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    CEC PNP TRANSISTOR Search Results

    CEC PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CEC PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCP869

    Abstract: marking chc BC869 BC869-16 BC869-25
    Text: BCP869 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCP869 is designed for application required for high current maximum -1 A and low voltage (maximum -20 V).


    Original     		PDF BCP869 BCP869 OT-89 -500mA -100mA -10mA, 100MHz BC869 BC869-16 BC869-25 marking chc BC869 BC869-16 BC869-25

    HDMI SWITCH SCHEMATIC

    Abstract: 1117 regulator PI3HDMI1210 eeprom schematic for tv resistor 15k BAW56 transistor RxSense hdmi type d 1.4 pcb layout schematic eeprom for tv usb 2.0 to hdmi circuit
    Text: 207 PI3HDMI1210 PI3HDMI1210 Demo Board Rev.A User Manual Introduction This user manual describes the components and the usage of PI3HDMI1210 demo Board Rev.A. Figure 1: Top View of PI3HDMI1210 Demo Board Figure 2: Bottom View of PI3HDMI1210 Demo Board Page 1 of 11


    Original     		PDF PI3HDMI1210 PI3HDMI1210 AN207 BAV70 HDMI SWITCH SCHEMATIC 1117 regulator eeprom schematic for tv resistor 15k BAW56 transistor RxSense hdmi type d 1.4 pcb layout schematic eeprom for tv usb 2.0 to hdmi circuit

    BC869

    Abstract: MARKING chc 1a50 BC869-16 BC869-25 BCP869 CHC SOT89
    Text: BCP869 BC869 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 500 mW (Tamb=25℃) -2 A -32 V 2. COLLECTOR 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -65℃ to +150℃


    Original     		PDF BCP869 BC869 OT-89 -500mA -100mA BC869-16 BC869-25 BC869 BC869-16 MARKING chc 1a50 BC869-25 BCP869 CHC SOT89

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 500 mW (Tamb=25℃) -2 A -32 V 2. COLLECTOR


    Original     		PDF OT-89 BC869 OT-89 -500mA -100mA BC869-16 BC869-25 BC869 BC869-16

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC869 Features • • High current max. 1.0A Low voltage (max. 20V) PNP Medium Power Transistors Maximum Ratings


    Original     		PDF BC869 25Vdc) 25Vdc, 150OC) 10Vdc, 500mAdc) BC869-16 BC869-25

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BC869 TRANSISTOR PNP 1. BASE FEATURES  NPN Complement to BC868  Low Voltage  High Current 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L BC869 BC868 -10mA, 100MHz BC869-16 BC869-25

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 ＳＯＴ－８９ TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 1.35 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -32


    Original     		PDF OT-89 BC869 100MHz BC869 BC869-16 BC869-25 OT-89-3L 500TYP 060TYP

    cec "sot89"

    Abstract: BC869 SOT89 chc CHC SOT89
    Text: Not Recommended for New Design Please Use BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE


    Original     		PDF BCX6925 BC868 BC869 BC869-16 BC869-25 BC869 -10mA* 150oC cec "sot89" SOT89 chc CHC SOT89

    BC869

    Abstract: cec "sot89" BC868 BC869-16 BC869-25 FMMT549
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC868 NPN PARTMARKING DETAILS -


    Original     		PDF BC869 BC868 BC869-16 BC869-25 150oC -100mA* BC869-16 BC869-25 -500mA, BC869 cec "sot89" BC868 FMMT549

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers


    OCR Scan     		PDF DD315 BFQ54T BFQ34T. 0031ST4 BB339

    philips bfq23

    Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634
    Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,


    OCR Scan     		PDF BFQ23 BFR91A. philips bfq23 BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634

    D 1398 Transistor

    Abstract: BFG32 BFG96 DD311
    Text: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV


    OCR Scan     		PDF G03114b BFG32 OT103 BFG96. OT103. D 1398 Transistor BFG32 BFG96 DD311

    2493 transistor

    Abstract: BFG35 BFG55 UBB337
    Text: •I Philips Sem iconductors — ^ 53^131 □ 0 iMfi3 b T T 3 H A P X N A PIER PHI LIP S /D IS C R ET E bVE p Product soeciflcation PNP 4 GHz wideband transistor FEATURES ^ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product


    OCR Scan     		PDF BFG55 OT223 BFG35. OT223. 2493 transistor BFG35 BFG55 UBB337

    cec PNP transistor

    Abstract: No abstract text available
    Text: Die no. B-93 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 60 V (min) at Iq =1.0 mA


    OCR Scan     		PDF OT-23) SSTA56 SSTA06, cec PNP transistor

    SOT89 marking cec

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistor FEATURES BC869 PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.


    OCR Scan     		PDF BC868. BC869 BC869-16 BC869-25 BC869 BC869-25 MGD845 SOT89 marking cec

    cec PNP transistor

    Abstract: pdta124et transistor PDTA124ET
    Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124ET FEATURES • Built-in bias resistors R1 and R2 typ. 22 kU each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


    OCR Scan     		PDF PDTC124ET. PDTA124ET PDTA124ET cec PNP transistor pdta124et transistor

    transistor MW 882

    Abstract: TRANSISTOR b 882 p 882 transistor transistor D 882 p transistor 882 transistor D 882 PNP TRANSISTOR SOT54 PDTA144ES
    Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144ES FEATURES • Built-in bias resistors R1 and R2 typ. 47 kO each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


    OCR Scan     		PDF PDTA144ES PDTC144ES. Jul01 transistor MW 882 TRANSISTOR b 882 p 882 transistor transistor D 882 p transistor 882 transistor D 882 PNP TRANSISTOR SOT54 PDTA144ES

    SOT89 marking cec

    Abstract: PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868 BC869 BC869-16 BC869-25
    Text: Philips Sem iconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 em itter 2 collector 3 base • Low voltage, high current LF applications.


    OCR Scan     		PDF BC869 BC868. BC869 BC869-16 BC869-25 SOT89 marking cec PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868

    bfq252

    Abstract: No abstract text available
    Text: • Philips Sem iconductors bbS3T31 □031731 757 M A P X PNP 1 GHz video transistors ^ £ N DESCRIPTION Product specification BFQ252; BFQ252A AMER PHILIPS/DISCRETE b^E D PINNING PNP silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a


    OCR Scan     		PDF bbS3T31 BFQ252; BFQ252A O-126) BFQ232 BFQ232A MBB893 UBB449 bfq252

    Untitled

    Abstract: No abstract text available
    Text: Philip^emiconductors • bbSBTBl D O B E l ? 1! OEb MAPX Product specification PNP 1 GHz switching transistor “ MPS3640 N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING PNP general purpose switching transistor in a SOT54 TO-92 envelope. PIN 1 DESCRIPTION


    OCR Scan     		PDF MPS3640

    SOT89 marking cec

    Abstract: BRS32 marking BR2 BSR32 marking BR4
    Text: Philips Semiconductors Product specification PNP medium power transistors FEATURES BSR30; BSR31; BSR32; BSR33 PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and general industrial applications


    OCR Scan     		PDF BSR30; BSR31; BSR32; BSR33 BSR40; BSR41 BSR42 BSR43. BRS30 BRS31 SOT89 marking cec BRS32 marking BR2 BSR32 marking BR4

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - JANUARY 1996 _ O FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH h FE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE BC868 NPN PARTMARKING DETAILS -


    OCR Scan     		PDF BC868 BC869 BC869-25 BC869-16 -10Qjj -10mA* -10hA -100mA` BC869-25

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 -JANUARY 1996 O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC868 NPN PARTMARKING DETAILS -


    OCR Scan     		PDF BC868 BC869 BC869-16 BC869-25 BC869-16 BC869-25 -500mA, lc--500mA, 35MHz

    philips bfq32

    Abstract: BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32
    Text: Product specification Philips Sem iconductors 7=v3/ -JZ3 PNP 4 GHz wideband transistor PH IL IPS INTERNATIONAL DESCRIPTION BFQ32 7 1 1 0 0 2 b Ü Ü 4 S M 2 Ü 41D H I P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband


    OCR Scan     		PDF BFq32 BFR96. 711062b 00M5423 MBB347 philips bfq32 BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32