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    C3225 NPN Search Results

    C3225 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    C3225 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR C3225

    Abstract: No abstract text available
    Text: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)


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    PDF 2SC3225 TRANSISTOR C3225

    TRANSISTOR C3225

    Abstract: c3225 transistor C3225 npn 2sc3225 transistor 2SC3225 DSA00428678 C3225
    Text: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)


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    PDF 2SC3225 TRANSISTOR C3225 c3225 transistor C3225 npn 2sc3225 transistor 2SC3225 DSA00428678 C3225

    TRANSISTOR C3225

    Abstract: c3225 transistor 2SC3225 C3225 npn
    Text: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)


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    PDF 2SC3225 O-92MOD TRANSISTOR C3225 c3225 transistor 2SC3225 C3225 npn

    TRANSISTOR C3225

    Abstract: c3225 transistor C3225 npn 2SC3225 C3225 2sc3225 transistor
    Text: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)


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    PDF 2SC3225 TRANSISTOR C3225 c3225 transistor C3225 npn 2SC3225 C3225 2sc3225 transistor

    TRANSISTOR C3225

    Abstract: C3225 npn 2SC3225 C3225
    Text: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)


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    PDF 2SC3225 TRANSISTOR C3225 C3225 npn 2SC3225 C3225

    C3225 npn

    Abstract: 2SC3225 C3225
    Text: 2SC3225 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3225 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


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    PDF 2SC3225 O-92MOD 20070701-JA C3225 npn 2SC3225 C3225

    C3225 npn

    Abstract: 2SC3225 C3225
    Text: 2SC3225 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3225 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


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    PDF 2SC3225 O-92MOD C3225 npn 2SC3225 C3225

    HT1621B

    Abstract: LED Matrix PIC Board schematic ni usb 6211 TC7343 smd code 38P R3216 CAP tantal SMD R1005 ni usb 6212 b36 smd diode
    Text: 6 Schematic Diagrams and PCB Silkscreen 6-2 DC/DC Board 6-2-1 Schematic Diagrams SENS P10 6-179 6 Schematic Diagrams and PCB Silkscreen 6-180 SENS P10 6 Schematic Diagrams and PCB Silkscreen SENS P10 6-181 6 Schematic Diagrams and PCB Silkscreen 6-182 SENS P10


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    PDF MMBD4148 200MA B340A SFD-P10K SCD-P10K24 SDD-P10K8 SRW-P10K8 SFD-P10E SCD-P10E24 SDD-P10E8 HT1621B LED Matrix PIC Board schematic ni usb 6211 TC7343 smd code 38P R3216 CAP tantal SMD R1005 ni usb 6212 b36 smd diode

    schematic diagram dc-ac inverter sg3525

    Abstract: sg3525 application note DC-AC inverter sg3525 AN2794 schematic diagram battery charger sg3525 sg3525 Full-bridge SG3525 schematic diagram offline UPS sg3525 pwm INVERTER SG3525 IC
    Text: AN2794 Application note 1 kW dual stage DC-AC converter based on the STP160N75F3 Introduction The analysis, design and performance characterization of a 1 kW dual stage DC-AC converter, suitable for use in battery powered uninterruptible power supplies UPS or


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    PDF AN2794 STP160N75F3 schematic diagram dc-ac inverter sg3525 sg3525 application note DC-AC inverter sg3525 AN2794 schematic diagram battery charger sg3525 sg3525 Full-bridge SG3525 schematic diagram offline UPS sg3525 pwm INVERTER SG3525 IC

    b712 smd

    Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
    Text: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood


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    PDF SFD-P10K SCD-P10K24 SDD-P10K8 SRW-P10K8 SFD-P10E SCD-P10E24 SDD-P10E8 SRW-P10E8 2200mA, iEEE1394, b712 smd schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell

    AR5212

    Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
    Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)


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    PDF ISL6225VCC AR5212 ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516

    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


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