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    CD2397 TRANSISTOR Search Results

    CD2397 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CD2397 TRANSISTOR Datasheets Context Search

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    CD2397

    Abstract: cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"
    Text: CD2397 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2397 is a common base NPN Bipolar Microwave Transistor. It is designed for Pulse Applications within the 960 to 1215 MHz Avionics frequency range. PACKAGE STYLE .230 2L FLG FEATURES: • Common Base Pulse at 43V


    Original     		PDF CD2397 CD2397 cd2397 Transistor 2L TRANSISTOR "RF Power Transistor"