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    C30919E Search Results

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    C30919E Price and Stock

    RCA C30919E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components C30919E 2
    • 1 $608.7939
    • 10 $591.3997
    • 100 $591.3997
    • 1000 $591.3997
    • 10000 $591.3997
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    C30919E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30919E Unknown Photodiode-Preamplifier Module Scan PDF
    C30919E RCA Solid State Photodiode Scan PDF

    C30919E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original
    PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    C30817

    Abstract: No abstract text available
    Text: Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules – InGaAs APD Modules Applications • Laser range finder Product Description These modules comprise of a photodetector PIN or APD and a transimpedance amplifier in the


    Original
    PDF C30659 C30659-1550-R2AH C30645 C30919E C30817 C30950EH LLAM-1550-R2AH C30662 LLAM-1060-R8BH C30817

    APD 1550 nm photodetector

    Abstract: C30950EH HUV-1100
    Text: ModuleS฀and฀optical฀receiverS฀ PIN AND APD Si PIN and APD Modules, InGaAs APD Modules RECEIVER MODULES FOR ANALYTICAL AND INDUSTRIAL APPLICATIONS Si PIN and APD Modules – InGaAs APD Modules applications • Laser range inder product฀description


    Original
    PDF C30659 C30659-1550-R08BH C30645 C30659-1550-R2AH C30919E C30817 C30950EH LLAM-1550-R2AH APD 1550 nm photodetector C30950EH HUV-1100

    C30919E

    Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
    Text: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan
    PDF C30919E 92LS-58S1 C30919E avalanche photodiode bias photodiode amplifier rise time avalanche photodiode

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID D WM il ÆM E l e c t r o Im lf#IO p t i c s 30 3 0 b l D D O D O I B ^ 711 H C A N A Photodiode7^Vhi7 C30919E DATA SH EET Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan
    PDF C30919E 3030bl0 W/-67

    tic 1060

    Abstract: No abstract text available
    Text: G E ELECTRO OPTICS R C il IQ D 3Ö741S4 □□0013e 1 « G E E O PhotodiodeHhbl C30919E DATASHEET Optics Photodlode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module • Responsivity Temperature Compensated to +10% for 1060 nm


    OCR Scan
    PDF 741S4 0013e C30919E QQQ0141 C30919E tic 1060

    ELLS 110

    Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
    Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan
    PDF 3D30bl0 00D0141 C30919E 0-27SI ELLS 110 avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E