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    Abstract: No abstract text available
    Text: CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N5 500V 0.54Ω 12A 10V CEB12N5 500V 0.54Ω 12A 10V CEF12N5 500V 0.54Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).


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    PDF CEP12N5/CEB12N5 CEF12N5 CEP12N5 CEB12N5 O-263 O-220 O-220F O-220/263