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    cep830g

    Abstract: No abstract text available
    Text: CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP830G 500V 1.5Ω 5A 10V CEB830G 500V 1.5Ω 5A 10V CEF830G 500V 1.5Ω 5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP830G/CEB830G CEF830G CEP830G CEB830G O-263 O-220 O-220F O-220/263 cep830g