C5122 TRANSISTOR Search Results

C5122 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

C5122 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C5122 TRANSISTOR Abstract: transistor c5122 2SC5122 C5122 Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC5122 C5122 TRANSISTOR transistor c5122 2SC5122 C5122
C5122 TRANSISTOR Abstract: 2SC5122 Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC5122 O-92MOD C5122 TRANSISTOR 2SC5122
C5122 TRANSISTOR Abstract: C5122 2SC5122 transistor c5122 Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)	Original	PDF	2SC5122 O-92MOD C5122 TRANSISTOR C5122 2SC5122 transistor c5122
Untitled Abstract: No abstract text available Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)	Original	PDF	2SC5122 O-92MOD
C5122 TRANSISTOR Abstract: C5122 2SC5122 Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC5122 O-92MODlled C5122 TRANSISTOR C5122 2SC5122
AT89C5122D Abstract: WT7 SMD A14N Text: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1	Original	PDF	80C51 4202C AT89C5122D WT7 SMD A14N
WT4 smd Abstract: scr 151 automatic room power controller using scr 10uH coil THX 201 AT8XC5123 SCR Gate Drive for ac to dc converter THx 208 AT89C51RD2 PROGRAMMER dps 8000 Text: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1	Original	PDF	80C51 4202C WT4 smd scr 151 automatic room power controller using scr 10uH coil THX 201 AT8XC5123 SCR Gate Drive for ac to dc converter THx 208 AT89C51RD2 PROGRAMMER dps 8000