2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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jrm a55
Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.
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64/256K
RS232C-A
jrm a55
tip 0ff 0401 ANALOG
irf 5630
ko 224 4K tantalum capacitors jrm a45
irf 7408
bt 4840 pinout diagram
A9F7
29 INCH crt tv FBT pinout
chassis 3111 253 3266 2e
jrm A45
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HM65256
Abstract: No abstract text available
Text: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEA T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e. 50/60/75/100ns
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HM65256B
32768-word
100/120/150/200ns
50/60/75/100ns
160/190/235/310ns
55/65/80/105ns
175mW
65256BP
DP-28)
HM65256BFP
HM65256
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A109
Abstract: PH05
Text: A a F L AK E RETARDANT 9 C O L OR = BLA CK, /§\A>TBB P “ R AflTK A1 /A R H O E . BRONZE PER ¿4\ I N S E R T 5 S BOARDLO A AT I NG I THERM OP LAST IC 3ER Q Q- B-62 G 4 3 2 04 , 1[ P L A T I Nb PER F A CE ►! L SU PSB ^I TH OB SOI B ”~E IN S E R T EO A RBBO C K I
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00-B-7B0
QQ-B-626,
L-T-10727,
QC-N-290.
0B50LE"
747299-OBSOLE"
A109
PH05
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50A33
Abstract: No abstract text available
Text: S T E T CO INC 43E D • a t s m s s nnoBEMfl ■ stco 9-3^-/3 RFI SUPRES5ION COILS ELECTRONIC COMPONENTS LSSC, 77A, 5QA SERIES Option without insulating material protection LSSC/B. LSSC -3 4 - O rd e rin g Code L S S C -5 R 0 M L S S C -9 R 0 M L S S C -1 5 0 M
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102Tol.
10X26
50A33
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SM 78A
Abstract: D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A
Text: SGS-THOMSON S i ;L Ì S lftB lD (S Ì BD 675/75A/77/77A/79/79A /81 B D 676/76A /78/78A /80/80A /82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu
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BD675/75A/77/77A/79/79A/81
BD676/76A/78/78A/80/80A/82
BD675,
BD675A,
BD677,
BD677A,
BD679,
BD679A
BD681
O-126
SM 78A
D675
LE 79A
D676
BD675
BD675A
BD676
BD676A
BD677
BD677A
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d677a
Abstract: d676 D675A d681 d677
Text: SGS-THOMSON BD675/75A/77/ 77A/79/79A/81 BD676/76A/78/ 78A/80/80A/82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu ration and are mounted in Jedec TO-126 plastic
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BD675/75A/77/
7A/79/79A/81
BD676/76A/78/
8A/80/80A/82
BD675,
BD675A,
BD677,
BD677A,
BD679,
BD679A
d677a
d676
D675A
d681
d677
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ICF CP 1005
Abstract: SM 71A diode a4945 13003 application notes 13003 TO 92 PACKAGE X 13003 1N3064 TU F 13003 ISTD-883 pj 1126
Text: MI L - M - 3 8 5 1 0 / 77A 20 August 1984 SUPERSLffl Tl G MI L - M- 3 8 5 1 0 / 7 7 US AF 18 O c t o b e r 1979 MI L I T A R Y MI CROCI RCUI TS, D I G I T A L , SCHOTTKY T T L MONOLI THI C S I L I C O N This sp e c ific a tio n is me n t s and Agencies
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L-M-38510/77A
MIL-M-38510/77
MIL-M-38510,
505-038/A4945
ICF CP 1005
SM 71A diode
a4945
13003 application notes
13003 TO 92 PACKAGE
X 13003
1N3064
TU F 13003
ISTD-883
pj 1126
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Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LE A D P b -FR E E LF3 S n 1 00% Yes Yes * TERM. NO.’s FOR REF. ONLY DIMENSION MAY BE EXCEEDED WITH SOLDER ONLY -A - .1 5 0 / . 1 8 0 * [ 3 .8 1 /4 .5 7 ] 77A i .7 3 0 MAX. [1 8 .5 4 ] NOTCH LOCATES TERM. #1 UAV oU 1 .6 8 0 MAX.
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671-0353-LF3
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Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL Sn63% , LF3 NOTCH P b 37 % S n 1 00% RoHS LE A D P b -FR E E No No Yes Yes LOCATES TERM. #1 -A - .1 5 0 /.2 1 5 TERM. (6E) [3 .8 1 /5 .4 6 ] N O .’ s FOR REF. ONLY w i .7 3 0 MAX. [ 1 8 .5 4 ] 77A UAV 1 .6 8 0 MAX. [4 2 .6 7 ]
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1200VAC,
1500VAC
4000Hz,
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SCR GE C20F
Abstract: scr C20F scr c20d ge c30b GE C20F GE C20B GE scr C20f GE SCR c20b GE C1220 scr GE C33B
Text: PHASE CONTROL SCR’s MEDIUM CURRENT 7.5 TO 25 AMPERES CIO GE TYPE CM 2N1770A-77A* 2N1770-78 JED EC C36 C31 -33 C l 22 — — — 2N1842-50 — — — C20-22 C3Q-32 C37 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE 25-400 25-600 25-600
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C20-22
C30-32
C31-33
2N1770A-77A*
2N1770-78
2N1842-50
2n1847
2N1776A
2N1776
2n1848
SCR GE C20F
scr C20F
scr c20d
ge c30b
GE C20F
GE C20B
GE scr C20f
GE SCR c20b
GE C1220 scr
GE C33B
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Untitled
Abstract: No abstract text available
Text: Advance Information XM20C128S 128K 16K x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • • • The XM20C128S is a high speed nonvolatile RAM Module. It is comprised of eight Xicor X20C16 high speed NOVRAMs, a high speed “ACT" decoder and
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XM20C128S
XM20C128S
X20C16
36-pin
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X20C
Abstract: No abstract text available
Text: Advance Information n XM20C128S 1 28K a x 1 6K X 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • • • The XM20C128S is a high speed nonvolatile RAM Module. It is comprised of eight Xicor X20C16 high speed NOVRAMs, a high speed “ACT" decoder and
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XM20C128S
XM20C128S
X20C16
X20C
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NOVRAM
Abstract: M77A d30ne X20C16 X20C64 XM20C64
Text: H Advance Information S U XM 20C64 64K ! 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES D E S C R IP T IO N • • • • The XM20C64 is a high speed nonvolatile RAM Module. It is comprised of four Xicor X20C16 high speed NOVRAMs, a high speed “ACT”decoder and decoupling
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XM20C64
XM20C64
NOVRAM
M77A
d30ne
X20C16
X20C64
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Untitled
Abstract: No abstract text available
Text: J X2804C 4K ü c u r 5 1 2 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * 90ns Access Time * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms
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X2804C
640ms
X2804C
150ns
200ns
250ns
24-Lead
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Untitled
Abstract: No abstract text available
Text: Advance Information X 64K XM20C64FR l f l K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • High Speed: Iaa = 55ns NO Batteries!! Low Power CMOS AUTOSTORE™ NOVRAM —Automatically Stores RAM data to E2PROM upon Power-fall Detection Open Drain AUTOSTORE Output Pin
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XM20C64FR
XM20C64FR
XicorX20l
----------30pF
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DIN 3852
Abstract: DIN 3852-1 x2816 X2816C X2816CI X28C16 C3052
Text: IO G X2816C 16K H I! 2 0 4 8 x 8 Bit _ 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write
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X2816C
16-Byte
X2816C
DIN 3852
DIN 3852-1
x2816
X2816CI
X28C16
C3052
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X20C64
Abstract: X20C16 XM20C64S AO-A10
Text: X Advance Information XM20C64S 64K i B I E 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES • High Speed: I aa = 55 ns • NO! Batteries!! • AUTOSTORE™ NOVRAM —Automatically Stores RAM data to E2PROM upon Power-fall Detection • Open Drain AUTOSTORE Output Pin
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XM20C64S
XM20C64S
X20C64
X20C16
AO-A10
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Untitled
Abstract: No abstract text available
Text: XICOR INC ^41743 SHE D D D D 3 Û3 Ô 703 Advance Information 64K XM20C64FR 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES D E S C R IP T IO N • • • • The XM20C64FR is a high speed nonvolatile RAM Module. It is comprised of f our Xicor X20C16 high speed
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XM20C64FR
XM20C64FR
X20C16
28-lead
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k 3878
Abstract: ZD 682
Text: X Advance Information o r 8K x 8 XM20C64FR 64K iE High Speed AUTOSTORE NOVRAM FEATURES D E S C R IP T IO N • • • • The XM20C64FR is a high speed nonvolatile RAM Module. It is comprised of four Xicor X20C16 high speed NOVRAMs, a high speed “ACT” decoder and decoupling
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XM20C64FR
coF10
----------30pF
XM20C64FR
k 3878
ZD 682
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Untitled
Abstract: No abstract text available
Text: X28HT010 1M 128K x 8 Bit High Temperature, 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 170°C Full Functionality • Simple Byte and Page Write — Single 5V Supply — Self-Timed — No Erase Before Write
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X28HT010
X28HT010
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Untitled
Abstract: No abstract text available
Text: J t ì f i f l T X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed — No Erase Before Write
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X2816C
16-Byte
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Untitled
Abstract: No abstract text available
Text: t e X28HT512 512K r 64K x 8 Bit High Temperature, 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 170°C Full Functionality • Simple Byte and Page Write — Single 5V Supply — Self-Timed — No Erase Before Write
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X28HT512
X28HT512
0004b7b
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ci 555 ne
Abstract: CI 555 data 3878 jis f07 X20C64
Text: Advance Information J t t E 64K XM20C64FR H 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES • High Speed: Iaa = 55ns NO Batteries!! Low Power CMOS AUTOSTORE™ NOVRAM —Automatically Stores RAM data to E2PROM upon Power-fall Detection Open Drain AUTOSTORE Output Pin
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XM20C64FR
XM20C64FR
318fi
ci 555 ne
CI 555 data
3878
jis f07
X20C64
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