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    C38 CHIP Search Results

    C38 CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    C38 CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B38 SMD Transistor

    Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
    Text: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805


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    PDF CC0805 CR0805 B38 SMD Transistor 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC

    M5819P

    Abstract: 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248
    Text: AMD K6 SDB - TOP LEVEL Revised: Friday, March 12, 1999 K6SDBREVB Revision: REV C Item Quantity Reference Value _ 1 2 1 BT1 27 C1,C2,C4,C8,C12,C20,C21, C23,C26,C36,C37,C38,C42, C47,C56,C59,C60,C61,C62, C63,C64,C68,C79,C95,C97,


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    PDF QFP160 100MHz SSOP48 32-bit, QFP208 TS040 QFP144 TP11SH8 PE68515 PLCC32 M5819P 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248

    7343 capacitor

    Abstract: TDSON-8 Mosfet capacitor 22uf 10v 0402 4TPD680M TDSON-8 capacitor 1uf 16v x7r 0402 ILSCO 22-milliohm IHLP4040DZERR56M11 MFR resistor
    Text: Filename: PMP2277_REVA_bom.xls Date: 01/12/2007 PMP2277_REVA BOM COUNT 6 3 1 6 3 3 1 2 1 3 3 6 3 4 1 3 3 3 3 1 3 2 1 1 1 3 1 1 1 1 1 3 1 1 3 1 2 5 3 2 3 RefDes C1, C2, C18, C19, C30, C31 C11, C25, C37 C12 C13, C16, C26, C28, C38, C40 C15, C27, C39 C17, C29, C41


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    PDF PMP2277 680uF 047uF 7343 capacitor TDSON-8 Mosfet capacitor 22uf 10v 0402 4TPD680M TDSON-8 capacitor 1uf 16v x7r 0402 ILSCO 22-milliohm IHLP4040DZERR56M11 MFR resistor

    R2532

    Abstract: MEC8-150-02-L-D-EM2 CR16-4751FM r-2532 philips cr16
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 890B FastDAACS Item 1 2 3 Qty 3 Reference C80,C81,C89 C94 Opt C88 (Opt) 4 1 C88 5 6 1 9 7 8 9 10 1 5 1 15 11 43 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1 5 1 1 1 3 9 1 2 2 1 1 1 C36 C1,C2,C32,C35,C38,C76,C78,


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    PDF C27-31 C13-26 C45-50 C54-56, C63-75 470uF POL10-1CS6 LTC4300A-1CMS8 LTC4410ES6 R2532 MEC8-150-02-L-D-EM2 CR16-4751FM r-2532 philips cr16

    C37 diode

    Abstract: STA328 AN2032 sta120 an2032 st STA328-EVB LD1086DT50 CON20 GP1F31R LD1086DT33
    Text: AN2032 APPLICATION NOTE STA328 EVALUATION BOARD 1 DESCRIPTION The STA328 is a single chip solution for digital audio processing and control in stereo applications. It provides high-quality, high-efficiency, all digital amplification. The internal 24-bit DSP Digital Signal Processing allows for high resolution processing at all


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    PDF AN2032 STA328 24-bit 28-bit C37 diode AN2032 sta120 an2032 st STA328-EVB LD1086DT50 CON20 GP1F31R LD1086DT33

    C38 chip

    Abstract: RCM3000 R46R47 c38 transistor R27 transistor transistor jp4 TN303 Rabbit-3000 R200W R3022
    Text: RCM3000/RCM3100 RTC Field Fix 1. Replace R20 with 0 W resistor. 2. Replace R23 with 2 kW resistor. 3. Reapply conformal coating as described in TN303 between Y2 and Rabbit 3000 chip when board is to be used in harsh environments. R1 Y1 RP1 JP1 C1 R4 C3 R5


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    PDF RCM3000/RCM3100 TN303 C38 chip RCM3000 R46R47 c38 transistor R27 transistor transistor jp4 TN303 Rabbit-3000 R200W R3022

    MAX232CSE

    Abstract: MBRS120T3 MC74HC00AD 01UF 2.1mm DC power jack connector MC7805ACT 2.1mm DC power jack 100UF C210 DSP56002
    Text: 2 1 POWER CONNECTOR J1 C22 0.01uF C21 0.01uF C25 0.01uF 24 GG NN DD U1 MC7805ACT 1 IN OUT C18 100UF 0.33uF 25V 35V C37 C26 0.1uF ARE TANTALUM OR MYLAR CHIPCAPS MBRS120T3 D1 MBRS120T3 D2 C34 0.1uF P1 IS 2.1mm Power Jack NOTE: C18,C19 MBRS120T3 D4 MBRS120T3


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    PDF MC7805ACT 100UF MBRS120T3 MC74HC00AD DSP56002 XC68HC705K1 AT29C256JC MAX232CSE MBRS120T3 MC74HC00AD 01UF 2.1mm DC power jack connector MC7805ACT 2.1mm DC power jack C210 DSP56002

    PA DRIVER AMPLIFIER

    Abstract: schematics for a PA amplifier balun diode mixer "rf modulator" GRMx7r rf modulator datasheet FR10K GRM39COG TCM4400 TRF1020
    Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts


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    PDF TRF3520 SLWS060A 48-Pin TRF3520 900-MHz PA DRIVER AMPLIFIER schematics for a PA amplifier balun diode mixer "rf modulator" GRMx7r rf modulator datasheet FR10K GRM39COG TCM4400 TRF1020

    GRM39COG

    Abstract: FR10K TCM4400 TRF1020 TRF3520 SSB Modulator application note K3332 GRMx7r grm39cog capacitor
    Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts


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    PDF TRF3520 SLWS060A 48-Pin TRF3520 900-MHz GRM39COG FR10K TCM4400 TRF1020 SSB Modulator application note K3332 GRMx7r grm39cog capacitor

    P220G

    Abstract: No abstract text available
    Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts


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    PDF TRF3520 SLWS060A 48-Pin 900-MHz TRF3520PFB TRF3520EVM SSYA008 P220G

    FR10K

    Abstract: GRM39COG TCM4400 TRF1020 TRF3520 SSB Modulator application note LL1608-FR10K GRMx7r S-PQFP-G48
    Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts


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    PDF TRF3520 SLWS060A 48-Pin TRF3520 900-MHz FR10K GRM39COG TCM4400 TRF1020 SSB Modulator application note LL1608-FR10K GRMx7r S-PQFP-G48

    Untitled

    Abstract: No abstract text available
    Text: SL2030 High Performance Broadband Mixer Oscillator Preliminary Information DS5116 Issue 2.1 October 1999 Features ● ● ● ● ● Ordering Information Single Chip Broadband Solution Wide Dynamic Range RF Input Low Phase Noise Balanced Internal Local Oscillator


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    PDF SL2030 DS5116 SL2030/IG/MP1S SL2030/IG/MP1T MIL-STD-883B SL2030

    IT397

    Abstract: No abstract text available
    Text: SL2035 High Performance Broadband Downconverter Preliminary Information DS5117 Issue 2.1 October 1999 Features ● ● ● ● ● Ordering Information Single Chip Broadband Solution Wide Dynamic Range RF Input Low Phase Noise Balanced Internal Local Oscillator


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    PDF SL2035 DS5117 SL2035/IG/MP1S SL2035/IG/MP1T IT397

    C35 zener

    Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


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    PDF AN215A, MRF1570T1 MRF1570FT1 C35 zener z15 Diode glass 125 c35 fet MOSFET c25 / 0

    93c46 st

    Abstract: HB626-1 2n3904 for oscillator LM393M 2N3904 C44 LM393M ST 93C46 NDS351N 01UF 2N3904+C17
    Text: APPLICATION NOTE STE10/100A Bill of Materials by Darin Kincaid STE10/100A Evaluation Board Revised: Thursday, February 10, 2000 Revision: 1.0f WITH 7705 FOR POWER ON RESET WITH 2N3904 TO INSOLATE PME# BETWEEN PCI & CHIP Bill Of Materials February 10, 2000


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    PDF STE10/100A 2N3904 93c46 st HB626-1 2n3904 for oscillator LM393M 2N3904 C44 LM393M ST 93C46 NDS351N 01UF 2N3904+C17

    13.56Mhz class e power amplifier RFID

    Abstract: 13.56Mhz class e power amplifier Class B power amplifier, 13.56MHz ST AN1954 Class E power amplifier, 13.56MHz 742 792 042 matching RFID loop antenna 13.56 RFID loop antenna 13.56MHz Class E amplifier RFID pcb antenna 13.56MHz
    Text: AN1954 APPLICATION NOTE How to Extend the Operating Range of the CRX14 Contactless Coupler Chip This Application Note describes how to extend the operating range of the CRX14 Contactless Coupler Chip, which is used to read RFID Tags. In the method described, the


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    PDF AN1954 CRX14 CRX14 ISO14443 56MHz 13.56Mhz class e power amplifier RFID 13.56Mhz class e power amplifier Class B power amplifier, 13.56MHz ST AN1954 Class E power amplifier, 13.56MHz 742 792 042 matching RFID loop antenna 13.56 RFID loop antenna 13.56MHz Class E amplifier RFID pcb antenna 13.56MHz

    DS5117

    Abstract: BCW31 SL2030 SL2035
    Text: SL2035 High Performance Broadband Downconverter Preliminary Information DS5117 Issue 2.1 October 1999 Features ● ● ● ● ● Ordering Information Single Chip Broadband Solution Wide Dynamic Range RF Input Low Phase Noise Balanced Internal Local Oscillator


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    PDF SL2035 DS5117 MIL-STD-883B SL2035 BCW31 SL2030

    C38 diode

    Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


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    PDF 470on. AN215A, MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 C38 diode Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor

    IC51-0684-390-1

    Abstract: IC51-0444-400 IC51-0844-401-1 IC51-0324-453 IC51-1004-405-1 IC51 Series IC51-0284-399 IC51-0204-602 IC51-0524-411-1 440.01 pcb
    Text: IC51 Series Clamshell Plastic Lead Chip Carrier (PLCC) Specifications Part Number (Details) 1,000M W min. at 500V DC Insulation Resistance: Dielectric Withstanding Voltage: 700V AC for 1 minute 30m W max. at 10mA/20mV max. Contact Resistance: 1A max. Current Rating:


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    PDF 10mA/20mV 27x30 IC51-1244-410-1 IC51-0844-401-1 27x20 27x24 IC51-1004-405-1 IC51-0684-390-1 27x16 IC51-0684-390-1 IC51-0444-400 IC51-0844-401-1 IC51-0324-453 IC51-1004-405-1 IC51 Series IC51-0284-399 IC51-0204-602 IC51-0524-411-1 440.01 pcb

    2N5552

    Abstract: No abstract text available
    Text: -Jfotttron r a t y © ¥ @ Ä ¥ Ä 1L ® LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


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    PDF 203mm) 2N5552. SDT06523, SDT06623 2N5552

    IT402

    Abstract: 16ISA resonator c28 SL2030
    Text: M ITEL S E M IC O N D U C T O R SL2030 High Performance Broadband Mixer Oscillator Prelim inary Inform ation DS5116 Issue 2.1 October 1999 Features • • • • • Ordering Information Single Chip Broadband Solution Wide Dynamic Range RF Input Low Phase Noise Balanced Internal Local Oscillator


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    PDF SL2030 DS5116 MIL-STD-883B SL2030 7APR95 27FEB9712JUN97 9DEC97 GPD00012 IT402 16ISA resonator c28

    IT397

    Abstract: SL2030 BCW31 DS5117 MS-012AC SL2035 diode 47 c38 SL203
    Text: M ITEL S E M IC O N D U C T O R SL2035 High Performance Broadband Downconverter Prelim inary Inform ation DS5117 Issue 2.1 October 1999 Features • • • • • Ordering Information Single Chip Broadband Solution Wide Dynamic Range RF Input Low Phase Noise Balanced Internal Local Oscillator


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    PDF SL2035 DS5117 MIL-STD-883B SL2035 7APR95 27FEB9712JUN97 9DEC97 GPD00012 IT397 SL2030 BCW31 MS-012AC diode 47 c38 SL203

    C3883

    Abstract: No abstract text available
    Text: 8368602 SOL ITRON D E V I C E S INC_ 95D 0 2 8 2 9 DEJfl3bflbDS ODDaflET D 2 7"T " IP ia O E X U K g T T Æ i ? / ^ [ L © 1 Devices. Inc. LOW TO M EDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER


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    PDF GG02fl30 C3883

    728-bits

    Abstract: No abstract text available
    Text: TB1212N/F TOSHIBA TOSHIBA Bi-CMOS INTEGRATED CIRCUIT T• R 13 mmr m 13 N u -m g SILICON MONOLITHIC Tm R 19 mmr m 17 F ■ SINGLE CHIP NICAM SYSTEM The TB1212N and TB1212F are single chip processor for NICAM Near Instananeous Conpand Audio. Multiplex System. This is to get a PCM sound signal from QPSK


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    PDF TB1212N/F TB1212N TB1212F TA2047F SDIP64-P-750-1 QFP80-P-1420-0 728-bits