeed 240W GAN HEMT 28V 2.7-3.1GHZ FET Original PDF
    CGH31240F Wolfspeed 240W GAN HEMT 28V 2.7-3.1GHZ FET Original PDF

    CGH3124 Datasheets Context Search

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    300 watts amplifier s-band 2.7-3.1GHz

    Abstract: CGH31240 ATC600F CGH31240F 300 watts amplifier s-band 20 watts transistor s-band 10UF ATC600S CGH3124 power transistor gan s-band
    Text: PRELIMINARY CGH31240F 240 W, 2700-3100 MHz, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for


    Original     		PDF CGH31240F CGH31240F CGH3124 300 watts amplifier s-band 2.7-3.1GHz CGH31240 ATC600F 300 watts amplifier s-band 20 watts transistor s-band 10UF ATC600S CGH3124 power transistor gan s-band

    Untitled

    Abstract: No abstract text available
    Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar


    Original     		PDF CGH31240F 50-ohm CGH31240F CGH3124

    Untitled

    Abstract: No abstract text available
    Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar


    Original     		PDF CGH31240F 50-ohm CGH31240F CGH3124 CGH31240F-TB

    CGH31240F

    Abstract: cgh31240
    Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar


    Original     		PDF CGH31240F 50-ohm CGH31240F CGH3124 CGH31240F-TB cgh31240

    CGH31240F

    Abstract: JESD22-C101-C 300 watts amplifier s-band CGH31240 CGH31240-TB A114D 300 watts amplifier s-band 2.7-3.1GHz cree rf CGH3124 CGH31240F-TB
    Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar


    Original     		PDF CGH31240F 50-ohm CGH31240F CGH3124 JESD22-C101-C 300 watts amplifier s-band CGH31240 CGH31240-TB A114D 300 watts amplifier s-band 2.7-3.1GHz cree rf CGH3124 CGH31240F-TB