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    C30957E Search Results

    C30957E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30957E Unknown N TYPE SILICON P- I - N PHOTODETECTOR Scan PDF
    C30957E RCA Solid State Photodiode Scan PDF

    C30957E Datasheets Context Search

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    rca 036

    Abstract: C30957E photodiode demodulation
    Text: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


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    PDF 3030bl0 C30957E C30957E ED-0032/10/88 rca 036 photodiode demodulation

    photodiode demodulation

    Abstract: EG*G Optoelectronics rca 036 C30957E
    Text: ^Ü^EG kG CANADA LTD. Optoelectronics Division Wr$ï- Formerly; ItC il W Effective January 1, 1991 :tro ics Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


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    PDF C30957E C30957E ED-0032/10/88 photodiode demodulation EG*G Optoelectronics rca 036

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    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


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    PDF 3030bl0 C30957E C30957E t455-6191 ED-0032/10/88