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    CEP603AL TRANSISTOR Search Results

    CEP603AL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CEP603AL TRANSISTOR Datasheets Context Search

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    cep603al

    Abstract: CEB603AL CEP603A Cep603al Transistor ceb603
    Text: CEP603AL/CEB603AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 25A , RDS ON =22m Ω @VGS=10V. RDS(ON)=40m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		PDF CEP603AL/CEB603AL O-220 O-263 cep603al CEB603AL CEP603A Cep603al Transistor ceb603

    cep603al

    Abstract: CEB603AL Cep603al Transistor CEP603A
    Text: CEP603AL/CEB603AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 2 5 A , R ds on =22 iti Q @ Vgs= 1 0V. @ Vgs=4.5V. R ds (ON)=40itiQ • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		PDF CEP603AL/CEB603AL 22itiQ 40itiQ O-220 O-263 to-263 to-220 cep603al CEB603AL Cep603al Transistor CEP603A