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KEMET Corporation C1825C564J5RACTU Multilayer Ceramic Capacitor, 0.56 uF, 50 V, ? 5%, X7R, 1825 [4564 Metric] - Tape and Reel (Alt: C1825C564J5RACTU)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	C1825C564J5RACTU	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 $1.36382 10000 $1.36382	Buy Now
Mouser Electronics	C1825C564J5RACTU					1 - 10 - 100 - 1000 $1.36 10000 $1.36	Get Quote
Newark	C1825C564J5RACTU	Reel			1,000	1 $1.74 10 $1.74 100 $1.74 1000 $1.74 10000 $1.44	Buy Now

C1825C564J5RACTU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
C1825C564J5RACTU		KEMET	Ceramic Capacitors, Capacitors, CAP CER 0.56UF 50V 5% X7R 1825		Original	PDF

C1825C564J5RACTU Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all	Original	MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3	PDF
J307 Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all	Original	MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT	PDF
J280 Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with	Original	MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3 J280 MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with	Original	MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3	PDF