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    C5750X7S2A106KT Search Results

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    C5750X7S2A106KT Price and Stock

    TDK Corporation C5750X7S2A106K230KB

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 100V 10uF X7S 10% T: 2.3mm
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    Mouser Electronics C5750X7S2A106K230KB 54,378
    • 1 $2.12
    • 10 $1.53
    • 100 $1.14
    • 1000 $0.86
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    TTI C5750X7S2A106K230KB Reel 19,500 500
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    TDK Corporation C5750X7S2A106KT000N

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    Bristol Electronics C5750X7S2A106KT000N 225
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    C5750X7S2A106KT000N 7 3
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    • 10 $2.1
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    Quest Components C5750X7S2A106KT000N 101
    • 1 $3.36
    • 10 $3.36
    • 100 $1.68
    • 1000 $1.68
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    C5750X7S2A106KT000N 5
    • 1 $2.8
    • 10 $2.1
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    Avnet Asia C5750X7S2A106KT000N 12 Weeks 500
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    TDK Corporation C5750X7S2A106KT

    CERAMIC CAPACITOR, CERAMIC
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    Quest Components C5750X7S2A106KT 500
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    Chip 1 Exchange C5750X7S2A106KT 3,000
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    TDK Corporation C5750X7S2A106K230KE

    Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 2220 100V 10uF X7S 10% T:2.3mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI C5750X7S2A106K230KE Reel 5,000 500
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    • 1000 $1.15
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    TDK Corporation C5750X7S2A106KT000S

    Electronic Component
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    ComSIT USA C5750X7S2A106KT000S 29,000
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    C5750X7S2A106KT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: C5750X7S2A106K230KB TDK Item Description : C5750X7S2A106KT* DC Bias Characteristic 10 Application & Main Feature Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C5750 [EIA CC2220] -10 -20 -30 -40 -50 -60 -70 -80 -90 20 40 60 80 100 120


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    PDF C5750X7S2A106K230KB C5750X7S2A106KT* C5750 CC2220] AEC-Q200 50Mohm 100Vdc) 100kHz 500kHz

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


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    PDF AFT20P140--4WN AFT20P140-4WNR3

    C5750X7S2A106KT

    Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original
    PDF AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501

    TRANSISTOR J477

    Abstract: J890
    Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.


    Original
    PDF AFT23S170â 13SR3 TRANSISTOR J477 J890

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original
    PDF AFT20P140--4WN 1880-2025dated AFT20P140-4WNR3 AFT20P140-4WGNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original
    PDF AFT20P140--4WN AFT20P140-4WNR3 AFT20P140-4WGNR3 1/2014Semiconductor,