5R380CE
Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor 1 IPP50R380CE, IPA50R380CE IPI50R380CE Description
|
Original
|
IPx50R380CE
IPP50R380CE,
IPA50R380CE
IPI50R380CE
5R380CE
5R38
IPI50R380CE
IPP50R380CE
ID032
5r380
|
PDF
|
IPP50R280Ce
Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Text: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not
|
Original
|
|
PDF
|
Current-Voltage Based Lookup-Table Diode Model
Abstract: No abstract text available
Text: Accurate Scalable Capacitance/Current-Voltage Based Lookup-Table Diode Model Ce-Jun Wei1, Yu Zhu, Hong Yin, D. Whitefield, Frank Gao, and Dylan Bartle SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 [email protected] ABSTRACT — A capacitance and Current look-up table based
|
Original
|
|
PDF
|
3550C
Abstract: 5KP Series 3Kp Transistor tvs cr 3050B r-6 package
Text: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52487A RoHS Compliance Product Type: Part Number Series: TVS Diodes R-6 package type 3KP series & 5KP series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3: BLACK PLASTIC BODY / WITH WHITE PRINTING (CE/2005/15132)
|
Original
|
CE/2005/52487A
CE/2005/15132)
CE/2005/52487)
00hromium
3050B
3550C
5KP Series
3Kp Transistor
tvs cr
3050B
r-6 package
|
PDF
|
magnetron 2m210-m1
Abstract: NL10250 power supply for magnetron magnetron 200 2M130 RM1C60D50 Magnetron 2 kW 2M130 OTTO FU10X38 IEC664
Text: FX 740 T POWER SUPPLY UNIT FOR 2 KW MAGNETRON TECHNICAL NOTE Issue October 2004 FX 740 T CE Declaration of Conformity Dichiarazione di Conformità CE Manufacturer’s Name: Nome del Costruttore: Manufacturer’s Address: Indirizzo del Costruttore: ALTER s.r.l
|
Original
|
FX740
FX740T
EN55011:
73/23/EEC.
c42100
FX740T
magnetron 2m210-m1
NL10250
power supply for magnetron
magnetron 200
2M130
RM1C60D50
Magnetron 2 kW 2M130
OTTO
FU10X38
IEC664
|
PDF
|
thyristor control arc welding rectifier circuit
Abstract: YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw
Text: SM1180T & TM060 SWITCHING POWER GENERATOR FOR 6 KW MAGNETRON TECHNICAL NOTE Issue June 2002 SM1180T & TM060 Dichiarazione di Conformità CE CE Declaration of Conformity Nome del Costruttore: Manufacturer’s Name: ALTER s.r.l Indirizzo del Costruttore: Manufacturer’s Address:
|
Original
|
SM1180T
TM060
SM1180T
thyristor control arc welding rectifier circuit
YJ1600
AIR FLOW DETECTOR CIRCUIT DIAGRAM
WR340 waveguide directional coupler
power supply for magnetron
microwave oven magnetron
circuit diagram electronic choke for tube light
power supply for magnetron YJ1600
wiring diagram motor autotransformer
SCHEMATIC POWER SUPPLY kw
|
PDF
|
2M265-M12
Abstract: FX950T power supply for magnetron autotransformer wiring diagram 3KW HV transformer t 250v t250v 3KW GENERATOR magnetron 10 kw model m330
Text: FX 950 T POWER SUPPLY UNIT FOR 3 KW MAGNETRON TECHNICAL NOTE Issue April 2004 FX 950 T CE Declaration of Conformity Dichiarazione di Conformità CE Manufacturer’s Name: Nome del Costruttore: Manufacturer’s Address: Indirizzo del Costruttore: ALTER s.r.l
|
Original
|
FX950
FX950T
EN55011:
73/23/EEC.
FX950T
2M265-M12
power supply for magnetron
autotransformer wiring diagram
3KW HV transformer
t 250v
t250v
3KW GENERATOR
magnetron 10 kw
model m330
|
PDF
|
Heft 10
Abstract: MATSUA RELAIS Funkamateur Siemens Halbleiter
Text: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNP129041 Pandel Display Units RG Type • Structure Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d d te te ow p:/ fo d l /w low isc isc nan nan ing ww in on on ce ce fo
|
Original
|
LNP129041
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALPHABETICAL LIST OF SYMBOLS CD Q o P arasitic capac itan ce betw een drain and body Parasitic ca pacitan ce betw een drain and source o Parasitic ca pacitan ce betw een g ate and drain Q O C ds C qs Parasitic ca pacitan ce betw een g ate and source Cjss Input capacitan ce
|
OCR Scan
|
|
PDF
|
Silicon Zener Diodes melf
Abstract: 1N5225 1N5262 DL5225B DL5262B
Text: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s
|
OCR Scan
|
DL5225B
DL5262B
DO-35
1N5225.
1N5262
kDO-35
200mA
Silicon Zener Diodes melf
1N5225
1N5262
DL5262B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s
|
OCR Scan
|
DL5225B
DL5262B
ZMM5225.
|
PDF
|
BD400
Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Text: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce
|
OCR Scan
|
TD-401
TD-402
TD-403
O-404
TD-405
TD-406
TD-407
TD-408
TD-409
TD-411
BD400
TD-429
1N3712
in3712
TD-427
TD-423
TD-437
TD-422
|
PDF
|
|
|
1N5221
Abstract: 1N5281 75nC
Text: 1N5221 thru 1N5281 S IL IC O N P L A N A R Z E N E R D IO D E S Silicon Planar Zener Diodes S tandard Z e n e r v o lta g e to le ra n ce is ± 2 0 % .A d d s u ffix “A" fo r ± 1 0 % T o le ra n ce , su ffix “ B ' for ±5% tole ran ce, suffix “C " fo r ±2% to le ra n c e and suffix “ D ” for ±1% tole ran ce,
|
OCR Scan
|
1N5221
1N5281
DO-35
200mA
1N5281
75nC
|
PDF
|
1N5225
Abstract: 1N5262 SL5225 SL5226 SL5227 SL5228 SL5229 SL5230 SL5262
Text: SL5225 THRU SL5262 SILICON PLANAR ZENER DIODES, 500 mW, MINIMELF PACKAGE Silicon Planar Zener Diodes Standard Zener voltage tolerance is +20%. Add suffix "A” for ±10% to le ra n ce and su ffix “B" for ± 5 % tole ran ce. O th er A dm issible po w e r dissipation
|
OCR Scan
|
SL5225
SL5262
DO-35
1N5225.
1N5262.
SL5225.
SL5260
SL5261
SL5262
1N5225
1N5262
SL5226
SL5227
SL5228
SL5229
SL5230
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DL4728 thru DL4764 SILIC O N PLAN AR PO W ER Z E N E R DIODES Cathode Mark fo r use in s ta b ilizin g and clipp ing circu its w ith high pow er rating. S tan da rd Z e n e r vo lta g e to e ra n ce is 610% . Add 0 2 . 55 0 2 . 35 suffix "A " fo r 65% to le ra n ce . O th er to le ra n ce s a va ilab le
|
OCR Scan
|
DL4728
DL4764
DO-41
ZM4728.
|
PDF
|
2n2082
Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )
|
OCR Scan
|
2N3311
2N3312
2N3313
2N33ff
2N3314
2N3315
1N5555
1N5555
1N5556
1N5557
2n2082
2N2152
2N2075
2N2076
2N2153
2N2156
2N2079
2N2077
2N2078
|
PDF
|
Bridge diodes
Abstract: No abstract text available
Text: Whal HEWLETT iL'ttM PACKARD GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 F eatu res • Gold Tri-M etal System For Improved Reliability • Low C ap acitan ce • Low S eries R esistan ce • H igh C utoff F req u en cy
|
OCR Scan
|
HSCH-9301
HSCH-9351
HSCH-9351
HSCH-9301
Bridge diodes
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NEWS Updates on the world of Hitachi semiconductors Hitachi Introduces High-Performance Variable-ce Diodes for Mobile Communications itach i h as d ev elo p ed highp erform an ce variable-capac itance d iod es to im prove th e p erform an ce o f m ob ile co m m u n i
|
OCR Scan
|
D-85622
|
PDF
|
15N120CD1
Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Text: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR
|
OCR Scan
|
15N120BD1
15N120CD1
O-268
15N120CD1
15N120
GC smd diode
IXGT15N120BD1
smd diode Lf 047
|
PDF
|
10j 5kV
Abstract: No abstract text available
Text: _SANKEN ELECTRIC CO LTD S5E D • 7^0741 GGOlDb? 4bû H S A K J 7 High Voltage Diodes for Distributor-less Ignitor I E x ce llen t heat re sista n ce for high tem perature operations I Anti-twist p ro c e sse d at time of resin molding along with ignition coil
|
OCR Scan
|
SHV-10J
100jiA
10j 5kV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
|
OCR Scan
|
12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
|
PDF
|
sony tuners
Abstract: C25 diode sony tuner radio 1T359 DIODE C2 7
Text: SONY CORP/COMPONENT PRODS MTE 0 3 f i E 3f l3 D 000200=1 7 ISONY 1T359 S O N Y . Silicon Variable C ap a cita n ce Diode Description The 1 T 3 5 9 is a variable cap a cita n ce diode for electronic tuning, designed for radio or T V tuners. t- o 7 - n Package Outline
|
OCR Scan
|
1T359
1T359
C2/C25)
sony tuners
C25 diode
sony tuner radio
DIODE C2 7
|
PDF
|
