Transistor C221
Abstract: c221 TRANSISTOR transistor NPN c221 STC221F C221
Text: STC221F NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High current application Features • High hFE : hFE=160~320 • Low collector saturation voltage : VCE sat =0.5V(MAX.) SOT-89 Ordering Information Type No. Marking
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STC221F
OT-89
KSD-T5B019-001
Transistor C221
c221 TRANSISTOR
transistor NPN c221
STC221F
C221
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Transistor c221
Abstract: No abstract text available
Text: STC221F NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High current applicat ion Features • High h FE : h FE= 160~ 320 • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) SOT-89 Ordering Information
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STC221F
OT-89
KSD-T5B019-001
Transistor c221
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TL272
Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty
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PTFB201402FC
PTFB201402FC
H-37248-4
17ubstances.
TL272
tl271
TL274
5228 voltage regulator
TL279
TL246
c221 TRANSISTOR
TL-250
tl2741
HD 1077 O
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TL235
Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz
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PTFB091507FH
PTFB091507FH
H-34288-4/2
16ubstances.
TL235
LM78L05ACM-ND
LM78L05ACMND
PTFB091507
TL230
ATC100B330JW500XB
TL1081
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transistor c237
Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
transistor c237
capacitor 471
c221 capacitor
TRANSISTOR c104
C103 c104
c804
TL227
c221 TRANSISTOR
C11256
B0828
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TRANSISTOR tl131
Abstract: tl239
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
TRANSISTOR tl131
tl239
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Untitled
Abstract: No abstract text available
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
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PTFB093608
Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608SV
PTFB093608SV
H-34275G-6/2
PTFB093608
32c216
c221 TRANSISTOR
TL251
tl250
transistor tl120
ATC100B2R7BW500X
TL143
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PTFB093608
Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608FV
PTFB093608FV
H-37275-6/2
PTFB093608
tl2272
ptfb09360
TL258
TL103 application note
tl131
TRANSISTOR c104
TL249
TL145
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J103 transistor
Abstract: transistor c223
Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced
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PTFB072707FH
PTFB072707FH
b072707fh-gr1
J103 transistor
transistor c223
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TL250
Abstract: TL239
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
TL250
TL239
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TL145
Abstract: TL245 transistor c111 C216 TL152
Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608FV
PTFB093608FV
H-37275-6/2
TL145
TL245
transistor c111
C216
TL152
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epc19 bobbin
Abstract: 6X1220R D2PAK-6 Proportional solenoid driver 72vdc schematic diagram r222 1kv capacitor R221 1kv
Text: FS6X0420RJ/ FS6X0720RJ/ FS6X1220RJ Fairchild Power Switch FPSTM Features Description • Current Mode PWM Control with a Fixed Operating Frequency (300kHz) The FS6X-Series is specially designed for off-line DC-DC converters with minimal external components. This device combines a current
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FS6X0420RJ/
FS6X0720RJ/
FS6X1220RJ
300kHz)
epc19 bobbin
6X1220R
D2PAK-6
Proportional solenoid driver
72vdc schematic diagram
r222 1kv
capacitor R221 1kv
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6X1220R
Abstract: Proportional solenoid driver Transistor C221 AN4137 c221 TRANSISTOR 22uF 50V electrolytic capacitor EPC19 epc19 bobbin an4141 r222 1kv
Text: FS6X0420RJ/ FS6X0720RJ/ FS6X1220RJ Fairchild Power Switch FPS Features Description Current Mode PWM Control with a Fixed Operating Frequency (300kHz) The FS6X-Series is specially designed for off-line DC-DC converters with minimal external components. This device combines a current mode PWM controller with a high voltage power
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FS6X0420RJ/
FS6X0720RJ/
FS6X1220RJ
300kHz)
FS6X1220RJ
6X1220R
Proportional solenoid driver
Transistor C221
AN4137
c221 TRANSISTOR
22uF 50V electrolytic capacitor
EPC19
epc19 bobbin
an4141
r222 1kv
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transistor SMD p41
Abstract: transistor c143 HDR 5X2 transistor c144 SMR0805 sog0508wg244l200 C144 TRANSISTOR rpack 10k Header 18X2 smd pushbutton footprint
Text: Item Number 1 2 3 4 5 6 7 8 Quantity 1 11 3 6 4 1 9 2 Value 220uF 0.1uF 1nF 100uF TANT 0.1uF 10nF 100pF 1nF Description 220uF 10V TPSE227K10R0100 X7R 0.1uF 25V 0805 X7R 1nF 50V 0805 TANT 100UF 16V X7R 0.1uF 25V 0805 X7R 10nF 25V 0805 COG 100pF 50V 0805 X7R 1nF 50V 0805
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220uF
100uF
100pF
220uF
TPSE227K10R0100
100pF
transistor SMD p41
transistor c143
HDR 5X2
transistor c144
SMR0805
sog0508wg244l200
C144 TRANSISTOR
rpack 10k
Header 18X2
smd pushbutton footprint
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MMA0204-50
Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
Text: Application Report SLEA032 - MARCH 2004 TAS5066-5121K6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5121K6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5121DKD from Texas Instruments TI .
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SLEA032
TAS5066-5121K6EVM
TAS5066
TAS5121DKD
24-bit
192kHz.
MMA0204-50
Zener C444
MMA-0204-50
C343 "zener diode"
zener c346
C406 Zener
BUF C221
diode c446
c343 diode
motorola D402 user guide
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a744s
Abstract: A744 DCU 0805 l141 wima MKS-4 BUF C145 c143 C143 T transistor Transistor C221 SLAA114
Text: Application Report SLEA043 – January 2005 TAS5028-5122C6EVM Application Report Jonas Svendsen Digital Audio & Video Products ABSTRACT The TAS5028-5122C6EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5028APAG and TAS5122DCA from Texas Instruments.
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SLEA043
TAS5028-5122C6EVM
TAS5028APAG
TAS5122DCA
32-bit
24-bit
48-bit
a744s
A744
DCU 0805
l141
wima MKS-4
BUF C145
c143
C143 T transistor
Transistor C221
SLAA114
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RF Power Transistors
Abstract: SEF420
Text: G S-T HOMSQN D7E D 73 C Ï749Q SEF420 SEF421 SEF422 SEF423 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS
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SEF420
SEF421
SEF422
SEF423
00V/450V
00V/450V
00A///S
C-223
RF Power Transistors
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Untitled
Abstract: No abstract text available
Text: International S I Rectifier PD-9.958B IRGTI120F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50K H z resonant • Switching-Loss Rating includes all "tail"
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10KHz
IRGTI120F06
C-223
100nH
C-224
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958b
Abstract: AS36 IFR 740 IRGTI120F06
Text: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
C-224
0DEDD14
958b
AS36
IFR 740
IRGTI120F06
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Diode C219
Abstract: fast recovery diode 600v 120a 958B IRGTI120F06 DIODE 47N DIODE RG
Text: International [ï«r!Rectifier PM95aB IRGTI120F06 "HALF-BRIDGE" IG BT INT-A-PAK Fast Speed IG BT V CE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail”
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IRGTI120F06
10KHz
50KHz
C-223
IRGTI120F06
C-224
Diode C219
fast recovery diode 600v 120a
958B
DIODE 47N
DIODE RG
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Diode C219
Abstract: resistance 220 ohm diode 1n6
Text: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
su513
IRGTI120F06
100nH
C-224
Diode C219
resistance 220 ohm
diode 1n6
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HC221A
Abstract: HC221T 74ls221 circuits diagram HC221 c221 TRANSISTOR
Text: r = 7 SGS-THOMSON Ä 7 # RÆOMômtEOTts*! M54HC221/221A M74HC221/221A DUAL MONOSTABLE MULTIVIBRATOR • HIGHSPEED tpD = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc=4 |iA (MAX.) AT Ta=25"C ACTIVE STATE Ice = 700 |iA (MAX.) AT Vcc=5V
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M54HC221/221A
M74HC221/221A
10LSTTL
54/74LS221
M54/74HC221/221A
HC221)
GC56610
HC221A)
HC221A
HC221T
74ls221 circuits diagram
HC221
c221 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POW ER OPERATIONAL AMPLIFIERS A p è x M I C R O T E C H N O L O C V PA89 •PA89A HTTP://W W W .APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • 1140V P-P SIGNAL OUTPUT WIDE SUPPLY RANGE — +75V to +600V PROGRAMMABLE CURRENT LIMIT
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PA89A
546-APEX
PA89U
0DD24fci3
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