C20 5T Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
D1U74T-W-1600-12-HB4AC		Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs

C20 5T Price and Stock

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Carling Technologies TC205-TR-B SWITCH ROCKER SPDT 15A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC205-TR-B	Bulk			11	1 - 10 - 100 $10.07182 1000 $10.07182 10000 $10.07182	Buy Now
Master Electronics	TC205-TR-B					1 - 10 $8.42 100 $5.58 1000 $4.02 10000 $4.02	Buy Now
Sager	TC205-TR-B				10	1 - 10 $10.04 100 $8.48 1000 $3.85 10000 $3.85	Buy Now
Carling Technologies TC205-TW-W SWITCH ROCKER SPDT 15A 125V
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DigiKey	TC205-TW-W	Bulk			12	1 - 10 - 100 $9.65167 1000 $9.65167 10000 $9.65167	Buy Now
Newark	TC205-TW-W	Bulk			10	1 $13.36 10 $13.36 100 $9.56 1000 $7.72 10000 $7.72	Buy Now
Master Electronics	TC205-TW-W					1 - 10 $8.07 100 $5.34 1000 $3.86 10000 $3.86	Buy Now
Sager	TC205-TW-W				10	1 - 10 $9.62 100 $8.12 1000 $3.69 10000 $3.69	Buy Now
Carling Technologies TC205-TB-B SWITCH ROCKER SPDT 15A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC205-TB-B	Bulk			12	1 - 10 - 100 $9.65167 1000 $9.65167 10000 $9.65167	Buy Now
Newark	TC205-TB-B	Bulk			10	1 $13.36 10 $13.36 100 $9.56 1000 $7.72 10000 $7.72	Buy Now
Master Electronics	TC205-TB-B					1 - 10 $8.07 100 $5.34 1000 $3.86 10000 $3.86	Buy Now
Sager	TC205-TB-B				10	1 - 10 $9.62 100 $8.12 1000 $3.69 10000 $3.69	Buy Now
Carling Technologies TC205-TW-B SWITCH ROCKER SPDT 15A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC205-TW-B	Bulk			12	1 - 10 - 100 $9.65167 1000 $9.65167 10000 $9.65167	Buy Now
Newark	TC205-TW-B	Bulk			10	1 $13.36 10 $13.36 100 $9.56 1000 $7.72 10000 $7.72	Buy Now
Master Electronics	TC205-TW-B		5			1 $8.536 10 $7.76 100 $5.17 1000 $3.76 10000 $3.76	Buy Now
Sager	TC205-TW-B				10	1 - 10 $9.62 100 $8.12 1000 $3.69 10000 $3.69	Buy Now
McGill Microwave Systems Ltd TC-205T-NMH TC-205T-NMH Connector
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DigiKey	TC-205T-NMH	Bag			1	1 $407.4 10 $391.1 100 $334.07 1000 $301.48 10000 $301.48	Buy Now

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C20 5T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Panasonic R1766 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	PDF	NE5550234 R09DS0039EJ0300 NE5550234-AZ HS350 R09DS0039EJ0300 NE5550234 Panasonic R1766
GRM21BB31 Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2 Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	PDF	NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2
ATC100A101JT Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Panasonic R1766 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766
ne5550 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm	Original	PDF	NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550
zener diode c24 5t Abstract: zener c15 5t zener diode c20 5t high voltage gate drive transformer zener c22 5t transformer mosfet gate drive circuit transformer bobbin 4 pin C15 5T C20 5t c22 5t Text: Design Idea DI-52 DPA-Switch 60 W DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA426R 60 W 36-75 VDC 12 V Forward Sync. Rect. Design Highlights Resistor R1 programs the under/over voltages and linearly	Original	PDF	DI-52 DPA426R PI-3551-060503 EFD25, EFD20-3F3 10-pin EFD20 zener diode c24 5t zener c15 5t zener diode c20 5t high voltage gate drive transformer zener c22 5t transformer mosfet gate drive circuit transformer bobbin 4 pin C15 5T C20 5t c22 5t
Untitled Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A
zener diode c20 5t Abstract: zener diode c24 5t zener c22 5t zener c15 5t fr9220 zener diode c20 ferroxcube bobbin transformer bobbin 4 pin transformer mosfet gate drive circuit K/zener diode c24 5t Text: DI-52 Design Idea DPA-Switch 60 W DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA426RN 60 W 36 – 75 VAC 12 V Forward Sync. Rect. Design Highlights • Low component count • High efﬁciency: 91.5% at 36 VDC using synchronous	Original	PDF	DI-52 DPA426RN DI-52 zener diode c20 5t zener diode c24 5t zener c22 5t zener c15 5t fr9220 zener diode c20 ferroxcube bobbin transformer bobbin 4 pin transformer mosfet gate drive circuit K/zener diode c24 5t
74n7 Abstract: L1-L10 D2074 ne5550 Text: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	PDF	NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-AZ 74n7 L1-L10 D2074 ne5550
R1766 Abstract: No abstract text available Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	PDF	NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766
Untitled Abstract: No abstract text available Text: 64 J9 Header, DNP 1 2 3 4 5 6 L1 Demonstration Board – EPC9102 Schematic VIN VIN_FILT 1 Q19 GPUL J1 Q21 EPC2001 EPC2001 GPUR C3, C6, C9 Rev. 1.0 C39, C42 A 2.2uF DNP PRYSWB T2 PRYSWA A 5T ER18 R6 10 D9 BAT41 VIN_FILT J4 5 5 4 2 C36 0.1U EPC2001 1 GND D2	Original	PDF	EPC9102 EPC2001 BAT41 LP2985 LM5113
74n7 Abstract: R1766T Text: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	PDF	NE5550234 R09DS0039EJ0300 NE5550234 NE5550234-AZ 74n7 R1766T
923A331G09-M Abstract: No abstract text available Text: Instrument transformers Types SAB and SAB-D Indoor current transformers Product features −− 6 00 volt indoor, 10 kV BIL −− 60 Hz contact factory for 50 Hz styles −− Primary amperes: 50-5000 −− Mechanical rating: 180 x rated current −− T hermal rating: 80 x rated current, one second	Original	PDF	E96461 1VAP428781-DB 923A331G09-M
A 673 C2 transistor Abstract: LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND Text: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging	Original	PDF	PTF141501E PTF141501E 150-watt, H-30260-2 A 673 C2 transistor LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND

LQW18AN4R7NG00 Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01 Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0	Original	PDF	NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
ATC200B103KT50X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X
TDK Ferrite Balun Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TDK Ferrite Balun FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6
MRFE6VP61 Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
mrfe6vp61k25h Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450
J0743 Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22
MRF5S4140H Abstract: No abstract text available Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H
Untitled Abstract: No abstract text available Text: 4 DRAWING THIS MADE IN THIRD DRAWI NG 0 A NG L E IS 3 PROJECTION UNPUBLISHED. COPYRIGHT REDEASED 19 BY AMP F OR 2 R U B E I C A T I ON INCORPORATED. ALL LOC ,19 INTERNATIONAL RIGHTS Ah RESERVED. DI 5T REV I 5 I0N5 50 P F Z ONE LTR DE5CRIPTION REV PER 0 G 3 A - 0 2 6 6 - 0 0	OCR Scan	PDF	27APR00 27-APR-00

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C20 5T Search Results

C20 5T Result Highlights (1)

C20 5T Price and Stock

Carling Technologies TC205-TR-B

Carling Technologies TC205-TW-W

Carling Technologies TC205-TB-B

Carling Technologies TC205-TW-B

McGill Microwave Systems Ltd TC-205T-NMH

C20 5T Datasheets Context Search

Panasonic R1766

GRM21BB31

ATC100A101JT

Panasonic R1766

ne5550

zener diode c24 5t

Untitled

zener diode c20 5t

74n7

R1766

Untitled

74n7

923A331G09-M

A 673 C2 transistor

LQW18AN4R7NG00

ATC200B103KT50X

TDK Ferrite Balun

Untitled

MRFE6VP61

mrfe6vp61k25h

C8450

J0743

MRF5S4140H

Untitled